Abstract: A dendrite resistant battery may include a first electrode, a second electrode, and an electrolyte interposed between the first electrode and the second electrode. The dendrite resistant battery may further include at least one acoustic wave device configured to generate a plurality of acoustic waves during a charging of the battery. The charging of the battery may trigger cations from the first electrode to travel through the electrolyte and deposit on the second electrode. The plurality of acoustic waves may agitate the electrolyte to at least homogenize a distribution of cations in the electrolyte. The homogenization of the distribution of cations may prevent a formation of dendrites on the second electrode by at least increasing a uniformity of the deposit of cations on the second electrode. Related methods and systems for battery management are also provided.

Abstract: A metal-oxide-semiconductor (MOS) transistor includes a substrate. The substrate has a plurality of trenches extending along a first direction and located on a top portion of the substrate. A gate structure line is located on the substrate and extends along a second direction intersecting with the first direction and crossing over the trenches. A first doped line is located in the substrate, located at a first side of the gate structure line, and crosses over the trenches. A second doped line is located in the substrate, located at a second side of the gate structure line, and crosses over the trenches.

Abstract: A radio frequency integrated circuit includes a silicon CMOS substrate with at least one CMOS device buried therein, and at least one thin film transistor formed on the silicon CMOS substrate and functioning as a radio frequency device. The thin film transistor includes a T-shaped gate electrode. A method for the fabricating a radio frequency integrated circuit is also disclosed.

Abstract: A roller mouse includes a casing, a wheel module, a swingable assembly and an adjusting element. The wheel module includes a wheel element. The swingable assembly is fixed on the wheel module, and located near the wheel element. When the adjusting element is in a first position, the swingable assembly is contacted with the wheel element, so that the wheel module is in a first clicking mode. When the adjusting element is moved to a second position, the swingable assembly is pushed by the adjusting element, and the swingable assembly is separated from the wheel element, so that the wheel module is in a second clicking mode.

Abstract: A method of analyzing a semiconductor wafer includes obtaining a graphic data system (GDS) file corresponding to the semiconductor wafer, using GDS information from the GDS file to provide coordinates of a layout feature of the semiconductor wafer to an electron microscope, using the electron microscope to capture a raw image from the semiconductor wafer based on the coordinates of the layout feature, and performing a measurement operation on the raw image.

Abstract: A method for scene perception using video captioning based on a spatio-temporal graph model is described. The method includes decomposing the spatio-temporal graph model of a scene in input video into a spatial graph and a temporal graph. The method also includes modeling a two branch framework having an object branch and a scene branch according to the spatial graph and the temporal graph to learn object interactions between the object branch and the scene branch. The method further includes transferring the learned object interactions from the object branch to the scene branch as privileged information. The method also includes captioning the scene by aligning language logits from the object branch and the scene branch according to the learned object interactions.

Abstract: A mouse device includes a casing and a roller module. The roller module is installed within the casing. The roller module includes a roller wheel, a movable magnet, a first magnet and a second magnet. In response to a repulsive force between the first magnet and the movable magnet, the roller module is in a tactile feel mode. In response to an attractive force between the second magnet and the movable magnet, the roller module is in a smooth scrolling mode.

Abstract: A method includes capturing a raw image from a semiconductor wafer, using graphic data system (GDS) information corresponding to the wafer to assign a measurement box in the raw image, performing a distance measurement on a feature of the raw image in the measurement box, and performing a manufacturing activity based on the distance measurement.

Abstract: A method of forming a semiconductor structure includes providing a material layer having a recess formed therein. A first tungsten metal layer is formed at a first temperature and fills the recess. An anneal process at a second temperature is then performed, wherein the second temperature is higher than the first temperature.

Abstract: A system loading detecting device and method are provided. The system loading detecting device includes a processing device, a detection circuit and a controller. The detection circuit detects whether an adapter is unplugged from the system loading detecting device to generate a detection signal. When the adapter is unplugged from the system loading detecting device, the detection signal is changed from a first level to a second level. The controller is coupled to the detection circuit and the processing device. In addition, the controller receives the detection signal and determines whether to trigger the generation of a throttling signal according to the detection signal to enable a throttling mechanism to reduce system loading.

Abstract: A light source module including a substrate and a plurality of light emitting units is provided. The light emitting units are disposed on a surface of the substrate and each light emitting unit includes a first light emitting device, a second light emitting device, a first reflective element, a second reflective element and a package structure. The first reflective element and the second reflective element are respectively overlapped with the first light emitting device and the second light emitting device along a direction being perpendicular to the surface of the substrate. The package structure is disposed between the first reflective element, the second reflective element, the first light emitting device and the second light emitting device. The package structure includes a main body portion and a first recess. The main body portion covers the first light emitting device and the second light emitting device.

Abstract: A network communication method used in a network communication apparatus is provided that includes the steps outlined below. An external network communication apparatus is electrically coupled through a communication path. A communication capability packet is transmitted to the external network communication apparatus. Whether an acknowledgement packet from the external network communication apparatus is received through the communication path is determined. When the acknowledgement packet is not received, a single direction communication is performed within any single time period by using a time division communication mechanism such that an auto negotiation process is performed by exchanging the communication capability packet and the acknowledgement packet of both of the network communication apparatus and the external network communication apparatus.

Abstract: Apparatuses, systems, and techniques to identify a goal of a demonstration. In at least one embodiment, video data of a demonstration is analyzed to identify a goal. Object trajectories identified in the video data are analyzed with respect to a task predicate satisfied by a respective object trajectory, and with respect to motion predicate. Analysis of the trajectory with respect to the motion predicate is used to assess intentionality of a trajectory with respect to the goal.

Abstract: A mouse device includes a casing, a switch, a button, a travel distance adjustment and a knob structure. The button is exposed to a top side of the casing. A first end of the travel distance adjustment assembly is contacted with the button. A second end of the travel distance adjustment assembly includes an internal thread structure. The internal thread structure of the travel distance adjustment assembly is engaged with an external thread structure of the knob structure. While an operating part of the knob structure is rotated, the knob structure is not moved and the travel distance adjustment assembly is moved upwardly relative to the knob structure to push the force-exerted part upwardly. Consequently, a triggering speed of the switch is increased.

Abstract: The disclosure provides a light source module including a substrate, multiple light-emitting elements, multiple reflecting elements, and an encapsulation layer. The reflecting elements and light-emitting elements are disposed in stack arrangement in the direction perpendicular to the substrate surface, respectively. The encapsulation layer disposed between the reflecting elements and light-emitting elements includes multiple first grooves and main portions. The first grooves located between the light-emitting elements are connected to each other. The main portions cover the light-emitting elements, and the reflecting elements and the light-emitting elements are disposed in the central position of the main portions having multiple first inclined ridges disposed around the central position to define the first grooves in the first direction parallel to the extending direction of the substrate surface.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.

Abstract: A method includes capturing a raw image from a semiconductor wafer, using graphic data system (GDS) information corresponding to the wafer to assign a measurement box in the raw image, performing a distance measurement on a feature of the raw image in the measurement box, and performing a manufacturing activity based on the distance measurement.

Abstract: A keyboard device includes a keyboard module and a palm rest module. The palm rest module is arranged beside a lateral side of the keyboard module, and supports a wrist of a user. The palm rest module includes a pedestal, a casing and an adjusting element. The casing is disposed on the pedestal. The adjusting element is arranged between the pedestal and the casing. A position of the casing relative to the pedestal is adjustable through the adjusting element. In a first usage state, the casing is moved toward the keyboard module or moved away from the keyboard module through the adjusting element. In a second usage state, the casing is rotated about the adjusting element and relative to the keyboard module, so that an included angle is formed between the casing and the lateral side of the keyboard module.

Abstract: The present invention provides a storage node contact structure of a memory device comprising a substrate having a dielectric layer comprising a recess, a first tungsten metal layer, and an adhesive layer on the first tungsten metal layer and a second tungsten metal layer on the adhesive layer, wherein the second tungsten metal layer is formed by a physical vapor deposition (PVD).

Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.