Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.

Abstract: A manufacturing method of an electronic device is disclosed by the present disclosure. The manufacturing method includes providing a substrate, wherein the substrate includes a plurality of working areas, and each of the plurality of working areas includes a plurality of first recesses and a plurality of second recesses; disposing a plurality of first electronic units in the plurality of first recesses of the plurality of working areas through fluid transfer; identifying a defective working area from the plurality of working areas, wherein at least one of the plurality of first recesses of the defective working area has no electronic unit or a defective first electronic unit disposed therein; and disposing at least one repairing electronic unit in at least one of the plurality of second recesses of the defective working area through laser transfer.

Abstract: A memory array for computing-in-memory (CIM) is disclosed. The memory array for CIM includes a bit cell array, at least one word line and at least one bit line. The bit cell array has a plurality of bit cells, wherein each bit cell is operated at an operating voltage. The at least one word line is electrically connected to the bit cell array, wherein the at least one word line is associated with a first parameter. The at least one bit line is electrically connected to the bit cell array, wherein the bit cells extend along a specific direction, each the at least one bit line has an electrical parameter associated therewith, each the bit cell is associated with a second parameter, a first quantity of the plurality of bit cells of the bit cell array extends along the specific direction, and the memory array determines how an expansion associated with at least one of the first parameter and the second parameter is according to the specific direction.

Abstract: A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.

Abstract: The robotic arm operating system includes a control device, a plurality of joint devices and a brake release monitoring device. The control device is used to generate an operation instruction. The joint device is coupled to the control device. Each joint device includes a motor and a driver. The drivers of the joint devices receive the operation instruction to generate corresponding multiple unlocking signals. The unlocking signals are used to release a braking state of the motors of the corresponding joint devices. The brake release monitoring device is coupled to the control device and the joint devices, and includes a plurality of monitoring circuits. When one of the plurality of monitoring circuits does not receive the corresponding unlocking signal, the brake release monitoring device notifies the control device that the operation instruction is not allowed.

Abstract: A single wafer spin cleaning apparatus with soaking, cleaning, and etching functions in accordance with the present invention includes a spin driver device, a wafer spin chuck, and a wafer support disk. The wafer spin chuck is driven by the spin driver device to spin. The wafer support disk is annular and surrounds the wafer spin chuck, can act relative to the wafer spin chuck to a wafer support position or a wafer disengagement position, and includes a soaking trough. The wafer support disk at the wafer support position can support a wafer such that the wafer is soaked in processing liquid injected in the soaking trough for implementing a high efficient cleaning or etching process.

Abstract: A vehicle power management system and a power management method thereof are provided. The power management method includes: determining, by a microcontroller, whether or not a voltage of an ignition-off signal is less than a voltage threshold when the microcontroller receives the ignition-off signal; stopping a vehicle power supply from charging a backup battery, and using the vehicle power supply to charge a back-end load; activating a counter of the microcontroller; stopping the vehicle power supply from charging the back-end load, and using the backup battery to charge the back-end load when a counting time of the counter reaches a first time threshold; sending, by the microcontroller, the ignition-off signal to the back-end load when the counting time of the counter reaches a second time threshold; and stopping the backup battery from charging the back-end load when the counting time of the counter reaches a third time threshold.

Abstract: A chassis quick release device includes a housing including a base with a connected sliding channel and accommodating space therein and a cover assembled with the base, a locking block linearly movably set in the accommodating space, and an operating handle having a rod body positioned on the sliding channel and a grip assembled with the rod body. The rod body has a cylindrical joint that corresponds to the grip and has a shaft groove defined therein. The grip is provided with a sleeve corresponding to the cylindrical joint and defining therein an accommodating cavity. Moving the operating handle in the direction of the housing causes the locking block to slide out from the accommodating space to form a locked state. Pulling the operating handle away from the housing causes the locking block to move linearly in a second direction to form an unlocked state.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: Present invention is related to a tumor microenvironment on chip or a biochip for cell therapy having a carrier, a first cell or tissue culture area and a second cell or tissue area imbedded within the carrier. The present invention provides a biochip successfully cooperating micro fluidic technology and cell culture achieving the goal for detecting or testing the function of cell therapy for cancer or tumor.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: An electronic device and a manufacturing method thereof are provided. The manufacturing method of the electronic device includes the following. A substrate is provided. A plurality of electronic units are transferred to the substrate. The electronic units are inspected to obtain M first defect maps. The M first defect maps are integrated into N second defect maps, where N<M. M repairing groups are provided according to the N second defect maps. Each of the repairing groups includes at least one repairing electronic unit. The M repairing groups are transferred to the substrate. At least two of the repairing groups have the same location distribution of repairing electronic units, and the location distribution is consistent with a defect distribution of one of the second defect maps.

Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.

Abstract: An object detection method is suitable for a virtual reality system. The object detection method includes a plurality of first cameras of a head-mounted display (HMD) to capture a plurality of first frames. A plurality of second frames are captured through a plurality of second cameras in a tracker, wherein, the object detector searches for the object position in the first frames and the second frames.

Abstract: The present disclosure is generally related to 3D imaging capable OLED displays. A light field display comprises an array of 3D light field pixels, each of which comprises an array of corrugated OLED pixels, a metasurface layer disposed adjacent to the array of 3D light field pixels, and a plurality of median layers disposed between the metasurface layer and the corrugated OLED pixels. Each of the corrugated OLED pixels comprises primary or non-primary color subpixels, and produces a different view of an image through the median layers to the metasurface to form a 3D image. The corrugated OLED pixels combined with a cavity effect reduce a divergence of emitted light to enable effective beam direction manipulation by the metasurface. The metasurface having a higher refractive index and a smaller filling factor enables the deflection and direction of the emitted light from the corrugated OLED pixels to be well controlled.

Abstract: A wireless implant and associated system for motor function recovery after spinal cord injury, and more particularly a multi-channel wireless implant with small package size. The wireless implant can further be used in various medical applications, such as retinal prostheses, gastrointestinal implant, vagus nerve stimulation, and cortical neuromodulation. The system also includes a method and its implementation to acquire the impedance model of the electrode-tissue interface of the implant.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.