Abstract: An image defect identification method is applied to an image analysis device with an image receiver and an operation processor. The image defect identification method divides a detection image acquired by the image receiver into a plurality of pixel groups, transforms one of the plurality of pixel groups into a distribution curve, compares the distribution curve with a reference curve, and determines an area of the detection image conforming to a specific section of the distribution curve has defect when a difference between the specific section of the distribution curve and a related section of the reference curve is greater than a predefined threshold.

Abstract: An embodiment is an apparatus, such as a plasma chamber. The apparatus includes chamber walls and a chamber window defining an enclosed space. A chamber window is disposed between a plasma antenna and a substrate support. A gas delivery source is mechanically coupled to the chamber window. The gas delivery source comprises a gas injector having a passageway, a window at a first end of the passageway, and a nozzle at a second end of the passageway. The nozzle of the gas delivery source is disposed in the enclosed space. A fastening device is mechanically coupled to the gas delivery source. The fastening device is adjustable to adjust a sealing force against the gas injector.

Abstract: A semiconductor device includes a substrate, a source/drain region disposed in the substrate, a silicide structure disposed on the source/drain region, a first dielectric layer disposed over the substrate, a conductive contact disposed in the first dielectric layer and over the silicide structure, a second dielectric layer disposed over the first dielectric layer, a via contact disposed in the second dielectric layer and connected to the conductive contact, and a first metal surrounding the via contact.

Abstract: The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes depositing an etch stop layer on a cobalt contact disposed on a substrate, depositing a dielectric on the etch stop layer, etching the dielectric and the etch stop layer to form an opening that exposes a top surface of the cobalt contact, and etching the exposed top surface of the cobalt contact to form a recess in the cobalt contact extending laterally under the etch stop layer. The method further includes depositing a ruthenium metal to substantially fill the recess and the opening, and annealing the ruthenium metal to form an oxide layer between the ruthenium metal and the dielectric.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a source/drain (S/D) contact structure adjacent to the gate structure, a layer of dielectric material over the S/D contact structure and over the gate structure, a layer of organometallic material formed through the layer of dielectric material, and a trench conductor layer formed through the layer of dielectric material and in contact with the S/D contact structure and the gate structure. The layer of organometallic material can be between the layer of dielectric material and the trench conductor layer.

Abstract: The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes depositing an etch stop layer on a cobalt contact disposed on a substrate, depositing a dielectric on the etch stop layer, etching the dielectric and the etch stop layer to form an opening that exposes a top surface of the cobalt contact, and etching the exposed top surface of the cobalt contact to form a recess in the cobalt contact extending laterally under the etch stop layer. The method further includes depositing a ruthenium metal to substantially fill the recess and the opening, and annealing the ruthenium metal to form an oxide layer between the ruthenium metal and the dielectric.

Abstract: An extreme ultraviolet (EUV) source includes a module vessel and a scrubber system. The scrubber system may include a plurality of gutters in the module vessel. The plurality of gutters may include a first gutter and a second gutter. The second gutter may be lower than the first gutter in the module vessel. A unit volume of the second gutter is larger than a unit volume of the first gutter.

Abstract: A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure disposed on the substrate, a gate structure disposed on the fin structure, a source/drain (S/D) region disposed adjacent to the gate structure, a contact structure disposed on the S/D region, and a dipole layer disposed at an interface between the ternary compound layer and the S/D region. The contact structure includes a ternary compound layer disposed on the S/D region, a work function metal (WFM) silicide layer disposed on the ternary compound layer, and a contact plug disposed on the WFM silicide layer.

Abstract: An extreme ultraviolet (EUV) source includes a module vessel and a scrubber system. The scrubber system may include a plurality of gutters in the module vessel. The plurality of gutters may include a first gutter and a second gutter. The second gutter may be lower than the first gutter in the module vessel. A unit volume of the second gutter is larger than a unit volume of the first gutter.

Abstract: A wide-angle lens assembly includes a first lens including negative refractive power and a concave surface, a second lens including a meniscus lens with negative refractive power, a third lens, a fourth lens including positive refractive power and a convex surface, a fifth lens including a biconvex lens, a sixth lens including a biconvex lens, a seventh lens including positive refractive power and a convex surface, an eighth lens including a biconcave lens, a ninth lens including negative refractive power, and a stop disposed between the fourth lens and the sixth lens. The eighth lens is disposed between the fifth and seventh lenses and is cemented with at least one lens. The ninth lens is disposed between the fifth lens and an image side. The wide-angle lens assembly satisfies 1.3<A/IH<2.1 where A is a diameter of the stop and 1H is a maximum image height of the wide-angle lens assembly.

Abstract: The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a bottom metal line in a first interlayer dielectric layer, forming a second interlayer dielectric layer over the bottom metal line, exposing a top surface of the bottom metal line, increasing a total surface area of the exposed top surface of the bottom metal line, forming a conductive via over the bottom metal line, and forming a top metal line over the conductive via.

Abstract: The present disclosure provides a backlight module and a display device. The backlight module includes a light source structure and an optical film. The light source structure includes a substrate, plural light-emitting units and a package structure. The light-emitting units are disposed on the substrate. The package structure covers the light-emitting units, and the package structure has plural convex portions. The optical film is disposed on the light source structure, and the optical film is in contact with the convex portions of the package structure.

Abstract: A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure disposed on the substrate, a gate structure disposed on the fin structure, a source/drain (S/D) region disposed adjacent to the gate structure, a contact structure disposed on the S/D region, and a dipole layer disposed at an interface between the ternary compound layer and the S/D region. The contact structure includes a ternary compound layer disposed on the S/D region, a work function metal (WFM) silicide layer disposed on the ternary compound layer, and a contact plug disposed on the WFM silicide layer.

Abstract: A PCI-E expansion card module is configured to insert in a slot with a rotation switch. The PCI-E expansion card module includes a PCI-E expansion card body and an unlock mechanism. The PCI-E expansion card body includes an inserting portion and a positioning hook. The unlock mechanism is disposed beside the PCI-E expansion card body, and the unlock mechanism includes a pushing member. When the PCI-E expansion card body is inserted into the slot, the rotation switch is on a moving path of the pushing member. The pushing member moves and pushes the rotation switch to release a limitation of the PCI-E expansion card body.

Abstract: A non-pressure continuous blood pressure measuring device, comprises: a radar sensing module, an electro-cardiac sensing module and a microprocessor. The radar sensing module includes at least a transmitter and a receiver, the transmitter continuously provides a pulse wave signal to an artery, the receiver receives a reflected pulse wave signal. The electro-cardiac sensing module includes at least an electrode; the electro-cardiac sensing module receives an electro-cardiac signal through the electrode. The microprocessor is in signal transmittable connection with the radar sensing module and the electro-cardiac sensing module. The microprocessor controls the radar sensing module and the electro-cardiac sensing module, and simultaneously receives the reflected pulse wave signal and the electro-cardiac signal. The microprocessor determines a blood pressure parameter of the artery according to the reflected pulse wave signal and the electrocardiography signal.

Abstract: A floating fastener with shock-absorbing structure includes a base having a cylindrical portion and a bottom plate and an abutment ring and an inner ring formed in the cylindrical portion, a fixing element having a head, a shank and locking portion, a flexible liner having a top-sided positioning embedding portion placed in a first fixing hole of a preset first plate, a positioning tube having a tube body and a protruding ring portion, and a buffer pad having a ring groove positioned on the protruding ring portion of the positioning tube. The assembly structure of the positioning tube and the buffer pad is placed outside the cylindrical portion of the base from top to bottom through the perforation of the positioning tube to form a positioning, and the bottom side of the buffer pad is held against the upper surface of the preset first plate.

Abstract: A Wi-Fi power-adjusting method is provided. The Wi-Fi power-adjusting method is applied to a Wi-Fi power-adjusting device. The Wi-Fi power-adjusting method includes the step of determining whether the Wi-Fi power-adjusting device is in a vehicle. When the Wi-Fi power-adjusting device is in the vehicle, the method adjusts the Wi-Fi Tx power of the Wi-Fi power-adjusting device based on a set value corresponding to the vehicle. The set value corresponds to the first power coverage of the Wi-Fi Tx power.

Abstract: A vision inspection and correction method, which uses an image adjustment software/device to separate the eyes of the inspected person on an independent display screen, and the visual mark seen by the same vision is designed to be misaligned; through the guidance and interaction of the inspector and the inspected person, the inspector can adjust the image operation to zoom in or out, shift, focus, diverge, and rotate, etc., so that the inspected person's binocular images can be clearly distinguished and adjusted. Then, the binocular images are aligned, and the inspector will implant the correction parameters during the image adjustment process into 3D projectors, VR (virtual reality), AR (augmented reality device), MR hybrid reality device and other equipment to adjust the binocular digital image parameters, so users have, or can provide to a lens maker, personalized adjustment for comfortable images of both eyes.

Abstract: A control circuit including a timer circuit and a voltage monitor circuit is provided. The timer circuit enables a trigger signal every a fixed time interval in response to a wake-up event. The voltage monitor circuit is configured to determine whether the operation voltage reaches the expected voltage and includes a signal-generating circuit, a first delay circuit, a second delay circuit, and a determination circuit. The signal-generating circuit generates a reference signal according to the trigger signal. The first delay circuit receives the operation voltage and delays the reference signal to generate a first delay signal. The second delay circuit delays the trigger signal to generate a second delay signal. The determination circuit enables a wake-up signal according to the reference signal, the first delay signal, and the second delay signal in response to the wake-up event.

Abstract: The present disclosure provides a novel conjugate or a pharmaceutically acceptable salt thereof, wherein the conjugate has an active pharmaceutical moiety or a prodrug thereof, a targeting module and a linker therebetween. The conjugate or a pharmaceutically acceptable salt thereof is useful for treating a disease, recurrence or progression in a subject or increasing the likelihood of survival over a relevant period in a subject diagnosed with a disease.