Abstract: The present disclosure provides a pneumatic and vibration providing device for a vehicle seat, the pneumatic and vibration providing device including a first air bladder mounted in a seatback and configured to be inflated and deflated in the seatback, and a vibration motor disposed on a front portion of the first air bladder and configured to selectively generate vibration, wherein the vibration motor has a fusion sheet provided on one surface side thereof, wherein the fusion sheet has an edge portion entirely fixed to the first air bladder by thermal fusion.

Abstract: The present disclosure provides a semiconductor device and a method of forming the same. A method according one embodiment of the present disclosure include forming an epitaxial stack of channel layers and sacrificial layers on a semiconductor substrate, patterning the epitaxial stack to form a first fin-shape structure in a first region and a second fin-shape structure in a second region, etching the first fin-shape structure to form a first source/drain recess, etching the second fin-shape structure to form a second source/drain recess, forming first inner spacers in the first region, forming second inner spacers in the second region, laterally recessing the second inner spacers, forming a first source/drain feature in the first source/drain recess, and forming a second source/drain feature in the second source/drain recess. After the laterally recessing of the second inner spacers, the second inner spacers have a thickness less than the first inner spacers.

Abstract: Proposed is a console device related to a technology of a console cover opening and closing control structure capable of controlling a console cover in the console device configured such that the console cover is capable of being selectively opened in a front direction or a rear direction so that the console cover is not opened in the other direction when the console cover is opened in any one direction among the front direction and the rear direction.

Abstract: A nano-FET and a method of forming is provided. In some embodiments, a nano-FET includes an epitaxial source/drain region contacting ends of a first nanostructure and a second nanostructure. The epitaxial source/drain region may include a first semiconductor material layer of a first semiconductor material, such that the first semiconductor material layer includes a first segment contacting the first nanostructure and a second segment contacting the second nanostructure, wherein the first segment is separated from the second segment. A second semiconductor material layer is formed over the first segment and the second segment. The second semiconductor material layer may include a second semiconductor material having a higher concentration of dopants of a first conductivity type than the first semiconductor material layer. The second semiconductor material layer may have a lower concentration percentage of silicon than the first semiconductor material layer.

Abstract: Proposed is a console device having a technology of a console cover opening and closing control structure in which a console cover is operable of being selectively opened in one of a front side and a rear side while maintaining the other side, which is not opened, securely locked.

Abstract: A semiconductor device according to embodiment includes: a base insulation layer having a first surface and a second surface facing each other with a thickness therebetween; a channel layer on the first surface of the base insulation layer; a first source/drain pattern and a second source/drain pattern on the first surface of the base insulation layer and arranged in a first direction with the channel layer therebetween; a gate structure, that extends in a second direction crossing the first direction on the first surface of the base insulation layer, and surrounds the channel layer; a first silicide layer on a side wall of a recess pattern that penetrates the first source/drain pattern in a third direction that is perpendicular to the first direction and the second direction; and an interlayer insulation layer that is disposed in the recess pattern.

Abstract: A method of determining a vehicle situation using acoustic data and a low-frequency removal filter includes a step of acquiring, in an auditory sensor section mounted on a vehicle, acoustic data generated from the outside of the vehicle, a preprocessing step of removing, in a calculation section, low-frequency components from the acoustic data; and a step of calculating and determining, in the calculation section, an outside-of-vehicle situation event by using the preprocessed acoustic data.

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

Abstract: Embodiments of a vehicle interior component and methods of forming the same are disclosed. The vehicle interior component includes a frame with a support surface and having an opening formed in the support surface. A glass substrate is provided that includes a first major surface, a second major surface facing the support surface, and a minor surface between the first and second major surfaces and defining a thickness of the glass substrate. An adhesive at least partially fills the opening and adheres the glass substrate to the frame. The adhesive in the opening acts to secure the glass substrate and adhesive to the frame.

Abstract: An image sensor includes a color filter array, a first photoelectric conversion device configured to absorb first light passing through the color filter array and convert the absorbed first light into electrical signals, and a second photoelectric conversion device configured to absorb second light passing through both the color filter array and the first photoelectric conversion device and convert the absorbed second light into electrical signals. The first photoelectric conversion device includes a first photoelectric conversion layer configured to selectively absorb a mixed light of the first and second colors. The second photoelectric conversion device comprises a second photoelectric conversion layer configured to absorb light including a third color. Each of the first to third colors is one of three primary colors. The image sensor combines the electrical signals converted from the first and second photoelectric conversion devices to obtain electrical signals of the first to third colors.

Abstract: A composition for eco-friendly infrared transmissive glass and a method for optical glass using the same are disclosed. According to an embodiment of the present invention, there is provided a method for manufacturing optical glass transmitting an infrared wavelength band of light by a preset reference value or more, comprising mixing preset contents of Ge, Ga, and Se and charging the mixture into a preset container, performing fusion on the preset container in a first preset environment, and gradually cooling the container in a second preset environment.

Abstract: A semiconductor device is provided. The semiconductor device comprises: a substrate including an active region having an active cell region and a termination region surrounding the active region; a gate bus disposed in the active region to be non-overlapped with the active cell region; a gate electrode extending from the gate bus and disposed in the active cell region; a source region disposed on at least one side of the gate electrode in the active cell region; a gate insulating layer disposed between the gate bus and the substrate and between the gate electrode and the substrate; a gate metal disposed on the gate bus to be connected to the gate bus; and a source metal disposed on the gate electrode to be connected to the source region, wherein the gate bus and the gate electrode are disposed on the same layer.

Abstract: The present invention relates to a biodegradable coating composition, a method for preparing same, and a biodegradable article using same. Particularly, according to an embodiment of the present invention, a biodegradable coating composition is a copolymerized polyhydroxyalkanoate (PHA) resin comprising a PHA resin, a surfactant, inorganic particles and a rheology modifier, and including 4-hydroxybutyrate (4-HB) repeating units. By using a PHA resin having a weight average molecular weight of 10,000-1,200,000 g/mol, the biodegradable coating composition is environmentally friendly due to excellent biodegradability and biocompatibility, and can have improved dispersibility, coatability, oil resistance and processability.

Abstract: A non-volatile memory device may include a channel layer extending in a first direction, a plurality of gate electrodes and a plurality of insulating layers spaced apart from the channel layer and alternately arranged in the first direction, a charge trap layer between the channel layer and the plurality of gate electrodes, and a charge tunneling layer between the channel layer and the charge trap layer. The plurality of gate electrodes may include M, A, and X, where M may include a metal; A may include a Group 13 element, a Group 14 element, or V, or a combination thereof; X may include carbon or nitrogen, and M, A, and X may be arranged to have a layered crystal structure.

Abstract: A method for preparing a quantum dot and a quantum dot are provided. The method for preparing a quantum dot includes supplying a first mixture including a first precursor containing gallium oleate, a second precursor containing indium oleate, and a third precursor containing a sulfur atom, forming a second mixture by adding a first solvent to the first mixture, and forming a fourth mixture including a core containing a copper atom, an indium atom, a gallium atom, and a sulfur atom by adding a third mixture containing copper to the second mixture.

Abstract: An electrostatic discharge (ESD) protection apparatus and method for fabricating the same are disclosed herein. In some embodiments, the ESD protection apparatus, comprises: an internal circuit patterned in a device wafer and electrically coupled between a first node and a second node, an array of electrostatic discharge (ESD) circuits patterned in a carrier wafer, where the ESD circuits are electrically coupled between a first node and a second node and configured to protect the internal circuit from transient ESD events, and where the device wafer is bonded to the carrier wafer.

Abstract: Compositions which include hop materials infused with exogenous flavorant matrix and methods for infusing hop materials with a flavorant matrix are provided, wherein the method includes emulsifying a flavorant additive into a carrier system to provide a flavorant matrix; and infusing the hop material with the flavorant matrix.

Abstract: A solar cell module includes an upper substrate, a lower substrate opposite the upper substrate, a solar cell panel positioned between the upper substrate and the lower substrate, the solar cell panel including a plurality of solar cells which are arranged in a matrix form and are connected to one another through a wiring member, a passivation layer configured to package the solar cell panel, a frame configured to surround an outer perimeter of the solar cell panel, a connection terminal configured to connect two adjacent strings in the solar cell panel, and a cover member configured to cover the connection terminal.

Abstract: Described herein are compounds and methods for the treatment of coronavirus infection. The compounds can function as an inhibitor of the main protease (Mpro) of coronaviruses. The compounds can include diphenylmethyl piperazine derivatives, diphenylmethyl piperidine derivatives, diphenylmethylidene piperidine derivatives, tricyclo[9.4.0.03,8]pentadeca-1(11),3(8),4,6,12,14-hexaen derivatives, tricyclo[9.4.0.03,8]pentadeca-1(11),3(8),4,6,9,12,14-heptaen derivatives, 6,11-dihydrobenzo[c][1]benzoxepin derivatives, 6,11-dihydrobenzo[c][1]benzothiepin derivatives, 5,5-dioxo-6,11-dihydrobenzo[c][1]benzothiepin derivatives, and 6-oxo-5,11-dihydrobenzo[c][1]benzazepin derivatives, as well as pharmaceutically acceptable salts, hydrates, and prodrugs thereof.

Abstract: A semiconductor device, including a base and a semiconductor stack. The semiconductor stack includes a first semiconductor structure located on the base, a second semiconductor structure located on the first semiconductor structure, and an active structure located between the first semiconductor structure and the second semiconductor structure. The active structure includes two confinement layers and a well layer located between the two confinement layers. One of the confinement layers includes Alx1Ga1-x1As, and x1 is equal to or larger than 0.25 and equal to or smaller than 0.4. The well layer includes Inx2Ga1-x2As, and x2 is equal to or larger than 0.25 and equal to or smaller than 0.3. The one of the confinement layers and the well layer respectively have a first thickness in a range of 200 nm to 400 nm and a second thickness in a range of 3 nm to 6 nm.