Abstract: An oil circulation system is configured to supply lubrication oil to a plunger pump. The oil circulation system includes an oil tank, and the oil tank is provided with an electric heater. The oil circulation system further includes: a main circulation circuit. Two ends of the main circulation circuit are configured to respectively communicate with an oil outlet and an oil inlet of the oil tank, and the main circulation circuit is provided with a power member; and an overflow valve, disposed on the main circulation circuit and located on an oil outflow side of the power member.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a memory device. The method includes forming a first memory cell and a second memory cell over a substrate. A first dielectric layer is formed over and around the first and second memory cells. The first dielectric layer comprises sidewalls defining an opening spaced laterally between the first and second memory cells. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer is disposed in the opening. A planarization process is performed on the first and second dielectric layers. At least a portion of the second dielectric layer is in the opening after the planarization process.

Abstract: A three-dimensional measuring device includes a ball-shaped structure, an X-axis measuring module, a Y-axis measuring module and a Z-axis measuring module. The ball-shaped structure is moved and/or rotated in response to a movement of a movable object. The X-axis measuring module includes a first measuring structure and a first position sensor. The first measuring structure is movable along an X-axis direction and contacted with the ball-shaped structure. The Y-axis measuring module includes a second measuring structure and a second position sensor. The second measuring structure is movable along a Y-axis direction and contacted with the ball-shaped structure. The Z-axis measuring module includes a third measuring structure and a third position sensor. The third measuring structure is movable along a Z-axis direction and contacted with the ball-shaped structure.

Abstract: A memory device includes a plurality of one-time-programmable (OTP) memory cells formed as a memory array. Each of the plurality of OTP memory cells includes a transistor and a metal structure electrically coupled to each other in series, and the plurality of OTP memory cells are formed on a first side of a substrate. The memory device includes a heater structure, disposed on a second side of the substrate opposite to the first side, that includes a plurality of interconnect structures. The plurality of interconnect structures are configured to conduct a substantially high current so as to elevate a temperature of the resistor when any of the OTP memory cells is being programmed.

Abstract: A semiconductor package includes a first device, a second device and a solder region. The first device includes a first conductive pillar, wherein the first conductive pillar has a first sidewall, a second sidewall opposite to the first sidewall, a first surface and a second surface physically connected to the first surface, the first surface and the second surface are disposed between the first sidewall and the second sidewall, and an included angle is formed between the first surface and the second surface. The solder region is disposed between the first conductive pillar and the second device to bond the first device and the second device.

Abstract: An electronic device which has a narrow viewing angle state and a wide viewing angle state includes a diffuser layer, a panel and a light source. The panel is disposed on the diffuser layer. The light source provides a light passing through the panel. In the narrow viewing angle state, the light has a first relative light intensity and a second relative light intensity. The first relative light intensity is the strongest light intensity, and the second relative light intensity is 50% of the strongest light intensity. The first relative light intensity corresponds to an angle of 0°, the second relative light intensity corresponds to a half-value angle, and the half-value angle is between ?15° and 15°.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: A method of forming a storage cell includes: forming a transistor on a semiconductor substrate; forming a plurality of fuses in at least one conductive layer on the semiconductor substrate to couple a connecting terminal of the transistor; forming a bit line to couple the plurality of fuses; and forming a word line to couple a control terminal of the transistor.

Abstract: An integrated circuit includes a transistor formed in a semiconductor structure, a front-side horizontal conducting line in a first metal layer above the semiconductor structure, and a front-side vertical conducting line in a second metal layer above the first metal layer. The front-side horizontal conducting line is directly connected to a first terminal of the transistor, and the front-side vertical conducting line is directly connected to the front-side horizontal conducting line. In the integrated circuit, a front-side fuse element is conductively connected to the front-side vertical conducting line, and a backside conducting line is directly connected to a second terminal of the transistor. A word connection line extending in the first direction is directly connected to a gate terminal of the transistor.

Abstract: A metal fuse structure may be provided. The metal fuse structure may comprise a first fuse element and a second fuse element. The second fuse element may be adjacent to the first fuse element for a length L. The second fuse element may be spaced apart from first fuse element by a width W.

Abstract: A mobile device supporting wideband operations includes an antenna structure that includes a ground element, a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, and a fifth radiation element. The first radiation element has a feeding point. The second radiation element is coupled to a first grounding point on the ground element. The third radiation element is coupled to the feeding point. The first radiation element and the third radiation element are at least partially surrounded by the second radiation element. The fourth radiation element is coupled to a second grounding point on the ground element. The fourth radiation element includes a first elevated portion. The fifth radiation element is coupled to the feeding point. The fifth radiation element includes a second elevated portion.

Abstract: A composition for inhibiting diabetes mellitus comprising 1 part by weight of soybean oil, 5 to 14 parts by weight of emulsifier, 0.5 to 2 parts by weight of lecithin, 0.3 to 2 parts by weight of PEG, 81 to 91 parts by weight of deionized water and 2.345 to 17.833 parts by weight of cinnamaldehyde. Furthermore, the present invention also provides a method for manufacturing the composition for inhibiting diabetes mellitus, to produce the aforementioned composition for inhibiting diabetes mellitus.

Abstract: A detection device with a calibration function is configured to detect an object. The detection device includes an antenna element, a transmission line, a detection circuit, and a processor. The transmission line is coupled to the antenna element. The detection circuit is coupled to the transmission line. The detection circuit performs a detection process, so as to obtain an estimated distance between the antenna element and the object. The processor is coupled to the detection circuit. The processor calculates the calibrated distance by subtracting the error distance from the estimated distance.

Abstract: A fracturing apparatus may include a first plunger pump including a first power end and a first hydraulic end; a prime mover including a first power output shaft; and a first clutch including a first connection portion and a second connection portion. The first power end of the first plunger pump includes a first power input shaft, the first connection portion is coupled to the first power input shaft, the second connection portion is coupled to the first power output shaft of the prime mover.

Abstract: A composition for inhibiting Parkinson's disease is provided, comprising 1 part by weight of soybean oil, 5 to 14 parts by weight of an emulsifier, 0.5 to 2 parts by weight of lecithin, 81 to 91 parts by weight of deionized water, and 2.345 to 17.833 parts by weight of cinnamaldehyde. Furthermore, the present invention also provides a method for manufacturing the composition for inhibiting Parkinson's disease, to produce the aforementioned composition for inhibiting Parkinson's disease.

Abstract: A method includes providing a substrate having an n-type fin-like field-effect transistor (NFET) region and forming a fin structure in the NFET region. The fin structure includes a first layer having a first semiconductor material, and a second layer under the first layer and having a second semiconductor material different from the first semiconductor material. The method further includes forming a patterned hard mask to fully expose the fin structure in gate regions of the NFET region and partially expose the fin structure in at least one source/drain (S/D) region of the NFET region. The method further includes oxidizing the fin structure not covered by the patterned hard mask, wherein the second layer is oxidized at a faster rate than the first layer. The method further includes forming an S/D feature over the at least one S/D region of the NFET region.

Abstract: A production monitoring and analysis method based on an image data algorithm includes: obtaining a reconstructed gray histogram according to a gray image of an image where a product identification code is located; obtaining a segmentation threshold of an Otsu algorithm for segmenting the reconstructed gray histogram, obtaining the adjustment of the gray level in the sub-gray histogram according to the number of pixels corresponding to each gray level in the reconstructed gray histogram and the segmentation threshold, correcting the sub-gray histogram to obtain a corrected sub-gray histogram according to the adjustment of the gray level in the sub-gray histogram, the lateral segmentation threshold of the sub-gray histogram, and all the gray levels greater than the lateral segmentation threshold, and obtaining an enhanced gray image according to the corrected sub-gray histogram. The method avoids the loss of original information when using histogram equalization for image enhancement.

Abstract: Disclosed herein are related to a memory array including a set of memory cells and a set of switches to configure the set of memory cells. In one aspect, each switch is connected between a corresponding local line and a corresponding subset of memory cells. The local clines may be connected to a global line. Local lines may be metal rails, for example, local bit lines or local select lines. A global line may be a metal rail, for example, a global bit line or a global select line. A switch may be enabled or disabled to electrically couple a controller to a selected subset of memory cells through the global line. Accordingly, the set of memory cells can be configured through the global line rather than a number of metal rails to achieve area efficiency.

Abstract: An imaging lens includes a first lens, a second lens and a third lens arranged in order from an object side to an image side. The imaging lens satisfies the conditions of 0.07 mm<dBFL<0.17 mm and 1<DL/LT<1.79, where dBFL denotes a distance between a focal plane formed by light with a wavelength of 587 nm and a focal plane formed by light with a wavelength of 940 nm on an optical axis of the imaging lens when a subject to be captured is at infinity, DL is a lens diameter of the third lens, LT is a distance measured on the optical axis of the imaging lens between an object-side surface of the first lens and an image-side surface of the third lens.

Abstract: An error calibration apparatus and method are provided. The method is adapted for calibrating a machine learning (ML) accelerator. The ML accelerator achieves computation by using an analog circuit. An error between an output value of one or more computing layers of a neural network and a corresponding corrected value is determined. The computation of the computing layers is achieved by the analog circuit. A calibration node is generated according to the error. The calibration node is located at the next layer of the computing layers. The calibration node is used to minimize the error. The calibration node is achieved by a digital circuit. Accordingly, error and distortion of the analog circuit could be reduced.