Abstract: An alternating stack of insulating layers and spacer material layers can be formed over a substrate. The spacer material layers may be formed as, or may be subsequently replaced with, electrically conductive layers. A memory opening can be formed through the alternating stack, and annular lateral recesses are formed at levels of the insulating layers. Metal portions are formed in the annular lateral recesses, and a semiconductor material layer is deposited over the metal portions. Metal-semiconductor alloy portions are formed by performing an anneal process, and are subsequently removed by performing a selective etch process. Remaining portions of the semiconductor material layer include a vertical stack of semiconductor material portions, which may be optionally converted, partly or fully, into silicon nitride material portions. The semiconductor material portions and/or the silicon nitride material portions can be employed as discrete charge storage elements.

Abstract: A chemical-mechanical planarization (CMP) system includes a platen, a pad, a polish head, a rotating mechanism, a light source, and a detector. The pad is disposed on the platen. The polish head is configured to hold a wafer against the pad. The rotating mechanism is configured to rotate at least one of the platen and the polish head. The light source is configured to provide incident light to an end-point layer on the wafer. The detector is configured to detect absorption of the incident light by the end-point layer.

Abstract: An image adjusting method including the following steps is provided. Firstly, the original image is divided into a plurality of image areas by a plurality of mutually intersecting virtual lines, wherein the image areas include a plurality of edge areas, each being defined by at least one original image edge of the original image and at least two of the virtual lines. Then, the coordinate of at least one intersection of at least one of the virtual lines and the original image edge are changed to obtain a deformed image edge. Subsequently, at least one original pixel located in one of the edge regions in the original image is repositioned according to the at least two of the virtual lines and the deformed image edge.

Abstract: Embodiments of the present disclosure are directed towards methods of etherification including reducing templates of a zeolite catalyst to provide a reduced template zeolite catalyst having from 3 to 15 weight percent weight percent of templates maintained following calcination of zeolite catalyst; and contacting the reduced template zeolite catalyst with an olefin and an alcohol to produce a monoalkyl ether.

Abstract: Embodiments of the present disclosure are directed towards methods of etherification including modifying a zeolite catalyst with silica to provide a silica modified zeolite catalyst; and contacting the silica modified zeolite catalyst with an olefin and an alcohol to produce a monoalkyl ether.

Abstract: Articles having a thermal imprinted adhesive on a substrate of a plurality of certain conicals have improved bonding strength.

Abstract: A method including the step contacting an olefin, an alcohol, a metallosilicate catalyst and a solvent, wherein the solvent comprises structure (I): wherein R1 and R2 are each selected from the group consisting of an aryl group and an alkyl group with the proviso that at least one of R1 and R2 is an aryl group, further wherein n is 1-3.

Abstract: A semiconductor structure includes first metal lines located above at least one semiconductor device, and a continuous metal organic framework (MOF) material layer including lower MOF portions that are located between neighboring pairs of first metal lines and an upper MOF matrix portion that continuously extends over the first metal lines and connected to each of the lower MOF portions.

Abstract: According to a least one feature of the present disclosure, a method includes the steps: (a) providing a metallosilicate catalyst that has been used to catalyze a chemical reaction; and (b) heating the metallosilicate catalyst to a temperature from 200° C. to 425° C. for a period of 0.5 hours to 5 hours.

Abstract: A method includes the steps of (a) contacting a solvent having a Water Solubility of 1 g or greater per 100 g of water with a metallosilicate catalyst having an alumina to silica ratio from 5 to 1500; and (b) heating the metallosilicate catalyst to a temperature from 125 C to 300 C fora period of 0.5 hours to 5 hours.

Abstract: A linear motion system comprises a guiding member, a moving member, a plurality of rolling members and a preload adjusting module. The moving member is slidably disposed on the guiding member. The moving member and the guiding member together form a circulation path. When the guiding member moves with relative to the moving member, the moving member can generate a linear movement with relative to the guiding member. The rolling members are accommodated in the circulation path. The preload adjusting module is disposed on the moving member, and comprises a preload assembly and a preload regulator. The preload regulator applies a thrust to the preload assembly to adjust a preload value generated by the rolling members and applied to the moving member.

Abstract: A shell structure includes a shell and a shielding cover. The shell has an accommodating space, the accommodating space has an inner wall, and the inner wall has a first buckling portion. The shielding cover is arranged in the accommodating space, the shielding cover has an outer wall, the outer wall corresponds to the inner wall, and the outer wall has a second buckling portion corresponding to the first buckling portion. The first buckling portion and the second buckling portion are buckled with each other to limit relative degrees of freedom of the shell and the shielding cover.

Abstract: The invention unexpectedly found that an isolated and modified QPSC population has multi-potentiality, including: osteoblasts (bone cells), chondrocytes (cartilage cells), and adipocytes (fat cells). The QPSC population of the invention features a desirable immunomodulation ability, including inducing, enhancing, or suppressing an immune response and thus has potential value in the prevention and/or treatment of various immune diseases/disorders/conditions. The invention has effective homing ability and regulation ability in complement-dependent cytotoxicity, including the ability to block the activation of host complements and direct migration to the target area and the ability to enhance cell viability, and thus offers better cell protection and therapeutic efficacy in vivo in the prevention and/or treatment of various acute tissue injury, ischemic or degenerative diseases/disorders/conditions.

Abstract: A three-dimensional memory device includes a vertically alternating stack of insulating layers and electrically conductive layers located over a top surface of a substrate and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a respective memory film and a respective vertical semiconductor channel, and each of the insulating layers contains a metal-organic framework (MOF) material portion. The MOF material portion has a low dielectric constant, and reduces RC coupling between the electrically conductive layers. An optional airgap may be located within the MOF material portion to further reduce the effective dielectric constant. Optionally, discrete charge storage regions or floating gates may be formed only at the levels of the electrically conductive layers to reduce program disturb and noise in the device.

Abstract: An alternating stack of insulating layers and spacer material layers can be formed over a substrate. The spacer material layers may be formed as, or may be subsequently replaced with, electrically conductive layers. A memory opening can be formed through the alternating stack, and annular lateral recesses are formed at levels of the insulating layers. Metal portions are formed in the annular lateral recesses, and a semiconductor material layer is deposited over the metal portions. Metal-semiconductor alloy portions are formed by performing an anneal process, and are subsequently removed by performing a selective etch process. Remaining portions of the semiconductor material layer include a vertical stack of semiconductor material portions, which may be optionally converted, partly or fully, into silicon nitride material portions. The semiconductor material portions and/or the silicon nitride material portions can be employed as discrete charge storage elements.

Abstract: An alternating stack of first material layers and second material layers is formed over a substrate. A hard mask layer is formed over the alternating stack. Optionally, an additional hard mask layer can be formed over the hard mask layer. A photoresist layer is applied and patterned, and cavities are formed in the hard mask layer by performing a first anisotropic etch process that transfers a pattern of the openings in the photoresist layer through the hard mask layer. Via openings are formed through an upper portion of the alternating stack by performing a second anisotropic etch process. A cladding liner can be optionally formed on sidewalls of the cavities in the hard mask layer. The via openings can be vertically extend through all layers within the alternating stack by performing a third anisotropic etch process.

Abstract: A vibration sensor senses vibrations generated by an object to generate a noise signal. A processor obtains a structure vibration level spectrum from the noise signal, uses equalization parameters and A_weighting parameters to adjust the structure vibration level spectrum to generate a sound pressure level spectrum, and uses the sound pressure level spectrum to calculate a noise value of the object.

Abstract: A four-piece dual waveband optical lens system includes, in order from the object side to the image side: a stop; a first lens element with a positive refractive power having an object-side surface being convex near an optical axis, an image-side surface being convex near the optical axis; a second lens element with a negative refractive power having an object-side surface being concave near the optical axis, an image-side surface being convex near the optical axis; a third lens element with a positive refractive power having an object-side surface being concave near the optical axis, an image-side surface being convex near the optical axis; a fourth lens element with a negative refractive power having an object-side surface being convex near the optical axis, an image-side surface being concave near the optical axis, which has a short length and good performance without re-focusing in visible light and infrared dual waveband.

Abstract: A projector and a projection method that effectively protect a to-be-protected object existing in a sensing area are provided. The projector includes a first sensor, a second sensor, an optical engine and a processor. The optical engine includes a light source. The first sensor receives a first sensed signal, generates a first signal corresponding to the first sensed signal and transmits the first signal to the processor. The second sensor receives a second sensed signal different from the first sensed signal, generates a second signal corresponding to the second sensed signal and transmits the second signal to the processor. The processor determines whether the first signal and the second signal fall into their respective pre-determined ranges. The processor transmits a light adjusting signal to control a light source.

Abstract: A patch is provided. The patch comprises: a base layer; and an adhesive layer formed on a surface of the base layer, the adhesive layer has a wave pattern such that 95% or less of the area of the surface of the base layer is covered by the adhesive of the adhesive layer, wherein, the patch has an elongation of at least 120% in both machine direction and cross-machine direction.