Abstract: A CMOS silicide metal integration scheme that allows for the incorporation of silicide contacts (S/D and gates) and metal silicide gates using a self-aligned process (salicide) as well as one or more lithography steps is provided. The integration scheme of the present invention minimizes the complexity and cost associated in fabricating a CMOS structure containing silicide contacts and silicide gate metals.

Abstract: A p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) of an integrated circuit are provided. A first strain is applied to the channel region of the PFET but not the NFET via a lattice-mismatched semiconductor layer such as silicon germanium disposed in source and drain regions of only the PFET and not of the NFET. A process of making the PFET and NFET is provided. Trenches are etched in the areas to become the source and drain regions of the PFET and a lattice-mismatched silicon germanium layer is grown epitaxially therein to apply a strain to the channel region of the PFET adjacent thereto. A layer of silicon can be grown over the silicon germanium layer and a salicide formed from the layer of silicon to provide low-resistance source and drain regions.

Abstract: A method for manufacturing a device including an n-type device and a p-type device. In an aspect of the invention, the method involves doping a portion of a semiconductor substrate and forming a gap in the semiconductor substrate by removing at least a portion of the doped portion of the semiconductor substrate. The method further involves growing a strain layer in at least a portion of the gap in the semiconductor substrate. For the n-type device, the strain layer is grown on at least a portion which is substantially directly under a channel of the n-type device. For the p-type device, the strain layer is grown on at least a portion which is substantially directly under a source region or drain region of the p-type device and not substantially under a channel of the p-type device.

Abstract: A SRAM cell fabricated in SSOI (selective silicon on insulator) comprises cross coupled PFET pull-up devices P1, P2 and NFET pull-down devices N1, N2, with the P1, P2 devices being connected to the power supply and the N1, N2 devices being connected to the ground. A first passgate NL is coupled between a first bitline and the junction of the devices P1 and N1, with its gate coupled to a wordline, and a second passgate NR is coupled between a second bitline and the junction of devices P2 and N2, with its gate coupled to the wordline. Each of the pull-up devices P1, P2, the pull-down devices N1, N2, and the first and second passgates NL, NR are fabricated with selective SOI, with buried oxide being selectively provided under the drains of the pull-up devices P1 and P2, the drains of the pull-down devices N1 and N2, and the sources and drains of the passgate devices NL and NR.

Abstract: Silicide is introduced into the gate region of a CMOS device through different process options for both conventional and replacement gate types processes. Placement of silicide in the gate itself, introduction of the silicide directly in contact with the gate dielectric, introduction of the silicide as a fill on top of a metal gate all ready in place, and introduction the silicide as a capping layer on polysilicon or on the existing metal gate, are presented. Silicide is used as an option to connect between PFET and NFET devices of a CMOS structure. The processes protect the metal gate while allowing for the source and drain silicide to be of a different silicide than the gate silicide. A semiconducting substrate is provided having a gate with a source and a drain region. A gate dielectric layer is deposited on the substrate, along with a metal gate layer. The metal gate layer is then capped with a silicide formed on top of the gate, and conventional formation of the device then proceeds.

Abstract: A method for manufacturing an integrated circuit having a plurality of semiconductor devices including an n-type field effect transistor and a p-type field effect transistor on a semiconductor wafer by creating a spacer having a first width for the n-type field effect transistor and creating a spacer having a second width for the p-type field effect transistor, the first width being greater than the second width and depositing silicide material on the semiconductor wafer such that tensile mechanical stresses are formed within a channel of the n-type field effect transistor and compressive stresses are formed within a channel of the p-type field effect transistor.

Abstract: A method for manufacturing an integrated circuit having a plurality of semiconductor devices including an n-type field effect transistor and a p-type field effect transistor on a semiconductor wafer by creating a spacer having a first width for the n-type field effect transistor and creating a spacer having a second width for the p-type field effect transistor, the first width being greater than the second width and depositing silicide material on the semiconductor wafer such that tensile mechanical stresses are formed within a channel of the n-type field effect transistor and compressive stresses are formed within a channel of the p-type field effect transistor.

Abstract: A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.

Abstract: A p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) of an integrated circuit are provided. A first strain is applied to the channel region of the PFET but not the NFET via a lattice-mismatched semiconductor layer such as silicon germanium disposed in source and drain regions of only the PFET and not of the NFET. A process of making the PFET and NFET is provided. Trenches are etched in the areas to become the source and drain regions of the PFET and a lattice-mismatched silicon germanium layer is grown epitaxially therein to apply a strain to the channel region of the PFET adjacent thereto. A layer of silicon can be grown over the silicon germanium layer and a salicide formed from the layer of silicon to provide low-resistance source and drain regions.