Abstract: Various embodiments of the present disclosure are directed towards a memory cell. The memory cell includes a bottom electrode overlying a substrate. A data storage structure overlies the bottom electrode. A top electrode overlies the data storage structure. Sidewalls of the top electrode and sidewall of the bottom electrode are aligned. Further, a getter layer abuts the bottom electrode.

Abstract: The present invention relates to novel mutant thioesterase enzymes and naturally-occurring equivalents thereof, compositions made from such enzymes and uses of thioesterase enzymes. In particular, the present invention provides mutant thioesterase enzymes that have altered properties, for example, altered substrate specificity, altered activity, altered selectivity, and/or altered proportional yields in the product mixtures. The present invention also provides polynucleotides encoding such mutant thioesterase enzymes, and vectors and host cells comprising such polynucleotides. The invention further provides for novel uses of thioesterases in the production of various fatty acid derivatives, which are useful as, or as components of, industrial chemicals and fuels.

Abstract: In some embodiments, the present disclosure relates to method of forming an integrated chip. The method includes forming a bottom electrode structure over one or more interconnect layers disposed within one or more stacked inter-level dielectric (ILD) layers over a substrate. The bottom electrode structure has an upper surface having a noble metal. A diffusion barrier film is formed over the bottom electrode structure. A data storage film is formed onto the diffusion barrier film, and a top electrode structure is over the data storage film. The top electrode structure, the data storage film, the diffusion barrier film, and the bottom electrode structure are patterned to define a memory device.

Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

Abstract: A semiconductor device structure is provided. The structure includes a semiconductor substrate and a lower electrode over the semiconductor substrate. The structure also includes a resistance variable layer over the lower electrode and an ion diffusion barrier layer over the resistance variable layer. The structure further includes a capping layer over the ion diffusion barrier layer, and the capping layer is made of a metal material. In addition, the structure includes an upper electrode over the capping layer. The structure includes a protective element extending along a sidewall of the ion diffusion barrier layer and in direct contact with an interface between the resistance variable layer and the ion diffusion barrier layer.

Abstract: A hearing protection headset that can be worn by a user includes left and right earcups. The headset includes a radio communication system enabling at least one radio signal to be received and played through one or both of the earcups. Noise control circuitry in the headset is configurable by a user between at least three active modes of operation—the circuitry having a first active mode in which the headset provides automatic noise reduction, a second active mode in which the headset provides automatic noise cancellation, and a third active mode in which the headset provides both automatic noise reduction and automatic noise cancellation. A switch is manually operable by the user to configure the circuitry between the first active mode and the second active mode and the third active mode.

Abstract: Silyl pseudohalides having a general formula of R4?nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.

Abstract: Provided are a method of modeling a channel and transmitting molecules for passive transport molecular communication, the method being performed by a first device, that is, a transmission device, and including a molecular transmission step of transmitting molecules which are an information carrier through the channel, an H-diffusion function information reception step of receiving information about an H-diffusion function which is a function associated with a diffusion of the channel, and a molecular transmission property control step of controlling a transmission property that the molecules are transmitted based on the received information about the H-diffusion function, a method of modeling a molecular channel using an H-diffusion function in relation to the diffusion of the channel, and a transmission control method thereof.

Abstract: A method, a system, and a computer program product are provided. In various embodiments, an object is stored within a first data storage system resource indicating a dependency on a second data storage system resource, wherein the dependency requires collocation of the first data storage system resource and the second data storage system resource. An action applied to any one of the first data storage system resource and the second data storage system resource may be controlled based on the dependency.

Abstract: A method, a system, and a computer program product are provided. In various embodiments, an object is stored within a first data storage system resource indicating a dependency on a second data storage system resource, wherein the dependency requires collocation of the first data storage system resource and the second data storage system resource. An action applied to any one of the first data storage system resource and the second data storage system resource may be controlled based on the dependency.

Abstract: A computer-implemented method according to one embodiment includes receiving a request to add a generic volume entry to a generic volume element list, storing the generic volume entry in the generic volume element list in a SMS configuration in a SCDS, and building a volume list definition of the SMS configuration. A unit control block chain is parsed for determining additional specific volumes. It is determined whether a specific volume found in the parsing was not used in the building. In response to a determination that the specific volume found in the parsing was not used in the building, it is determined, for the specific volume found in the parsing, whether at least one predetermined condition is met. The specific volume found in the parsing is added to the volume list definition in response to a determination that the at least one predetermined condition is met.

Abstract: The techniques described herein enable a user that sends an email message that includes encrypted content to define a time period during which a recipient of the encrypted content has decrypted access rights. To effectively define the time period, the user can set a time at which the decrypted access rights for the recipient expire. The time occurs after a time at which the email message is sent to the recipient. Upon expiration of the time period, the decrypted access rights to the encrypted content is revoked for the recipient of the email message, thereby providing a proactive element of security for confidential and/or sensitive information. Further, the techniques enable a user to revoke decrypted access rights to the encrypted content for a recipients at any given time after the email message has already been sent, thereby adding a reactive element of security for confidential and/or sensitive information.

Abstract: An integrated circuit (IC) comprises a regulator circuit, a bootstrap control circuit, and a gate driver that drives a transistor pair in buck or boost mode to switch current through an inductor. The IC has a VIN terminal coupled to receive a voltage generated from an AC power source, a STR terminal coupled to receive a voltage from a stored power source (e.g., a capacitor bank), and a HSB terminal that is capacitively coupled to the inductor. When bucking or boosting, the regulator circuit generates VDD supply voltage from the stored power source, supplies the VDD supply voltage onto the bootstrap control circuit, and the bootstrap control circuit generates a gate driver supply voltage that is supplied to the gate driver circuit. When not bucking or boosting, voltage on the HSB terminal is maintained between a voltage threshold from the AC power source without draining the stored power source.

Abstract: Genetically modified microorganisms that have the ability to convert carbon substrates into chemical products such as isobutanol are disclosed. For example, genetically modified methanotrophs that are capable of generating isobutanol at high titers from a methane source are disclosed. Methods of making these genetically modified microorganisms and methods of using them are also disclosed.

Abstract: Numerous embodiments for reading or verifying a value stored in a selected memory cell in a vector-by-matrix multiplication (VMM) array in an artificial neural network are disclosed. In one embodiment, an input comprises a set of input bits that result in a series of input signals applied to a terminal of the selected memory cell, further resulting in a series of output signals that are digitized, shifted based on the bit location of the corresponding input bit in the set of input bits, and added to yield an output indicating a value stored in the selected memory cell.

Abstract: Methods and systems for protecting seller privacy during an ecommerce transaction are disclosed. In one aspect, a method includes, receiving, via an online listing configuration interface for a first session, one or more candidate pick up times and specific pick up locations for an item, determining a generalized version of the one or more specific pick up locations, displaying, via a second session, an online listing for the item, displaying, via the second session, the one or more candidate pick up times and the generalized versions of the one or more specific pick up locations, receiving, via the second session, a selection of one of the candidate pick up times and one of the generalized versions of one of the specific pick up locations, in response to receiving payment for the item, displaying a specific pick up location corresponding to the selected one generalized version.

Abstract: A method that includes receiving patient-generated event data over a network from a patient device associated with a patient having an active digital therapy prescription for treating an underlying disease or disorder. The patient-generated event data is encrypted by the patient device and includes at least one timestamped event related to the active digital therapy prescription. In response to receiving the patient-generated event data, the method includes decrypting, anonymizing, and storing the anonymized patient-generated event data on memory hardware. The method further includes receiving a patient record request over the network from a healthcare provider (HCP) system that requests the patient-generated event data and includes an authentication token. In response to receiving the patient record request, the method includes retrieving and encrypting the anonymized patient-generated event data from the memory hardware using the authentication token.

Abstract: An integrated circuit (IC) comprises a regulator circuit, a bootstrap control circuit, and a gate driver that drives a transistor pair in buck or boost mode to switch current through an inductor. The IC has a VIN terminal coupled to receive a voltage generated from an AC power source, a STR terminal coupled to receive a voltage from a stored power source (e.g., a capacitor bank), and a HSB terminal that is capacitively coupled to the inductor. When bucking or boosting, the regulator circuit generates VDD supply voltage from the stored power source, supplies the VDD supply voltage onto the bootstrap control circuit, and the bootstrap control circuit generates a gate driver supply voltage that is supplied to the gate driver circuit. When not bucking or boosting, voltage on the HSB terminal is maintained between a voltage threshold from the AC power source without draining the stored power source.

Abstract: An example introducer is disclosed. An example introducer includes an inner liner including a lumen, a proximal region, and at least one folded portion extending longitudinally along the proximal region. The introducer further includes an expandable support member. The support member includes a plurality of ribs extending along a length of the support member. The introducer further includes a sheath attached to at least a portion of the support member and the support member is designed to shift from a first position to an expanded position.

Abstract: The present disclosure relates to a method of forming a resistive random access memory (RRAM) device. In some embodiments, the method may be performed by forming a first electrode structure over a substrate. A doped data storage element is formed over the first electrode structure. The doped data storage element is formed by forming a first data storage layer over the first electrode structure and forming a second data storage layer over the first data storage layer. The first data storage layer is formed to have a first doping concentration of a dopant and the second data storage layer is formed to have a second doping concentration of the dopant that is less than the first doping concentration. A second electrode structure is formed over the doped data storage element.