Abstract: The invention includes method of determining if a subject is at risk for developing schizophrenia (SZ), schizotypal personality disorder (SPD), or schizoaffective disorder (SD).

Abstract: A method of CaO-doped SrCu2O2 spin-on precursor synthesis and low temperature p-type thin film deposition, includes preparing a wafer to receive a spin-coating thereon; selecting metalorganic compounds to form a SrCu2O2 precursor, mixing and refluxing the metalorganic compounds to form a precursor mixture; filtering the precursor mixture to produce a spin-coating precursor; applying the spin-coating precursor to the wafer in a two-step spin coating procedure; baking the spin-coated wafer using a hot-plate bake to evaporate substantially all of the solvents; and annealing the spin-coated wafer to form a CaO-doped SrCu2O2 layer thereon.

Abstract: A separation matrix for capillary electrophoresis of single-stranded nucleic acids is disclosed. The matrix comprises an aqueous buffer containing a denaturant and (hydroxypropyl)methyl cellulose.

Abstract: Generating data, such as metadata, relating to video media, such as a movie, and formatted according to a global video format. When metadata that is associated with video media and is formatted according to a formatting scheme associated with a particular content provider is received, the formatting scheme of the received metadata is validated if the formatting scheme of the received metadata corresponds to the global video format. Such video media may include streaming video, Video-On-Demand (VOD) movies, Pay-per-view movies, 0downloadable movies, and video files adapted for rendering by a media player program executed on a computer.

Abstract: PrCaMnO (PCMO) thin films with predetermined memory-resistance characteristics and associated formation processes have been provided. In one aspect the method comprises: forming a Pr3+1?xCa2+xMnO thin film composition, where 0.1<x<0.6; in response to the selection of x, varying the ratio of Mn and O ions as follows: O2?(3±20%); Mn3+((1?x)±20%); and, Mn4+(x±20%). When the PCMO thin film has a Pr3+0.70Ca2+0.30Mn3+0.78Mn4+0.22O2?2.96 composition, the ratio of Mn and O ions varies as follows: O2?(2.96); Mn3+((1?x)+8%); and, Mn4+(x?8%). In another aspect, the method creates a density in the PCMO film, responsive to the crystallographic orientation. For example, if the PCMO film has a (110) orientation, a density is created in the range of 5 to 6.76 Mn atoms per 100 ?2 in a plane perpendicular to the (110) orientation.

Abstract: A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa2Cu3O7-X (YBCO), indium oxide (In2O3), or ruthenium oxide (RuO2), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr1-XCaXMnO3 (PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.

Abstract: A memory array dual-trench isolation structure and a method for forming the same have been provided.

Abstract: Resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises an active layer of perovskite material interposed between upper electrodes and lower electrodes. A bit region located within the active layer at the cross point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one, or more, voltage pulses. Voltage pulses may be used to increase the resistivity of the bit region, decrease the resistivity of the bit region, or determine the resistivity of the bit region. Memory circuits are provided to aid in the programming and read out of the bit region.

Abstract: Matching metadata for sporting events with television program listing data. A global sports format enables the import of sports metadata from various providers. The metadata is interlinked with the television program listing data via configurable match rules or criteria. An enhanced electronic programming guide is created to display, to a user, the interlinked metadata.

Abstract: A method of fabricating a doped-PCMO thin film layer includes preparing a PCMO precursor solution having a transition metal additive therein; and spin-coating the doped-PCMO spin-coating solution onto a wafer.

Abstract: Described are simplified and efficient methods for preparing recombinant adenovirus using liposome-mediated cotransfection and the direct observation of a cytopathic effect (CPE) in the transfected cells. Also disclosed are compositions and methods involving novel p53 adenovirus constructs, including methods for restoring p53 function and tumor suppression in cells and animals having abnormal p53.

Abstract: A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa2Cu3O7-X (YBCO), indium oxide (In2O3), or ruthenium oxide (RuO2), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr1-XCaXMnO3 (PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.

Abstract: A method of fabricating a doped-PCMO thin film layer includes preparing a PCMO precursor solution having a transition metal additive therein; and spin-coating the doped-PCMO spin-coating solution onto a wafer.

Abstract: The present invention discloses a method to achieve grading PCMO thin film for use in RRAM memory devices since the contents of Ca, Mn and Pr in a PCMO film can have great influence on its switching property. By choosing precursors for Pr, Ca and Mn having different deposition rate behaviors with respect to deposition temperature or vaporizer temperature, PCMO thin film of grading Pr, Ca or Mn distribution can be achieved by varying that process condition during deposition. The present invention can also be broadly applied to the fabrication of any multicomponent grading thin film process by varying any of the deposition parameters after preparing multiple precursors to have different deposition rate behaviors with respect to that particular process parameter. The present invention starts with a proper selection of precursors in which the selected precursors have different deposition rates with respect to at least one deposition condition such as deposition temperature or vaporizer temperature.

Abstract: A method for forming a doped PGO ferroelectric thin film, and related doped PGO thin film structures are described. The method comprising: forming either an electrically conductive or electrically insulating substrate; forming a doped PGO film overlying the substrate; annealing; crystallizing; and, forming a single-phase c-axis doped PGO thin film overlying the substrate, having a Curie temperature of greater than 200 degrees C. Forming a doped PGO film overlying the substrate includes depositing a doped precursor in the range between 0.1N and 0.5N, with a molecular formula of Pby-xMxGe3O11, where: M is a doping element; y=4.5 to 6; and, x=0.1 to 1. The element M can be Sn, Ba, Sr, Cd, Ca, Pr, Ho, La, Sb, Zr, or Sm.

Abstract: A method of forming a microlens structure using a patternable lens material is provided. An organic-inorganic hybrid polymer comprising titanium dioxide is exposed to light using a defocused mask image and then developed to produce a lens-shaped region.

Abstract: A catalyst for the preparation of dimethyl carbonate from urea and methanol having a composition on weight base of: active component of from 20 to 50 wt %, and carrier of from 80 to 50 wt %, and prepared by equal-volume spraying and impregnating method is disclosed. The method for the synthesis of dimethyl carbonate can be carried out in a catalytic rectification reactor, said method comprising: (1) dissolving urea in methanol to form a methanol solution of urea; and (2) feeding the methanol solution of urea and methanol counter-currently into the reaction zone, wherein the reaction is carried out at conditions including reaction temperature of from 120° C. to 250° C., reaction pressure of from 0.1 MPa to 5 MPa, kettle bottom temperature of from 70° C. to 210° C., stripping section temperature of from 70° C. to 250° C., rectifying section temperature of from 70° C. to 280° C., and reflux ratio of from 1:1 to 20:1.

Abstract: A method of forming an electrode and a ferroelectric thin film thereon, includes preparing a substrate; depositing an electrode on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites; and forming a single-phase, c-axis PGO ferroelectric thin film thereon, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness. An integrated circuit includes a substrate; an electrode deposited on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites, wherein the iridium composites are taken from the group of composites consisting of IrO2, Ir—Ta—O, Ir—Ti—O, Ir—Nb—O, Ir—Al—O, Ir—Hf—O, Ir—V—O, Ir—Zr—O and Ir—O; and a single-phase, c-axis PGO ferroelectric thin film formed on the electrode, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness.

Abstract: A multi-layer PrxCa1-xMnO3 (PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom electrode; depositing a nanocrystalline PCMO layer; depositing a polycrystalline PCMO layer; forming a multi-layer PCMO film with bipolar switching properties; and, forming top electrode overlying the PCMO film. If the polycrystalline layers are deposited overlying the nanocrystalline layers, a high resistance can be written with narrow pulse width, negative voltage pulses. The PCMO film can be reset to a low resistance using a narrow pulse width, positive amplitude pulse. Likewise, if the nanocrystalline layers are deposited overlying the polycrystalline layers, a high resistance can be written with narrow pulse width, positive voltage pulses, and reset to a low resistance using a narrow pulse width, negative amplitude pulse.

Abstract: A sense amplifier has a charge sharing compensator to eliminate wake-up delays in an output signal. The charge sharing compensator comprises a capacitor or a charge storing means to compensate for charges in a charge sharing path that has two different voltage potentials. The compensator also has a transistor for selecting a signal path to transfer charges from the capacitor, eliminating charge sharing in the bit line path of the sense amplifier. Another aspect of the present invention is a method for resolving charge sharing problems that comprises steps of choosing a proper value for a compensating capacitor, choosing a control signal for a charge sharing compensation means, and clamping down an input terminal of the sense amplifier.