Abstract: Methods, systems, and devices for selective access for grouped memory dies are described. A memory device may be configured with a select die access protocol for a group of memory dies that share a same channel. The protocol may be enabled by one or more commands from the host device, which may be communicated to each of the memory dies of the group via the channel. The command(s) may indicate a first set of one or more memory dies of the group for which a set of commands may be enabled and may also indicate a second set of one or more memory dies of the group for which at least a subset of the set of commands is disabled. When the select die access mode is enabled, the disabled memory dies may be restricted from performing the subset of commands received via the channel.

Abstract: The invention provides systems and methods for an autonomous vehicle (AV) control system comprising an onboard unit (OBU) and a roadside unit (RSU), which are two components of an Intelligent Road Infrastructure System (IRIS). This integrated vehicle-road system provides sensing, prediction, decision-making, and control instructions for specific vehicles at a microscopic level. Specifically, through the AV control system, an AV can be effectively and efficiently controlled by the AV itself and/or by the RSU. The AV control system provides individual vehicles with detailed time-sensitive control instructions for vehicles to fulfill driving tasks. In addition, the RSU conducts behavior prediction for individual vehicles at a microscopic level from 1 to 10 milliseconds, which is critical for connected and automated vehicle (CAV) operations.

Abstract: The present disclosure provides a method and device for wireless communication in a user equipment and a base station. The user equipment receives a first information, and transmits a first wireless signal in a first time domain resource of a first sub-band. The first information is used to indicate a first parameter; the first parameter is associated with one of L spatial parameter sets; the L spatial parameter sets are respectively in one-to-one corresponding to L time domain resources; the first time domain resource is one of the L time domain resources. The L time domain resources belong to a first time window; the first information is used to determine the first time domain resource from the L time domain resources; the first parameter is used to determine a transmitting antenna port group of the first wireless signal.

Abstract: A fin field effect transistor (Fin FET) device includes a fin structure extending in a first direction and protruding from an isolation insulating layer disposed over a substrate. The fin structure includes a well layer, an oxide layer disposed over the well layer and a channel layer disposed over the oxide layer. The Fin FET device includes a gate structure covering a portion of the fin structure and extending in a second direction perpendicular to the first direction. The Fin FET device includes a source and a drain. Each of the source and drain includes a stressor layer disposed in recessed portions formed in the fin structure. The stressor layer extends above the recessed portions and applies a stress to a channel layer of the fin structure under the gate structure. The Fin FET device includes a dielectric layer formed in contact with the oxide layer and the stressor layer in the recessed portions.

Abstract: A collision warning method in relation to vulnerable road users (VRUs), applied in a host vehicle when being driven, obtains a relative lateral distance between a vehicle and a VRU and obtains speed of movement of the VRU in addition to speed and direction of the host vehicle. A warning scenario is determined according to the relative lateral distance and the VRU speed. A warning distance according to the warning scenario and the relative speed is calculated, a relative distance between the host vehicle and the VRU is obtained, and the issue of a corresponding level of a collision warning is determined according to a comparison between the warning distance and the relative distance.

Abstract: A semiconductor device includes; a semiconductor substrate including a first region and a second region, a first interlayer insulating layer on the second region, a capping layer disposed on the first interlayer insulating layer, an upper surface of the capping layer includes a first trench, conductive patterns spaced apart on the capping layer, side surfaces of the conductive patterns are aligned with inner side surfaces of the first trench, and a peripheral separation pattern disposed in the first trench to cover the side surfaces of the conductive patterns. The peripheral separation pattern has a first thickness on the side surfaces of the conductive patterns and a second thickness greater than or equal to the first thickness on a lower surface.

Abstract: A magnetic device includes a magnetic core assembly, a first secondary winding, a second secondary winding and a primary winding. The magnetic core assembly includes a first magnetic leg, a second magnetic leg and a third magnetic leg. The first to third magnetic legs are arranged in sequence. The second magnetic leg is disposed between the first magnetic leg and the third magnetic leg. The first secondary winding is disposed between the first magnetic leg and the second magnetic leg, and the second secondary winding is disposed between the second magnetic leg and the third magnetic leg. A first terminal of the primary winding is disposed between the first magnetic leg and the second magnetic leg, and a second terminal of the primary winding is disposed between the second magnetic leg and the third magnetic leg.

Abstract: A semiconductor structure includes a source/drain (S/D) feature disposed adjacent to a metal gate structure (MG), an S/D contact disposed over the S/D feature, and a dielectric layer disposed over the S/D contact, where the S/D feature and the S/D contact are separated from the MG by a first air gap, where the dielectric layer partially fills the first air gap, and where a bottom portion of a bottom surface of the S/D contact is separated from a top portion of the S/D feature by a second air gap that is connected to the first air gap.

Abstract: Disclosed herein is a method for managing vehicle driving by using V2X communication. More particularly, a reporting vehicle generates a driving message for reporting maneuver information of the reporting vehicle. The driving message includes the maneuver information associated with intended expected driving after a current time of the vehicle. The reporting vehicle receives a management message, as a response to the driving message, including vehicle driving management information for managing a driving operation of the reporting vehicle based on the maneuver information.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The method includes forming a bottom electrode layer over a substrate and forming a pinned layer over the bottom electrode layer. The method also includes forming a tunnel barrier layer over the pinned layer and forming a free layer over the tunnel barrier layer. The method also includes patterning the free layer, the tunnel barrier layer, and the pinned layer to form a magnetic tunnel junction (MTJ) stack structure and patterning the bottom electrode layer to form a bottom electrode structure under the MTJ stack structure. In addition, patterning the free layer includes using a first etching gas, and patterning the bottom electrode layer includes using a second etching gas, which is different from the first etching gas.

Abstract: A solar cell, a method for producing a solar cell and a solar cell module are provided. The solar cell includes: a substrate having a front surface and a rear surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride SimNn material, and a ratio of n/m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiOiNj material, and a ratio of j/i is 0.1˜0.6; and a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have a doping element of a same conductivity type.

Abstract: There is provided mechanisms for handling an impaired antenna branch at a radio transceiver device. The radio transceiver device includes a plurality of antenna branches. Channel information is correlated among the respective antenna branches according to a correlation relation. A method is performed by a network node. The method includes obtaining an indication that at least one of the antenna branches at the radio transceiver device is impaired. The method includes, in response thereto obtaining channel information for each of the non-impaired antenna branches at the radio transceiver device. The method includes estimating channel information for each of the at least one impaired antenna branch using the obtained channel information and the correlation relation.

Abstract: A battery system includes a battery pack having a metal housing capable of accommodating a plurality of battery modules, a plurality of slave battery management systems configured to manage the plurality of battery modules, and a master battery management system installed outside the metal housing to wirelessly communicate with a first battery management system among the plurality of slave battery management systems, wherein the first slave battery management system which communicates with the master battery management system is installed at a boundary of the metal housing so as not to be shielded with the metal housing.

Abstract: A method for establishing an aggregated connection is provided. The method is executed by a terminal. The method includes: before a terminal performs cell handover, the terminal receives a conditional handover (CHO) command sent by a source base station, where the CHO command including respective aggregation configuration information of at least one candidate cell; in response to determining that the terminal is handed over to a target cell, the terminal directly acquires target aggregation configuration from aggregation configuration information of the target cell; and the terminal establishes an aggregated connection on the basis of the target aggregation configuration.

Abstract: A half-bridge flyback power converter: a first transistor, a second transistor and a third transistor which form a half-bridge circuit. The first transistor is turned on for generating a negative circulated current for achieving zero voltage switching of the second transistor. The second transistor is turned on for magnetizing a transformer. The third transistor is turned on during a demagnetized time period to generate an output voltage. The physical size of the first transistor is smaller than physical size of the third transistor.

Abstract: Methods, systems, and devices for wireless communication are described. A wireless communications system may establish radio bearers for certain data transmissions between a user equipment (UE) and a base station. A radio bearer may be associated with one or more quality of services (QoS) parameters, such as a bit rate. The base station may indicate to the UE a time window over which to average the bit rate. In some examples, a radio bearer may include multiple data flows. The base station may provide information regarding QoS parameters for each data flow in control signaling, such as a grant.

Abstract: The present disclosure relates to a negative electrode material and methods of preparation and use relating thereto. The electrode material comprises a plurality of electroactive material particles, where each electroactive material particle includes an electroactive material core and an electronically conductive coating. The method includes contacting an electroactive material precursor including a plurality of electroactive material particles with a solution so as to form an electronically conductive coating on each of the electroactive material particles. The solution includes a solvent and one or more of copper fluoride (CuF2), titanium tetrafluoride (TiF3 or TiF4), iron fluoride (FeF3), nickel fluoride (NiF2), manganese fluoride (MnF2, MnF3, or MnF4), and vanadium fluoride (VF3, VF4, VF5). The electronically conductive coating includes a plurality of first regions and a plurality of second regions. The plurality of first regions include lithium fluoride.

Abstract: An example operation includes one or more of determining a movement of an occupant in a vehicle, determining an atypical health condition based on the movement and a position of the occupant in the vehicle, determining if the occupant is breathing, based on an analysis performed by the vehicle, verifying the atypical health condition by the vehicle, based on received data from a device proximate the occupant, and sending a notification to an entity, based on the verification.

Abstract: Disclosed herein is a method for indirect communication in a core network of a wireless communication system using a Service Communication Proxy, SCP, with Transport Layer Security, TLS, the method comprising: at a Network Function, NF, service consumer: sending, to the SCP, a Hypertext Transfer Protocol, HTTP, message that is intended for a first NF service producer instance, the HTTP message using a Fully Qualified Domain Name, FQDN, of the SCP and having a path that includes a query parameter set to a first value; and at the SCP: receiving the HTTP message from the NF service consumer; obtaining a HTTP response for the HTTP message; and sending the HTTP response to the NR service consumer; and at the NF service consumer: receiving the HTTP response from the SCP.

Abstract: A semiconductor device including nanosheet field-effect transistors (NSFETs) in a first region and fin field-effect transistors (FinFETs) in a second region and methods of forming the same are disclosed. In an embodiment, a device includes a first memory cell, the first memory cell including a first transistor including a first channel region, the first channel region including a first plurality of semiconductor nanostructures; and a second transistor including a second channel region, the second channel region including a semiconductor fin.