Abstract: A lighting device includes a light board and a light dimmer circuit. The light board includes multiple first light emitting elements and second light emitting elements. The first light emitting elements are disposed in a first area of the light board. The second light emitting elements are disposed in a second area of the light board. The light dimmer circuit is configured to drive the second light emitting elements to generate flickering lights from the second area of the light board, and is configured to drive the first light emitting elements to generate non-flickering lights from the first area of the light board.

Abstract: An antenna structure with wide radiation bandwidth in a reduced physical space includes a metallic housing, a first feed portion, and a second feed portion. The metallic housing includes a metallic side frame and a metallic back board. The metallic side frame defines a slot, and first and second gaps. The metallic side frame between the first gap and one end of the slot forms a first radiation portion. The second gap divides the first radiation portion into first and second radiation sections. The first feed portion feeds current and signal to the first radiation section, and the first radiation section works in a GPS mode and a WIFI 2.4 GHz mode. The second feed portion feeds current and signal to the second radiation section, and the second radiation section works in a WIFI 5 GHz mode.

Abstract: Methods and apparatus of video coding using sub-block based affine mode are disclosed. According to this method, control-point motion vectors (MVs) associated with the affine mode are determined for a block. A sub-block MV is derived for a target sub-block of the block from the control-point MVs for the block. A prediction offset is determined for a target pixel of the target sub-block using information comprising a pixel MV offset from the sub-block MV for the target pixel according to Prediction Refinement with Optical Flow (PROF). The target pixel of the target sub-block is encoded or decoded using a modified predictor. The modified prediction is generated by clipping the prediction offset to a target range and combining the clipped prediction offset with an original predictor.

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: A read voltage level correction method, a memory storage device, and a memory control circuit unit are provided. The method includes: using a first read voltage level as an initial read voltage level to perform a first data read operation on a first physical unit among multiple physical units to obtain a second read voltage level used to successfully read the first physical unit; recording association information between the first read voltage level and the second read voltage level in a transient look-up table; and performing a second data read operation according to a read level tracking table and the association information recorded in the transient look-up table.

Abstract: A three-dimensional ultrasonic imaging method includes transmitting an ultrasonic wave to a fetal head; receiving an ultrasonic echo, obtaining an ultrasonic echo signal, and obtaining the three-dimensional volume data of the fetal head according to the ultrasonic echo signal; according to the characteristics of a median sagittal section of the fetal head, detecting the median sagittal section in the three-dimensional volume data; and displaying the median sagittal section.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: An annular airflow regulating apparatus includes a cup-shaped element and an adjustment element. The cup-shaped element has a bowl and a bottom, integrated to form a first chamber. The bottom has a tapered channel parallel to an axis and penetrating through the bottom. A ring-shaped groove is disposed between the tapered channel and the bottom. The ring-shaped groove has an annular plane perpendicular to the axis. The adjustment element, having a tapered portion and second holes, is movably disposed in the cup-shaped element. The tapered portion protrudes into the tapered channel A tapered annular gap is formed between the tapered portion and the tapered channel. When the adjustment element is moved with respect to the cup-shaped element, a width of the tapered annular gap is varied, and thereupon a flow rate and velocity of the process gas would be varied accordingly.

Abstract: The disclosure relates to tuning configuration parameters for graphics pipeline for better user experience. A device for graphics processing, comprising: hardware engines; a graphics pipeline at least partly implemented by the hardware engines; and a tuner, coupled to the hardware engines and the graphics pipeline, the tuner to: collect statuses of the device during runtime for a previous frame; determine configuration parameters based on the collected statuses, the configuration parameters associated with three-dimensional 3D rendering, pre-processing and video encoding of the graphics pipeline; and tune the graphics pipeline with the determined configuration parameters for processing a next frame.

Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.

Abstract: The present disclosure discloses a kart and a frame thereof. The frame includes: a first frame including an outer sleeve and a first fixing piece arranged on the outer sleeve; a second frame including an inner sleeve defined with at least the two first perforations in an axial direction of the inner sleeve, the outer sleeve being fitted over the inner sleeve, one of the first frame and the second frame being a front frame and the other one being a rear frame; a second fixing piece including a rod section and a fitting section, the rod section being connected to a lower portion of the fitting section, the rod section protruding into any one of the first perforations of the inner sleeve from the first fixing piece, and the fitting section being fitted with the first fixing piece.

Abstract: A heat-shrinkable polyester film made of a polyester-forming resin composition includes a recycled material, and has an exothermic crystallization peak and an endothermic melting peak which are determined via differential scanning calorimetry, and which satisfy relationships of T2?T1?68° C. and T3?T2?78° C., where T1 represents an onset point of the exothermic crystallization peak, T2 represents an end point of the exothermic crystallization peak and an onset point of the endothermic melting peak, and T3 represents an end point of the endothermic melting peak. A method for manufacturing the heat-shrinkable polyester film is also disclosed.

Abstract: A hybrid power conversion circuit includes a high-side switch, a low-side switch, a transformer, a resonance tank, a first switch, a second switch, a first synchronous rectification switch, a second synchronous rectification switch, and a third switch. The resonance tank has an external inductor, an external capacitance, and an internal inductor. The first switch is connected to the external inductor. The second switch and a first capacitance form a series-connected path, and is connected to the external capacitance. The first and second synchronous rectification switches are respectively coupled to a first winding and a second winding. The third switch is connected to the second synchronous rectification switch. When an output voltage is less than a voltage interval, the hybrid power conversion circuit operates in a hybrid flyback conversion mode, and otherwise the hybrid power conversion circuit operates in a resonance conversion mode.

Abstract: A light emission apparatus includes a laser diode configured to emit a light; a laser driver electrically coupled to the laser diode, the laser driver being configured to drive the laser diode to generate the light; and an optical module arranged to receive the light emitted by the laser diode, the optical module comprising at least one optical element and being configured to adjust the light and emits a transmitting light; wherein the transmitting light emits from the optical module with an illumination angle and the optical module adjusts the light to vary the illumination angle.

Abstract: A method for optimizing a Polar-RNNA quantizer of MLC NAND flash based on deep learning comprises the following steps: Step S1: transforming an MLC flash detection task into a deep learning task, and obtaining three hard-decision read thresholds based on a neural network; Step S2: expanding six soft-decision read thresholds based on the three hard-decision read thresholds; Step S3: constructing an LLR mapping table, and obtaining new LLR information of MLC flash based on the LLR mapping table; Step S4: symmetrizing an MLC flash channel, and performing density evolution; and Step S5: optimizing the soft-decision read thresholds based on a genetic algorithm to obtain an optimal quantization interval. According to the invention, polar codes can be directly used for MLC flash channels without the arduous work of MLC flash channel modeling, so that the reliability of MLC flash is effectively improved.

Abstract: A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

Abstract: An electronic well lid based on electric control travel switch control relates to the technical field of electronic well lids. The electronic well lid based on electric control travel switch control includes a well seat in splined connection with a sliding ring. The sliding ring is provided with a well lid lifting mechanism. A garbage collection mechanism is arranged on the well seat. An arc-shaped groove is formed in the sliding ring. An anti-deviation mechanism is arranged in the arc-shaped groove of the sliding ring. Square grooves are communicated with square holes by way of arrangement of the well lid lifting mechanism and cooperation of first fixing rings and the square grooves. Thus, a drainage speed of the device is increased, pedestrians may continue to pass safely on the well lid in a drainage process of the device, and the protection effect for pedestrians in the drainage process is improved.

Abstract: A method includes removing a first dummy gate structure to form a recess around a first nanostructure and a second nanostructure; depositing a sacrificial layer in the recess with a flowable chemical vapor deposition (CVD); and patterning the sacrificial layer to leave a portion of the sacrificial layer between the first nanostructure and the second nanostructure. The method further include depositing a first work function metal in first recess; removing the first work function metal and the portion of the sacrificial layer from the recess; depositing a second work function metal in the recess, wherein the second work function metal is of an opposite type than the first work function metal; and depositing a fill metal over the second work function metal in the recess.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: A method includes providing a substrate, forming a patterned hard mask layer over the substrate, etching the patterned hard mask layer to form a hole that penetrates the patterned hard mask layer, forming a barrier portion in the hole, removing the patterned hard mask layer, and forming a gate structure over the substrate. Formation of the gate structure includes forming a dielectric body portion on the substrate. The barrier portion that is thicker than the dielectric body portion adjoins one end of the dielectric body portion. The dielectric body portion and the barrier portion are collectively referred to as a gate dielectric layer. Formation of the gate structure further includes forming a gate electrode on the gate dielectric layer and forming gate spacers on opposite sidewalls of the gate electrode. During formation of the gate spacers, a portion of the barrier portion is removed to form a recessed corner.