Abstract: The present disclosure provides an electronic device including a first sensing unit, a first transistor coupled to the first sensing unit, a second transistor coupled to the first transistor, a second sensing unit, a third transistor coupled to the second sensing unit, a fourth transistor coupled to the third transistor, a first signal line coupled to the second transistor and the fourth transistor, and a power line coupled to the first transistor and the third transistor, in which the power line is disposed between the first sensing unit and the second sensing unit.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate including a base and a fin structure over the base. The fin structure includes a nanostructure. The semiconductor device structure includes a gate stack over the base and wrapped around the nanostructure. The gate stack has an upper portion and a sidewall portion, the upper portion is over the nanostructure, and the sidewall portion is over a first sidewall of the nanostructure. The semiconductor device structure includes a first inner spacer and a second inner spacer over opposite sides of the sidewall portion. A sum of a first width of the first inner spacer and a second width of the second inner spacer is greater than a third width of the sidewall portion as measured along a longitudinal axis of the fin structure.

Abstract: A coding apparatus and a coding method are proposed. The coding apparatus includes a memory and a processor. The processor is configured to obtain a feature map, perform lossy compression on the feature map to generate a lossy feature map, perform lossless compression on the lossy feature map to generate a resultant feature map, and store the resultant feature map in the memory.

Abstract: A method for bonding tested wafers is provided. The method includes the following operations. A first wafer having a first surface is received, and the first wafer includes a test pad and a conductive pad at the first surface of the first wafer and the test pad has a recess caused by a test probe and the conductive pad is electrically connected to the test pad. The first surface of the first wafer is planarized. A first hybrid bonding layer is formed over the first surface of the first wafer. The first wafer and a second wafer are bonded to connect the first hybrid bonding layer and a second hybrid bonding layer on the second water. A semiconductor structure and a method for testing pre-bonded wafers are also provided.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate including a base and a fin structure over the base. The fin structure includes a nanostructure. The semiconductor device structure includes a gate stack over the base and wrapped around the nanostructure. The gate stack has an upper portion and a sidewall portion, the upper portion is over the nanostructure, and the sidewall portion is over a first sidewall of the nanostructure. The semiconductor device structure includes a first inner spacer and a second inner spacer over opposite sides of the sidewall portion. A sum of a first width of the first inner spacer and a second width of the second inner spacer is greater than a third width of the sidewall portion as measured along a longitudinal axis of the fin structure.

Abstract: A data logger device is provided. The data logger device according to an example embodiment of the present invention comprises: a sensing unit mounted on one surface of a flexible printed circuit board, and including a sensor that detects at least one piece of information; a display unit that, when an abnormal state is detected on the basis of information measured via the sensing unit, irreversibly displays the abnormal state; a control unit that controls driving of the sensing unit and the display unit; a power supply unit that provides driving power to the control unit; and a cover member that prevents the outside exposure of the sensing unit, the display unit, the control unit, and the power supply unit.

Abstract: A circuit assembly includes an IC die and a stack of capacitor dies. The IC die has a first hybrid bonding layer. The stack of capacitor dies includes a first capacitor die and a second capacitor die. The first capacitor die has a second hybrid bonding layer in contact with the first hybrid bonding layer. The second capacitor die is stacked over the first capacitor die. The first capacitor die has a third hybrid bonding layer. The second capacitor die has a fourth hybrid bonding layer coupled to the third hybrid bonding layer. The second capacitor die has a first side and a second side, the fourth hybrid bonding layer is formed on the second side, a plurality of conductive vias is formed on the first side, and the second capacitor die further comprises a plurality of interface bumps electrically connecting to the conductive vias.

Abstract: An operation method of electronic device, comprising providing a first panel, wherein the first panel comprises first substrate, first medium layer disposed on the first substrate, a first electrode layer disposed between the first substrate and the first medium layer, and a second electrode layer disposed between the first electrode layer and the first medium layer; providing a second panel overlapped with the first panel, providing an adhesive layer, wherein the first panel is attached to the second panel through the adhesive layer, and the first panel and the second panel present a mirror-symmetrical structure with the adhesive layer as the axis of symmetry; applying a first voltage to the first electrode layer; applying a second voltage to the second electrode layer; applying a third voltage to the first electrode layer.

Abstract: A circuit assembly includes an integrated circuit (IC) die and a capacitor die. The IC die has a first hybrid bonding layer. The capacitor die is stacked with the IC die, and is configured to include a capacitor coupled to the IC die, and has a second hybrid bonding layer in contact with the first hybrid bonding layer; wherein the IC die is electrically coupled to the capacitor die through the first hybrid bonding layer and the second hybrid bonding layer.

Abstract: The present disclosure provides an electronic device including a first sensing unit, a first transistor coupled to the first sensing unit, a second transistor coupled to the first transistor, a second sensing unit, a third transistor coupled to the second sensing unit, a fourth transistor coupled to the third transistor, a first signal line coupled to the second transistor and the fourth transistor, and a power line coupled to the first transistor and the third transistor, in which the power line is disposed between the first sensing unit and the second sensing unit.

Abstract: The present disclosure provides an electronic device including a first sensing circuit, a second sensing circuit and a power line. The first sensing circuit includes a first sensing unit and a first transistor, and a first end of the first sensing unit is coupled to a control end of the first transistor. The second sensing circuit includes a second sensing unit and a second transistor, and a first end of the second sensing unit is coupled to a control end of the second transistor. A first end of the first transistor and a first end of the second transistor are coupled to the power line.

Abstract: A traffic light information providing apparatus, a vehicle system including the same, and a method thereof may include: a storage configured to accumulate and store intersection traffic light information; and a processor configured to convert turn-on information of a traffic light of an intersection in front of a vehicle into a database in the storage during driving of the vehicle, and configured to pre-provide a user with traffic light information at the intersection or traffic light information at a crosswalk in a turning direction before or while passing through the intersection based on the converted database of the turn-on information of the intersection traffic light.

Abstract: An electronic device including a first panel and a second panel overlapped with the first panel is provided. The first panel includes a substrate, a first medium layer, a first electrode layer and a second electrode layer. The first medium layer is disposed on the substrate. The first electrode layer is disposed between the substrate and the first medium layer. The second electrode layer is disposed between the first electrode layer and the first medium layer. A first voltage is applied to the first electrode layer, a second voltage is applied to the second electrode layer, and the first voltage is different from the second voltage.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an n-type doped region in a semiconductor substrate and forming a semiconductor stack over the semiconductor substrate. The semiconductor stack has multiple sacrificial layers and multiple semiconductor layers laid out alternately. The method also includes introducing n-type dopants from the n-type doped region into the semiconductor stack during the forming of the semiconductor stack. The method further includes patterning the semiconductor stack to form a fin structure and forming a dummy gate stack to wrap around a portion of the fin structure. In addition, the method includes removing the dummy gate stack and the sacrificial layers to release multiple semiconductor nanostructures made up of remaining portions of the semiconductor layers. The method includes forming a metal gate stack to wrap around the semiconductor nanostructures.

Abstract: The present disclosure provides an electronic device including a first sensing circuit, a second sensing circuit and a power line. The first sensing circuit includes a first sensing unit and a first transistor, and a first end of the first sensing unit is coupled to a control end of the first transistor. The second sensing circuit includes a second sensing unit and a second transistor, and a first end of the second sensing unit is coupled to a control end of the second transistor. A first end of the first transistor and a first end of the second transistor are coupled to the power line.

Abstract: A method to manufacture a semiconductor device includes: bonding a first wafer and a second wafer to be stacked vertically with one another, in which the first wafer provides a plurality of memory components and the second wafer provides a control circuit; forming a plurality of input/output channels on a surface of one of the first and second wafers; and cutting the bonded first and second wafers into a plurality of dices; wherein a plurality of first conductive contacts in the first wafer are electrically connected to the control circuit and the first conductive contacts in combinations with a plurality of first conductive vias in the first wafer form a plurality of transmission channels through which the control circuit is capable to access the memory components.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate including a base and a fin structure over the base. The fin structure includes a nanostructure. The semiconductor device structure includes a gate stack over the base and wrapped around the nanostructure. The gate stack has an upper portion and a sidewall portion, the upper portion is over the nanostructure, and the sidewall portion is over a first sidewall of the nanostructure. The semiconductor device structure includes a first inner spacer and a second inner spacer over opposite sides of the sidewall portion. A sum of a first width of the first inner spacer and a second width of the second inner spacer is greater than a third width of the sidewall portion as measured along a longitudinal axis of the fin structure.

Abstract: The present application discloses a method and a device for marking dirty bits of an L2P table based on a SSD, the method includes: obtaining a marking request of dirty bits in the L2P table based on the solid state drive; and broadening a corresponding dirty bit in the L2P table to 2 bits according to the request; and setting the dirty bit from a binary number 00 to a binary number 01 through a state machine when a first write command request is obtained; setting the dirty bit from the binary number 01 to a binary number 10 through the state machine when flush operation starts; and setting the dirty bit from the binary number 10 to a binary number 11 through the state machine when a second write command request is obtained during the flush operation.

Abstract: A data logger device is provided. The data logger device according to an example embodiment of the present invention comprises: a sensing unit mounted on one surface of a flexible printed circuit board, and including a sensor that detects at least one piece of information; a display unit that, when an abnormal state is detected on the basis of information measured via the sensing unit, irreversibly displays the abnormal state; a control unit that controls driving of the sensing unit and the display unit; a power supply unit that provides driving power to the control unit; and a cover member that prevents the outside exposure of the sensing unit, the display unit, the control unit, and the power supply unit.

Abstract: A navigation method for a medical operation and implemented by a robotic system is provided. The method includes the steps of: receiving, at a processor of the robotic system, at least one set of navigation data; receiving or generating at least one three-dimensional model of the virtual object in the navigation data; calculating the navigation data to generate a virtual environment and at least one navigation instruction; and presenting, at a user interface associated with the robotic system, the virtual environment and/or the navigation instruction to a user of the robotic system for the user to refer to during the medical operation.