Patents by Inventor An-Yu CHANG

An-Yu CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Two-dimensional (2D) material for oxide semiconductor (OS) ferroelectric field-effect transistor (FeFET) device
    Patent number: 11955548
    Abstract: The present disclosure relates a ferroelectric field-effect transistor (FeFET) device. In some embodiments, the FeFET device includes a ferroelectric layer having a first side and a second side opposite to the first side and a gate electrode disposed along the first side of the ferroelectric layer. The FeFET device further includes an OS channel layer disposed along the second side of the ferroelectric layer opposite to the first side and a pair of source/drain regions disposed on opposite sides of the OS channel layer. The FeFET device further includes a 2D contacting layer disposed along the OS channel layer. The OS channel layer has a first doping type, and the 2D contacting layer has a second doping type different than the first doping type.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mauricio Manfrini, Chih-Yu Chang, Sai-Hooi Yeong
  • Semiconductor Device and Method
    Publication number: 20240112905
    Abstract: A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.
    Type: Application
    Filed: November 30, 2023
    Publication date: April 4, 2024
    Inventors: Ching-Yu Chang, Jei Ming Chen, Tze-Liang Lee
  • COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE
    Publication number: 20240113187
    Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having one or more interior surfaces forming a recess within an upper surface of the substrate. Source/drain regions are disposed within the substrate on opposing sides of the recess. A first gate dielectric is arranged along the one or more interior surfaces forming the recess, and a second gate dielectric is arranged on the first gate dielectric and within the recess. A gate electrode is disposed on the second gate dielectric. The second gate dielectric includes one or more protrusions that extend outward from a recessed upper surface of the second gate dielectric and that are arranged along opposing sides of the second gate dielectric.
    Type: Application
    Filed: January 5, 2023
    Publication date: April 4, 2024
    Inventors: Jhu-Min Song, Ying-Chou Chen, Yi-Kai Ciou, Chien-Chih Chou, Fei-Yun Chen, Yu-Chang Jong, Chi-Te Lin
  • Semiconductor device and method
    Patent number: 11948798
    Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.
    Type: Grant
    Filed: July 16, 2021
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Chang, Jung-Hau Shiu, Jen Hung Wang, Tze-Liang Lee
  • Ferroelectric memory device and method of forming the same
    Patent number: 11950427
    Abstract: A memory cell includes a transistor over a semiconductor substrate. The transistor includes a ferroelectric layer arranged along a sidewall of a word line. The ferroelectric layer includes a species with valence of 5, valence of 7, or a combination thereof. An oxide semiconductor layer is electrically coupled to a source line and a bit line. The ferroelectric layer is disposed between the oxide semiconductor layer and the word line.
    Type: Grant
    Filed: July 21, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Lu, Sai-Hooi Yeong, Bo-Feng Young, Yu-Ming Lin, Chih-Yu Chang
  • ANTIFERROELECTRIC NON-VOLATILE MEMORY
    Publication number: 20240107776
    Abstract: An antiferroelectric field effect transistor (Anti-FeFET) of a memory cell includes an antiferroelectric layer instead of a ferroelectric layer. The antiferroelectric layer may operate based on a programmed state and an erased state in which the antiferroelectric layer is in a fully polarized alignment and a non-polarized alignment (or a random state of polarization), respectively. This enables the antiferroelectric layer in the FeFET to provide a sharper/larger voltage drop for an erase operation of the FeFET (e.g., in which the FeFET switches or transitions from the programmed state to the erased state) relative to a ferroelectric material layer that operates based on switching between two opposing fully polarized states.
    Type: Application
    Filed: January 5, 2023
    Publication date: March 28, 2024
    Inventors: Chun-Chieh LU, Chih-Yu CHANG, Yu-Chuan SHIH, Huai-Ying HUANG, Yu-Ming LIN
  • METHOD FOR FORMING PATTERNED PHOTORESIST
    Publication number: 20240103375
    Abstract: A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 28, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chih HO, Ching-Yu CHANG, Chin-Hsiang LIN
  • Method of manufacturing semiconductor devices and pattern formation method
    Patent number: 11942322
    Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.
    Type: Grant
    Filed: April 9, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: An-Ren Zi, Chun-Chih Ho, Yahru Cheng, Ching-Yu Chang
  • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20240096623
    Abstract: A method of manufacturing a semiconductor device includes forming a first layer comprising an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing material and one or more selected from the group consisting of a photoacid generator, an actinic radiation absorbing additive including an iodine substituent, and a silicon-containing monomer having iodine or phenol group substituents. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.
    Type: Application
    Filed: March 17, 2023
    Publication date: March 21, 2024
    Inventors: Chieh-Hsin HSIEH, Wei-Han LAI, Ching-Yu CHANG
  • MEMORY CELL AND METHOD OF OPERATING THE SAME
    Publication number: 20240096388
    Abstract: A memory cell includes a read word line extending in a first direction, a write transistor, and a read transistor coupled to the write transistor. The read transistor includes a ferroelectric layer, a drain terminal of the read transistor directly connected to the read word line, and a source terminal of the read transistor coupled to a first node. The write transistor is configured to adjust a polarization state of the read transistor, the polarization state corresponding to a stored data value of the memory cell.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 21, 2024
    Inventors: Bo-Feng YOUNG, Sai-Hooi YEONG, Chao-I WU, Chih-Yu CHANG, Yu-Ming LIN
  • METAL INSULATOR METAL (MIM) STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20240096928
    Abstract: A semiconductor structure and manufacturing method thereof are provided. The semiconductor structure includes a substrate and a metallization structure over the substrate. The metallization structure includes a MIM structure, a first contact and a second contact. The MIM structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, and a top electrode layer on the ferroelectric layer. The ferroelectric layer is substantially made of lead zirconate titanate (PZT), BaTiO3 (BTO), or barium strontium titanate (BST), and a thickness of the ferroelectric layer is greater than a thickness of the dielectric layer.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 21, 2024
    Inventors: SAI-HOOI YEONG, CHIH-YU CHANG, CHUN-YEN PENG, CHI ON CHUI
  • Dual dopant source/drain regions and methods of forming same
    Patent number: 11935793
    Abstract: A method includes forming a source/drain region in a semiconductor fin; after forming the source/drain region, implanting first impurities into the source/drain region; and after implanting the first impurities, implanting second impurities into the source/drain region. The first impurities have a lower formation enthalpy than the second impurities. The method further includes after implanting the second impurities, annealing the source/drain region.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Chang Lin, Tien-Shun Chang, Chun-Feng Nieh, Huicheng Chang, Yee-Chia Yeo
  • Palladium precatalyst for cross-coupling reaction and synthesis method thereof
    Patent number: 11931730
    Abstract: The present invention provides a palladium precatalyst for cross-coupling reaction, the palladium precatalyst comprising a structure represented by following formula 1: wherein, R1 and R2 are the same, and R1 and R2 are substituted or unsubstituted phenyl; R3 and R4 are the same, and R3 and R4 are substituted or unsubstituted phenyl or cyclohexyl.
    Type: Grant
    Filed: December 14, 2022
    Date of Patent: March 19, 2024
    Assignee: PROVIDENCE UNIVERSITY
    Inventors: Yu-Chang Chang, Siou-Wei Liang
  • Photoresist composition and method of forming photoresist pattern
    Patent number: 11934101
    Abstract: A method of forming a photoresist pattern includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist composition includes metal particles and a thermally stable ligand attached to the metal particles. The thermally stable ligand includes branched or unbranched, cyclic or non-cyclic, C1-C7 alkyl groups or C1-C7 fluoroalkyl groups. The C1-C7 alkyl or C1-C7 fluoroalkyl groups include one or more of —CF3, —SH, —OH, ?O, —S—, —P—, —PO2, —C(?O)SH, —C(?O)OH, —C(?O)O—, —O—, —N—, —C(?O)NH, —SO2OH, —SO2SH, —SOH, or —SO2—. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. In an embodiment, the method includes heating the photoresist layer before selectively exposing the photoresist layer to actinic radiation.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: An-Ren Zi, Ching-Yu Chang
  • Method of manufacturing a semiconductor device
    Patent number: 11935757
    Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.
    Type: Grant
    Filed: April 10, 2023
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Hao Chen, Wei-Han Lai, Ching-Yu Chang, Chin-Hsiang Lin
  • Optical system
    Patent number: 11934027
    Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: March 19, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
  • SELF-POWERED FORMALDEHYDE SENSING DEVICE
    Publication number: 20240085369
    Abstract: Disclosed is a self-powered formaldehyde sensing device, comprising: a triboelectric material electrode layer including a first substrate and a first electrode layer formed on the first substrate; a triboelectric material dielectric layer including a second substrate, a second electrode layer formed on the second substrate, a dielectric reacting layer formed on the second electrode layer, and a reaction modification layer formed on the dielectric reacting layer to surface-modify the dielectric reacting layer, the reaction modification layer being a phosphomolybdic acid complex (cPMA) layer, the phosphomolybdic acid complex of the phosphomolybdic acid complex layer being obtained by dissolving 4,4?-bipyridine (BPY) in isopropanol (IPA) and then mixing with phosphomolybdic acid (PMA) solution; an elastic spacer; and an external circuit.
    Type: Application
    Filed: December 21, 2022
    Publication date: March 14, 2024
    Applicant: National Taiwan University of Science and Technology
    Inventors: Chih-Yu Chang, Chun-Yi Ho, Yu-Hsuan Cheng, Ying-Ying Chen
  • GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBON CHANNEL STRUCTURES
    Publication number: 20240088253
    Abstract: Gate-all-around integrated circuit structures having dual nanowire/nanoribbon channel structures, and methods of fabricating gate-all-around integrated circuit structures having dual nanowire/nanoribbon channel structures, are described. For example, an integrated circuit structure includes a first vertical arrangement of nanowires above a substrate. A dielectric cap is over the first vertical arrangement of nanowires. A second vertical arrangement of nanowires is above the substrate. Individual ones of the second vertical arrangement of nanowires are laterally staggered with individual ones of the first vertical arrangement of nanowires and the dielectric cap.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 14, 2024
    Inventors: Tanuj TRIVEDI, Rahul RAMASWAMY, Jeong Dong KIM, Babak FALLAHAZAD, Hsu-Yu CHANG, Ting CHANG, Nidhi NIDHI, Walid M. HAFEZ
  • Interconnect structures including a fin structure and a metal cap
    Patent number: 11929314
    Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: March 12, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Hsien Huang, Peng-Fu Hsu, Yu-Syuan Cai, Min-Hsiu Hung, Chen-Yuan Kao, Ken-Yu Chang, Chun-I Tsai, Chia-Han Lai, Chih-Wei Chang, Ming-Hsing Tsai
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR DEVICE
    Publication number: 20240079472
    Abstract: The present disclosure provides a semiconductor device and a method for forming a semiconductor device. The semiconductor device includes a substrate, and a first gate dielectric stack over the substrate, wherein the first gate dielectric stack includes a first ferroelectric layer, and a first dielectric layer coupled to the first ferroelectric layer, wherein the first ferroelectric layer includes a first portion made of a ferroelectric material in orthorhombic phase, a second portion made of the ferroelectric material in monoclinic phase, and a third portion made of the ferroelectric material in tetragonal phase, wherein a total volume of the second portion is greater than a total volume of the first portion, and the total volume of the first portion is greater than a total volume of the third portion.
    Type: Application
    Filed: November 6, 2023
    Publication date: March 7, 2024
    Inventors: CHUN-YEN PENG, TE-YANG LAI, BO-FENG YOUNG, CHIH-YU CHANG, SAI-HOOI YEONG, CHI ON CHUI