Abstract: A method of forming vias and pillars using printed masks is described. The printed masks are typically made from droplets that include suspended metal nanoparticles. The use of metal to the same metal nanoparticles in both the mask formation and the subsequent formation of conducting structures simplifies the fabrication process.

Abstract: A method forms a first active electronic layer, prints an array of pillars on the first active electronic layer, dispenses a curable polymer over the array of pillars, molds the curable polymer by contacting the curable polymer with a mold structure to displace the curable polymer from upper surfaces of the pillars, cures the curable polymer to produce a hardened polymer, and removes the array of pillars to leave an array of holes in the hardened polymer. Another method provides a substrate having selected areas, prints an array of pillars on the substrate, dispenses a curable polymer over the array of pillars, molds the curable polymer by contacting the array of pillars with a mold structure to displace the curable polymer from upper surfaces of the pillars, cures the curable polymer to produce a hardened polymer, and removes the array of pillars to leave an array of holes in the hardened polymer corresponding to the selected areas.

Abstract: A transistor is formed by applying modifier coatings to source and drain contacts and/or to the channel region between those contacts. The modifier coatings are selected to adjust the surface energy pattern in the source/drain/channel region such that semiconductor printing fluid is not drawn away from the channel region. For example, the modifier coatings for the contacts can be selected to have substantially the same surface energy as the modifier coating for the channel region. Semiconductor printing fluid deposited on the channel region therefore settles in place (due to the lack of a surface energy differential) and forms a relatively thick active semiconductor region between the contacts. Alternatively, the modifier coatings can be selected to have lower surface energies than the modifier coating in the channel region, which actually causes semiconductor printing fluid to be drawn towards the channel region.

Abstract: An improved method of forming a semiconducting polymer layer protected by an insulating polymer layer is described. In the method, a material for forming a semiconducting polymer and an insulating polymer are dissolved in a solvent. The blended solution is deposited on a substrate where the semiconducting polymer and insulating polymer segregate. Upon evaporation of the solvent, the semiconducting material forms the active region of a TFT and the insulating polymer minimizes the exposure of the semiconducting polymer to air.

Abstract: An improved method of interconnecting electronic devices is described. In the method a blended material for forming a conducting layer and an insulating layer are deposited between a contact of a first electronic device and a second electronic device. The blended material leads to formation of a conductor overlayed by an insulator such that after formation, the conductor is capable of carrying current from the first electronic device to the second electronic device and the insulator forms a protective layer over the conductor.

Abstract: A transistor is formed by applying modifier coatings to source and drain contacts and/or to the channel region between those contacts. The modifier coatings are selected to adjust the surface energy pattern in the source/drain/channel region such that semiconductor printing fluid is not drawn away from the channel region. For example, the modifier coatings for the contacts can be selected to have substantially the same surface energy as the modifier coating for the channel region. Semiconductor printing fluid deposited on the channel region therefore settles in place (due to the lack of a surface energy differential) and forms a relatively thick active semiconductor region between the contacts. Alternatively, the modifier coatings can be selected to have lower surface energies than the modifier coating in the channel region, which actually causes semiconductor printing fluid to be drawn towards the channel region.