Patents by Inventor Ana R. Londergan
Ana R. Londergan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150099371Abstract: Systems, methods and apparatus for processing a substrate are described. A reactor includes a reaction chamber, a composite nozzle, and a reaction chamber outlet. The composite nozzle extends along a side of the chamber and includes a first nozzle and a second nozzle separate from and parallel the first nozzle. Each nozzle includes a body extending along an axis of elongation, an inlet providing communication between at least one source of a common species and an inner volume of the body, and holes spaced along the axis. The holes provide fluid communication between the inner volume and the chamber. The outlet is configured to allow flow from the composite nozzle through the chamber to the outlet. The first nozzle inlet is positioned at a first end of the first body, and the second nozzle inlet is positioned at a second end of the second body. The second end is opposite the first end of the first body.Type: ApplicationFiled: October 3, 2013Publication date: April 9, 2015Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.Inventors: Ana R. Londergan, Sandeep K. Giri, Teruo Sasagawa, Shih-chou Chiang, Tsutomu Satoyoshi, Tanaka Seiji
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Publication number: 20150099359Abstract: Systems, methods and apparatus for processing a substrate are disclosed. A reactor for processing a substrate includes a reaction chamber, a substrate support, a nozzle, and an outlet. The chamber is configured to process a single substrate on the substrate support. The nozzle extends along an axis of elongation along a side of the chamber. The nozzle includes a nozzle body forming an inner volume, an inlet providing fluid communication between a reactant source and the inner volume, and a plurality of holes spaced along the axis of elongation. The holes provide fluid communication between the inner volume of the nozzle body and the reaction chamber. The nozzle is configured such that fluid conductance through the holes increases with increasing distance from the inlet. The outlet is configured to allow flow from the nozzle through the reaction chamber to the outlet. The flow is parallel to a major surface of the substrate.Type: ApplicationFiled: October 3, 2013Publication date: April 9, 2015Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.Inventors: Ana R. Londergan, Sandeep K. Giri, Teruo Sasagawa, Shih Chou Chiang
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Publication number: 20140349469Abstract: This disclosure provides systems, methods and apparatus for processing multiple substrates in a processing tool. An apparatus for processing substrates can include a process chamber, a common reactant source, and a common exhaust pump. The process chamber can be configured to process multiple substrates. The process chamber can include a plurality of stacked individual subchambers. Each subchamber can be configured to process one substrate. The common reactant source can be configured to provide reactant to each of the subchambers in parallel. The common exhaust pump can be connected to each of the subchambers.Type: ApplicationFiled: May 22, 2013Publication date: November 27, 2014Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.Inventors: Teruo Sasagawa, Sandeep K. Giri, Ana R. Londergan, Shih-chou Chiang
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Publication number: 20140267756Abstract: This disclosure provides systems, methods and apparatus for forming microbolometers on glass substrates. In one aspect, the formation of microbolometers on glass substrates can reduce the size and cost of the resultant array and associated circuitry. In one aspect, a portion of the measurement and control circuitry can be formed by thin-film deposition on the glass substrate, while sensitive measurement and control circuitry can be formed on ancillary CMOS substrates. In one aspect, the microbolometers may be packaged using a variety of techniques, including a wafer-level packaging process or a pixel-level packaging process.Type: ApplicationFiled: March 14, 2013Publication date: September 18, 2014Applicant: QUALCOMM MEMS Technologies, Inc.Inventors: Evgeni Gousev, David W. Burns, Nicholas I. Buchan, Ana R. Londergan
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Patent number: 8536059Abstract: Etching equipment and methods are disclosed herein for more efficient etching of sacrificial material from between permanent MEMS structures. An etching head includes an elongate etchant inlet structure, which may be slot-shaped or an elongate distribution of inlet holes. A substrate is supported in proximity to the etching head in a manner that defines a flow path substantially parallel to the substrate face, and permits relative motion for the etching head to scan across the substrate.Type: GrantFiled: February 18, 2008Date of Patent: September 17, 2013Assignee: QUALCOMM MEMS Technologies, Inc.Inventors: Khurshid Syed Alam, Evgeni Gousev, Marc Maurice Mignard, David Heald, Ana R. Londergan, Philip Don Floyd
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Publication number: 20120206462Abstract: Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.Type: ApplicationFiled: April 23, 2012Publication date: August 16, 2012Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.Inventors: Ana R. Londergan, Bangalore R. Natarajan, Evgeni Gousev, James Randolph Webster, David Heald
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Patent number: 8164815Abstract: Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.Type: GrantFiled: June 7, 2010Date of Patent: April 24, 2012Assignee: Qualcomm Mems Technologies, Inc.Inventors: Ana R. Londergan, Bangalore R. Natarajan, Evgeni Gousev, James Randolph Webster, David Heald
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Publication number: 20110253046Abstract: A gas distribution system for a reactor having at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece deposition surface such that at least a lower one of the gas source orifice arrays is located between a higher one of the gas source orifice arrays and the work-piece deposition surface. Orifices in the higher one of the gas source orifice arrays may spaced an average of 0.2-0.8 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface, while orifices in the lower one of the gas source orifice arrays may be spaced an average of 0.1-0.4 times a distance between the higher one of the gas source orifice array and the work-piece deposition surface.Type: ApplicationFiled: June 24, 2011Publication date: October 20, 2011Inventors: Jeremie J. Dalton, M. Ziaul Karim, Ana R. Londergan
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Patent number: 7981472Abstract: A method of introducing gasses through a gas distribution system into a reactor involves flowing the gasses through at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece. During different time intervals, a purge gas and different reactive precursors are flowed into the reactor from different ones of the gas source orifice arrays. One of the precursors may be associated with a soft saturating atomic layer deposition half reaction and another of the precursors associated with a strongly saturating atomic layer deposition half reaction. An upper one of the gas source orifice arrays may be a relatively planar gas orifice array.Type: GrantFiled: September 3, 2009Date of Patent: July 19, 2011Assignee: Aixtron, Inc.Inventors: Jeremie J. Dalton, M. Ziaul Karim, Ana R. Londergan
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Patent number: 7981473Abstract: A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another.Type: GrantFiled: March 1, 2004Date of Patent: July 19, 2011Assignee: Aixtron, Inc.Inventors: Gi Youl Kim, Anuranjan Srivastava, Thomas E. Seidel, Ana R. Londergan, Sasangan Ramanathan
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Publication number: 20100245979Abstract: Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.Type: ApplicationFiled: June 7, 2010Publication date: September 30, 2010Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.Inventors: Ana R. Londergan, Bangalore R. Natarajan, Evgeni Gousev, James Randolph Webster, David Heald
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Publication number: 20100219155Abstract: Etching equipment and methods are disclosed herein for more efficient etching of sacrificial material from between permanent MEMS structures. An etching head includes an elongate etchant inlet structure, which may be slot-shaped or an elongate distribution of inlet holes. A substrate is supported in proximity to the etching head in a manner that defines a flow path substantially parallel to the substrate face, and permits relative motion for the etching head to scan across the substrate.Type: ApplicationFiled: February 18, 2008Publication date: September 2, 2010Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.Inventors: Khurshid Syed Alam, Evgeni Gousev, Marc Maurice Mignard, David Heald, Ana R. Londergan, Philip Don Floyd
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Patent number: 7733552Abstract: Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.Type: GrantFiled: March 21, 2007Date of Patent: June 8, 2010Assignee: Qualcomm Mems Technologies, IncInventors: Ana R. Londergan, Bangalore R. Natarajan, Evgeni Gousev, James Randolph Webster, David Heald
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Publication number: 20090324829Abstract: A gas distribution system for a reactor having at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece deposition surface such that at least a lower one of the gas source orifice arrays is located between a higher one of the gas source orifice arrays and the work-piece deposition surface. Orifices in the higher one of the gas source orifice arrays may spaced an average of 0.2-0.8 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface, while orifices in the lower one of the gas source orifice arrays may be spaced an average of 0.1-0.4 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface.Type: ApplicationFiled: September 3, 2009Publication date: December 31, 2009Inventors: Jeremie J. Dalton, M. Ziaul Karim, Ana R. Londergan
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Publication number: 20080231931Abstract: Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.Type: ApplicationFiled: March 21, 2007Publication date: September 25, 2008Applicant: QUALCOMM IncorporatedInventors: Ana R. Londergan, Bangalore R. Natarajan, Evgeni Gousev, James Randolph Webster, David Heald
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Publication number: 20080131601Abstract: A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another.Type: ApplicationFiled: March 1, 2004Publication date: June 5, 2008Inventors: Gi Youl Kim, Anuranjan Srivastava, Thomas E. Seidel, Ana R. Londergan, Sasangan Ramanathan
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Patent number: 7183649Abstract: A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer by layer ALD growth. A second layer is positioned between the first and third layers and provides a conducting diffusion barrier between the substrate and subsequent overlaying film. A third layer has a surface that is configured to provide adhesion and a texture template in preparation for a subsequent overlaying film. The composite engineered barrier structures are applied to interconnect, capacitor and transistor applications.Type: GrantFiled: April 12, 2002Date of Patent: February 27, 2007Assignee: Genus, Inc.Inventors: Ana R. Londergan, Thomas E. Seidel
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Patent number: 7164203Abstract: A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer by layer ALD growth. A second layer is positioned between the first and third layers and provides a conducting diffusion barrier between the substrate and subsequent overlaying film. A third layer has a surface that is configured to provide adhesion and a texture template in preparation for a subsequent overlaying film. The composite engineered barrier structures are applied to interconnect, capacitor and transistor applications.Type: GrantFiled: August 30, 2005Date of Patent: January 16, 2007Assignee: Genus, Inc.Inventors: Ana R. Londergan, Thomas E. Seidel
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Patent number: 7129580Abstract: A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer by layer ALD growth. A second layer is positioned between the first and third layers and provides a conducting diffusion barrier between the substrate and subsequent overlaying film. A third layer has a surface that is configured to provide adhesion and a texture template in preparation for a subsequent overlaying film. The composite engineered barrier structures are applied to interconnect, capacitor and transistor applications.Type: GrantFiled: August 30, 2005Date of Patent: October 31, 2006Assignee: Genus, Inc.Inventors: Ana R. Londergan, Thomas E. Seidel
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Patent number: 6905547Abstract: An apparatus with a processing chamber subjects a substrate to atomic layer deposition and deposits a film layer. The processing chamber includes at least a first gas switching port. A gas switching manifold is coupled to the processing chamber and configured to mix reactants with a neutral carrier gas and provide gas switching functionality for ALD processes. An upstream gas source and pressure setting apparatus is coupled to the gas switching manifold. The upstream gas source and pressure setting apparatus includes at least a first reactant source, a second reactant source and a neutral gas source. Additionally, the upstream gas source and pressure setting apparatus is configured to provide a cascade of continuing, decreasing pressures.Type: GrantFiled: June 17, 2002Date of Patent: June 14, 2005Assignee: Genus, Inc.Inventors: Ana R. Londergan, Thomas E. Seidel, Lawrence D. Matthysse, Ed C. Lee