Abstract: Embodiments of the invention describe apparatuses, systems, and methods of thermal management for photonic integrated circuits (PICs). Embodiments include a first device and a second device comprising including waveguides, wherein the first and second devices have different thermal operating conditions. A first region is adjacent to a waveguide of the first device, wherein its optical mode is to be substantially confined by the first region, and wherein the first region has a first thermal conductivity to dissipate heat based on the thermal operating condition of the first device. A second region is adjacent to a waveguide of the second device, wherein its optical mode is to be substantially confined by the second region, and wherein the second region has a second thermal conductivity to dissipate heat based on the thermal operating condition of the second device. In some embodiments, thermal cross talk is reduced without significantly affecting optical performance.

Abstract: An example photonic integrated circuit includes a transmitter circuit with a optical communication path to an optical coupler configured to couple with an optical fiber. The optical communication path has a propagation direction away from the transmitter circuit and towards the optical coupler. A counter-propagating tap diverts light sent by a light source backward against the propagation direction of the optical communication path. A photodiode receives the diverted light and measures its power level. The photodiode generates a feedback signal for the optical coupler and provides the feedback signal to the optical coupler. The optical coupler receives the feedback signal and adjusts a coupling alignment of the optical communication path to the optical fiber based on the feedback signal, which indicates the measured power level of the diverted counter-propagating light.

Abstract: Embodiments describe transceiver architectures to enable ‘loopback’ operation, thereby allowing or on-chip or intra module characterization of the transceiver. This includes but is not limited to tests such as bit error rate (BER) characterization, received power characterization and calibration of filters (MUX, DMUX etc.) present in the transceiver. Embodiments may also describe architectures for superimposing low-speed data on to the signal coming out of a transmitter, which in turn enables low frequency communication between network elements in the external link.

Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

Abstract: Embodiments of the invention comprise a photonic integrated circuit (PIC) including an optical device and a silicon integrated circuit (IC) (such as an application specific IC (ASIC)) including a controller for the optical device. The PIC and silicon IC are integrated on a shared substrate. The PIC further includes one or more monitor photodiodes (MPDs) that are monolithically integrated with the optical device; the monolithic integration of several optical components enables ratiometric control of the optical device. Simplified control processes are executed based on the detected MPD photocurrents, on the function of the optical device (e.g., whether the device as an SOA, modulator, or attenuator), and on the application of the optical device.

Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

Abstract: Embodiments describe transceiver architectures to enable ‘loopback’ operation, thereby allowing or on-chip or intra module characterization of the transceiver. This includes but is not limited to tests such as bit error rate (BER) characterization, received power characterization and calibration of filters (MUX, DMUX etc.) present in the transceiver. Embodiments may also describe architectures for superimposing low-speed data on to the signal coming out of a transmitter, which in turn enables low frequency communication between network elements in the external link.

Abstract: Embodiments of the invention describe apparatuses, systems, and methods of thermal management for photonic integrated circuits (PICs). Embodiments include a first device and a second device comprising including waveguides, wherein the first and second devices have different thermal operating conditions. A first region is adjacent to a waveguide of the first device, wherein its optical mode is to be substantially confined by the first region, and wherein the first region has a first thermal conductivity to dissipate heat based on the thermal operating condition of the first device. A second region is adjacent to a waveguide of the second device, wherein its optical mode is to be substantially confined by the second region, and wherein the second region has a second thermal conductivity to dissipate heat based on the thermal operating condition of the second device. In some embodiments, thermal cross talk is reduced without significantly affecting optical performance.

Abstract: Embodiments describe transceiver architectures to enable ‘loopback’ operation, thereby allowing or on-chip or intra module characterization of the transceiver. This includes but is not limited to tests such as bit error rate (BER) characterization, received power characterization and calibration of filters (MUX, DMUX etc.) present in the transceiver. Embodiments may also describe architectures for superimposing low-speed data on to the signal coming out of a transmitter, which in turn enables low frequency communication between network elements in the external link.

Abstract: Embodiments of the invention describe apparatuses, systems, and methods of thermal management for photonic integrated circuits (PICs). Embodiments include a first device and a second device comprising including waveguides, wherein the first and second devices have different thermal operating conditions. A first region is adjacent to a waveguide of the first device, wherein its optical mode is to be substantially confined by the first region, and wherein the first region has a first thermal conductivity to dissipate heat based on the thermal operating condition of the first device. A second region is adjacent to a waveguide of the second device, wherein its optical mode is to be substantially confined by the second region, and wherein the second region has a second thermal conductivity to dissipate heat based on the thermal operating condition of the second device. In some embodiments, thermal cross talk is reduced without significantly affecting optical performance.

Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

Abstract: Embodiments of the invention describe apparatuses, systems, and methods of thermal management for photonic integrated circuits (PICs). Embodiments include a first device and a second device comprising including waveguides, wherein the first and second devices have different thermal operating conditions. A first region is adjacent to a waveguide of the first device, wherein its optical mode is to be substantially confined by the first region, and wherein the first region has a first thermal conductivity to dissipate heat based on the thermal operating condition of the first device. A second region is adjacent to a waveguide of the second device, wherein its optical mode is to be substantially confined by the second region, and wherein the second region has a second thermal conductivity to dissipate heat based on the thermal operating condition of the second device. In some embodiments, thermal cross talk is reduced without significantly affecting optical performance.

Abstract: Embodiments describe bi-directional AWGs comprising a first input waveguide coupled to a first free propagation region to input light into a dispersive waveguide array, a second input waveguide coupled to a second free propagation region to input light into the dispersive waveguide array, a first plurality of output waveguides coupled to the first free propagation region to output light from the dispersive waveguide array received from the second input waveguide, and a second plurality of output waveguides coupled to the second free propagation region to output light from the dispersive waveguide array received from the first input waveguide. At least one of these FPRs reduces potential crosstalk received at their respective output waveguides by having at least one of their input waveguides or plurality of output waveguides angled offset from a center of the dispersive waveguide array to attenuate carrier waves that can be present at the output waveguides.

Abstract: Embodiments of the invention describe apparatuses, systems, and methods of thermal management for photonic integrated circuits (PICs). Embodiments include a first device and a second device comprising including waveguides, wherein the first and second devices have different thermal operating conditions. A first region is adjacent to a waveguide of the first device, wherein its optical mode is to be substantially confined by the first region, and wherein the first region has a first thermal conductivity to dissipate heat based on the thermal operating condition of the first device. A second region is adjacent to a waveguide of the second device, wherein its optical mode is to be substantially confined by the second region, and wherein the second region has a second thermal conductivity to dissipate heat based on the thermal operating condition of the second device. In some embodiments, thermal cross talk is reduced without significantly affecting optical performance.

Abstract: Embodiments of the invention describe (M)MPICs, which include RF processing components and heterogeneous silicon photonic components that include a first region of silicon material and a second region of non-silicon material with high electro-optic efficiency (e.g., III-V material). Said heterogeneous silicon components are fabricated from the silicon and non-silicon material, and therefore may be interconnected via silicon/non-silicon waveguides formed from the above described regions of silicon/non-silicon material. The effect of interconnecting these components via said optical waveguides is that an RF signal may be processed using photonic components consistent with the size of an MMIC, without the need for any optical fibers; therefore, embodiments of the invention describe a chip scale microwave IC that has the broad optical bandwidth of photonics without any optical interfaces to fiber.

Abstract: Embodiments describe transceiver architectures to enable ‘loopback’ operation, thereby allowing or on-chip or intra module characterization of the transceiver. This includes but is not limited to tests such as bit error rate (BER) characterization, received power characterization and calibration of filters (MUX, DMUX etc.) present in the transceiver. Embodiments may also describe architectures for superimposing low-speed data on to the signal coming out of a transmitter, which in turn enables low frequency communication between network elements in the external link.

Abstract: Embodiments of the invention describe substrates, used to form optical devices, which include high thermal conductivity intermediate layers. Said substrates comprise a bulk layer, an optical device layer comprising a first material, and an intermediate layer disposed between the bulk layer and the device layer comprising a second material having a higher thermal conductivity and a lower index of refraction than the first material. In the resulting devices, said intermediate layer functions as part of the device layer structure—i.e., provides optical or electrical power dissipation (i.e. thermal) functionality for the device formed from said substrate. Thus, optical devices do not necessarily need to utilize an add-on packaging solution for heat absorption when formed from substrate stacks according to embodiments of the invention.

Abstract: Embodiments of the invention describe apparatuses, systems, and methods of thermal management for photonic integrated circuits (PICs). Embodiments include a first device and a second device comprising including waveguides, wherein the first and second devices have different thermal operating conditions. A first region is adjacent to a waveguide of the first device, wherein its optical mode is to be substantially confined by the first region, and wherein the first region has a first thermal conductivity to dissipate heat based on the thermal operating condition of the first device. A second region is adjacent to a waveguide of the second device, wherein its optical mode is to be substantially confined by the second region, and wherein the second region has a second thermal conductivity to dissipate heat based on the thermal operating condition of the second device. In some embodiments, thermal cross talk is reduced without significantly affecting optical performance.