Abstract: Methods, systems, and devices for memory cell biasing techniques are described. A memory cell may be accessed during an access phase of an access operation. A pre-charge phase of the access phase may be initiated. The memory cell may be biased to a voltage (e.g., a non-zero voltage) after the pre-charge phase. In some examples, the memory cell may be biased to the voltage when a word line is unbiased and the memory cell is isolated from the digit line.

Abstract: A clamping tool with tightening torque control includes a body containing control circuits and an electronic processing unit having at one end a handle for the grip of an operator who performs the tightening, and at the other end an arm. The arm at its free end includes a seat into which a plurality of inserts can alternatively be inserted, suitable for engaging the tool with a corresponding type and/or size of a mechanical member on which the tool is intended to act to perform a tightening operation. On the arm there is a sensor adapted to detect the tightening torque exerted on the mechanical member.

Abstract: Methods, systems, and devices for biasing a memory cell during a read operation are described. For example, a memory device may bias a memory cell to a first voltage (e.g., a read voltage) during an activation phase of a read operation. After biasing the memory cell to the first voltage, the memory device may bias the memory cell to a second voltage greater than the first voltage (e.g., a write voltage) during the activation phase of the read operation. After biasing the memory cell to the second voltage, the memory device may initiate a refresh phase of the read operation. Based on a value stored by the memory cell prior to biasing the memory cell to the first voltage, the memory device may initiate a precharge phase of the read operation.

Abstract: Methods, systems, and devices for biasing a memory cell during a read operation are described. For example, a memory device may bias a memory cell to a first voltage (e.g., a read voltage) during an activation phase of a read operation. After biasing the memory cell to the first voltage, the memory device may bias the memory cell to a second voltage greater than the first voltage (e.g., a write voltage) during the activation phase of the read operation. After biasing the memory cell to the second voltage, the memory device may initiate a refresh phase of the read operation. Based on a value stored by the memory cell prior to biasing the memory cell to the first voltage, the memory device may initiate a precharge phase of the read operation.

Abstract: A check valve for a pump delivery port includes a body having inlet and outlet portions joined by a duct and an opening; a curve having an inlet end to be connected to the delivery port and an outlet end to be connected to the body; and a valve member having a disk-shaped locking portion sealingly interacting with an edge of the curve and a locking portion secured in a seat by a lid of the opening. The valve member moves between open and closed positions and has a metal core made while the locking portion is metal-free. The lid cooperates with the locking portion through a protrusion or a cavity and pushes the valve member toward the curve to the closed position and allows the valve member to deflect to the open position under pressure of a working fluid in equilibrium with the weight of the blocking portion.

Abstract: Methods, systems, and devices for biasing techniques, such as open page biasing techniques, are described. A memory cell may be accessed during an access phase of an access operation, for example, an open page access operation. An activate pulse may be applied to the memory cell during the access phase. The memory cell may be biased to a non-zero voltage after applying the activate pulse and before a pre-charge phase. The pre-charge phase of the access phase may be initiated after biasing the memory cell to the non-zero voltage.

Abstract: Methods, systems, and devices for biasing a memory cell during a read operation are described. For example, a memory device may bias a memory cell to a first voltage (e.g., a read voltage) during an activation phase of a read operation. After biasing the memory cell to the first voltage, the memory device may bias the memory cell to a second voltage greater than the first voltage (e.g., a write voltage) during the activation phase of the read operation. After biasing the memory cell to the second voltage, the memory device may initiate a refresh phase of the read operation. Based on a value stored by the memory cell prior to biasing the memory cell to the first voltage, the memory device may initiate a precharge phase of the read operation.

Abstract: Methods, systems, and devices for memory cell biasing techniques are described. A memory cell may be accessed during an access phase of an access operation. A pre-charge phase of the access phase may be initiated. The memory cell may be biased to a voltage (e.g., a non-zero voltage) after the pre-charge phase. In some examples, the memory cell may be biased to the voltage when a word line is unbiased and the memory cell is isolated from the digit line.

Abstract: A check valve for a pump delivery port includes a body having inlet and outlet portions joined by a duct and an opening; a curve having an inlet end to be connected to the delivery port and an outlet end to be connected to the body; and a valve member having a disk-shaped locking portion sealingly interacting with an edge of the curve and a locking portion secured in a seat by a lid of the opening. The valve member moves between open and closed positions and has a metal core made while the locking portion is metal-free. The lid cooperates with the locking portion through a protrusion or a cavity and pushes the valve member toward the curve to the closed position and allows the valve member to deflect to the open position under pressure of a working fluid in equilibrium with the weight of the blocking portion.

Abstract: Methods, systems, and devices for biasing techniques, such as open page biasing techniques, are described. A memory cell may be accessed during an access phase of an access operation, for example, an open page access operation. An activate pulse may be applied to the memory cell during the access phase. The memory cell may be biased to a non-zero voltage after applying the activate pulse and before a pre-charge phase. The pre-charge phase of the access phase may be initiated after biasing the memory cell to the non-zero voltage.