Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

Abstract: There is provided pharmaceutical compositions for the treatment of e.g. opioid dependency comprising microparticles of a pharmacologically-effective amount of buprenorphine, or a pharmaceutically-acceptable salt thereof, in associative admixture with particles comprising a weak acid, or particles comprising weakly-acidic buffer forming materials. The composition may further comprise a disintegrant and/or particles of a pharmacologically-effective amount of naloxone, or a pharmaceutically-acceptable salt thereof. The compositions are useful in the treatment of opioid dependency/addiction and/or pain.

Abstract: A plasma processing system having at least one processing chamber comprising at least two sub-chambers is provided. The two plasma sub-chambers are in plasma flow or gas flow communication through a passage, which is controlled by a gate. The gate may be operated to allow plasma migration between the two sub-chambers to occur at different conductance rates. In one example, the gate comprises two plates with openings through the plates. At least one of the plates may be rotatable relative to the other plates to govern the conductance rate of the plasma from one sub-chamber to the other sub-chamber.

Abstract: A method is disclosed for testing a latching magnet of a switch including a switching contact, formed from contact elements mechanically separated from one another for opening the switching contact; an electronic trip unit, to monitor current flowing via the contact elements and to perform a test for a current-dependent trip condition; an electrical energy store, forming a circuit with the winding of the latching magnet, the circuit being closed for a first closing time when the trip condition of the trip unit is met; and an actuator, actuable by closing off the circuit and configured to separate the contact elements. For test purposes, the circuit is closed for a second closing time, which is so short that separation of the contact elements by the actuator does not take place. A test is then performed to ascertain whether there is a current flowing via the winding of the latching magnet.

Abstract: A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.

Abstract: An engine mount for a drive unit in a vehicle includes a bracket having first and second joining points for attachment of the bracket to the drive unit. A first mounting member connects the bracket to the drive unit in the first joining point along a first joining axis. An engine mount is arranged on a vehicle body and supports the drive unit via the bracket. A second mounting member connects the bracket to the drive unit in the second joining point along a second joining axis. The first and second joining axes extend at a slant to each other by an axis angle.

Abstract: A hitherto unknown crystalline form of (?)-(1R,2R)-3-(3-dimethylamino-1-ethyl-2-methylpropyl)-phenol hydrochloride, pharmaceutical compositions containing the new crystalline form, methods of producing the new crystalline form, and a related method of use including treatment of, e.g., pain and/or urinary incontinence.

Abstract: Disclosed are methods of adjusting the emission of vacuum ultraviolet (VUV) radiation from a plasma in a semiconductor processing chamber. The methods may include generating a plasma in the processing chamber which includes a VUV-emitter gas and a collisional energy absorber gas, and adjusting the emission of VUV radiation from the plasma by altering the concentration ratio of the VUV-emitter gas to collisional energy absorber gas in the plasma. In some embodiments, the VUV-emitter gas may be helium and the collisional energy absorber gas may be neon, and in certain such embodiments, adjusting VUV emission may include flowing helium and/or neon into the processing chamber in a proportion so as to alter the concentration ratio of helium to neon in the plasma. Also disclosed are apparatuses which implement the foregoing methods.

Abstract: A method for operating an air jet spinning machine having at least one spinning unit with one spinning nozzle for producing a yarn is provided. During the operation of the spinning unit, the spinning nozzle feeds a fiber composite through an inlet in a predefined transport direction. The fiber composite within a vortex chamber of the spinning nozzle receives a twist with the assistance of a vortex air flow, such that a yarn is formed from the fiber composite. With the assistance of at least one sensor system, the yarn leaving the outlet is monitored with regard to defined yarn flaws. The production of yarn is interrupted upon the detection of a corresponding yarn flaw. Between the detection of the specified yarn flaw and the interruption of the yarn production, a cleaning process is carried out during which an additive is fed to the spinning unit and is applied to the fiber composite and/or the yarn produced from the fiber composite and/or on parts of the spinning nozzle.

Abstract: A spinning unit is provided for an air jet spinning machine with a spinning nozzle used to manufacture yarn from a fiber strand. The spinning nozzle has an inlet for the fiber strand, a vortex chamber, a yarn forming element protruding into the vortex chamber, and a draw-off channel for the yarn. An additive supply is assigned to the spinning nozzle and designed so that the spinning nozzle is supplied with an additive. The yarn forming element has at least one additive duct that ends in the vortex chamber or the draw-off channel. The additive supply encompasses an additive supply line connected to the additive duct so that an additive introduced into the additive duct via the additive supply line can be introduced into the draw-off channel and/or the vortex chamber. A process for operating an air jet spinning machine with at least one spinning unit is provided. An additive is added, at least intermittently, to the spinning nozzle of the spinning unit while it is operating with the help of an additive supply.

Abstract: A method is provided to operate an air jet spinning machine, having at least one spinning unit with a spinning nozzle for manufacturing yarn, in which a fiber strand is fed to the spinning nozzle through an inlet and is imparted a twist inside a vortex chamber of the spinning nozzle by means of a swirled air current so that a yarn is formed from the fiber strand. An additive is added with an additive dispenser to the spinning unit while the air jet spinning machine is operating and applied on the fiber strand or on sections of the spinning nozzle and/or the yarn. At least one physical parameter of the yarn is monitored by a sensor system wherein, based on a measured value supplied by the sensor system correlated with the parameter, it is determined whether and/or how much additive was applied.

Abstract: Crystalline, anhydrous hydrochloride salts of 4,5?-epoxy-3,14-dihydroxy-17-methylmorphinan-6-one (oxymorphone) are disclosed and three polymorphic forms of these salts are reported. The invention further relates to a method for the production of such salts, a pharmaceutical composition comprising an effective amount of such a salt as a medicament and for the treatment and/or prevention of pain.

Abstract: Disclosed are methods of adjusting the emission of vacuum ultraviolet (VUV) radiation from a plasma in a semiconductor processing chamber. The methods may include generating a plasma in the processing chamber which includes a VUV-emitter gas and a collisional energy absorber gas, and adjusting the emission of VUV radiation from the plasma by altering the concentration ratio of the VUV-emitter gas to collisional energy absorber gas in the plasma. In some embodiments, the VUV-emitter gas may be helium and the collisional energy absorber gas may be neon, and in certain such embodiments, adjusting VUV emission may include flowing helium and/or neon into the processing chamber in a proportion so as to alter the concentration ratio of helium to neon in the plasma. Also disclosed are apparatuses which implement the foregoing methods.

Abstract: A cleaning device for cleaning an atomizer, in particular a rotary atomizer, is provided. The cleaning device includes a wet cleaning station having at least one cleaning nozzle for the wet cleaning of the atomizer with a cleaning fluid. The atomizer is introduced into the wet cleaning station in an introduction direction. The cleaning nozzle has a rotatable cleaning trunk for dispensing the cleaning fluid. The cleaning device, in some embodiments, also includes a dry cleaning station. A corresponding operating method is also provided.

Abstract: A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

Abstract: A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.

Abstract: In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.

Abstract: There is provided pharmaceutical compositions for the treatment of e.g. opioid dependency comprising microparticles of a pharmacologically-effective amount of buprenorphine, or a pharmaceutically-acceptable salt thereof, in associative admixture with particles comprising a weak acid, or particles comprising weakly-acidic buffer forming materials. The composition may further comprise a disintegrant and/or particles of a pharmacologically-effective amount of naloxone, or a pharmaceutically-acceptable salt thereof. The compositions are useful in the treatment of opioid dependency/addiction and/or pain.

Abstract: A processing chamber having a chamber housing with a top and sidewalls is provided. The processing chamber has a seal for connecting the sidewalls of the chamber housing to a top of a lower chamber below the processing chamber. A substrate holder is attached to the sidewalls of the chamber housing. Further, a wafer lift ring supported by a side arm extending through the sidewalls has at least three posts each having at least one finger, the top of the fingers defining a first wafer handoff plane. The lower chamber has at least one lowest wafer support that defines a second wafer handoff plane where the height between the first wafer handoff plane and the second wafer handoff plane is not greater than a maximum vertical stroke of a transfer arm that is configured to transfer a wafer from the first wafer handoff plane and the second wafer handoff plane.