Abstract: A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer includes applying thermal energy to effect desorption of the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.

Abstract: Method and apparatus are provided for calibration or verification of accuracy specification of a computed tomographic system. In one embodiment, the apparatus can include a base structure, a first set of test objects arranged along a first axis and coupled to the base structure, and a second set of test objects arranged along a second axis and coupled to the base structure. The first set of test objects and the second set of test objects have a first geometry. The apparatus can also include a third set of test objects and a fourth set of test objects. The third set of test objects, and the fourth set of test objects have a second geometry different from the first geometry. Locations of the first, second third and fourth set of test objects are spatially fixed with respect to the base structure. The apparatus is a test specimen adapted for calibration or accuracy verification of computed tomography system.

Abstract: Stationary exercise equipment for physical training, more particularly an exercise bike, comprising a frame with a movement unit which either is to be moved by the exerciser or is itself driven and interacts with the exerciser, one or more sensors, assigned to the movement unit and/or the exerciser, for capturing measured values, and a computer apparatus for establishing one or more items of measurement-value-related information, which are output on a frame-side display apparatus, letterized in that provision is made for a first display apparatus, which is directed at the exerciser for displaying one or more items of information, and in that provision is made for a second display apparatus, which is directed at the opposite side for outputting at least one item of information.

Abstract: Etch in a thermal etch reaction is predicted using a machine learning model. Chemical characteristics of an etch process and associated energies in one or more reaction pathways of a given thermal etch reaction are identified using a quantum mechanical simulation. Labels indicative of etch characteristics may be associated with the chemical characteristics and associated energies of the given thermal etch reaction. The machine learning model can be trained using chemical characteristics and associated energies as independent variables and labels as dependent variables across many different etch reactions of different types. When chemical characteristics and associated energies for a new thermal etch reaction are provided as inputs in the machine learning model, the machine learning model can accurately predict etch characteristics of the new thermal etch reaction as outputs.

Abstract: Various exemplary illustrations of an electrode assembly for an electrostatic atomizer, for example for a rotation atomizer, and exemplary methods of making and/or using the same, are disclosed. An exemplary electrode assembly may not include an electrode holder arrangement for holding at least one electrode creating an electrostatic field about a symmetrical axis, wherein there is dielectric material for influencing a discharge current component extending in the direction of the symmetrical axis.

Abstract: Method and apparatus are provided for calibration or verification of accuracy specification of a computed tomographic system. In one embodiment, the apparatus can include a base structure, a first set of test objects arranged along a first axis and coupled to the base structure, and a second set of test objects arranged along a second axis and coupled to the base structure. The first set of test objects and the second set of test objects have a first geometry. The apparatus can also include a third set of test objects and a fourth set of test objects. The third set of test objects, and the fourth set of test objects have a second geometry different from the first geometry. Locations of the first, second third and fourth set of test objects are spatially fixed with respect to the base structure. The apparatus is a test specimen adapted for calibration or accuracy verification of computed tomography system.

Abstract: A cleaning device for cleaning an atomizer, in particular a rotary atomizer, is provided. The cleaning device includes a wet cleaning station having at least one cleaning nozzle for the wet cleaning of the atomizer with a cleaning fluid. The atomizer is introduced into the wet cleaning station in an introduction direction. The cleaning nozzle has a rotatable cleaning trunk for dispensing the cleaning fluid. The cleaning device, in some embodiments, also includes a dry cleaning station. A corresponding operating method is also provided.

Abstract: Apparatus for use with a vessel used to generate plasma are provided. One apparatus includes a first comb structure configured to partially wrap around a circumference of the vessel. The first comb structure has a first end and a second end, and a first separation is defined between the first end and the second end. The first comb structure defines a first plurality of fingers oriented perpendicular to the circumference of the vessel. The first comb structure is configured to be connected to a first end of a radio frequency (RF) coil. Also provided is a second comb structure configured to partially wrap around the circumference of the vessel. The second comb structure has a first end and a second end. A second separation is defined between the first end and the second end the second comb structure. The second comb structure defines a second plurality of fingers oriented perpendicular to the circumference of the vessel. The second comb structure is configured to be connected to a second end of the RF coil.

Abstract: A method for etching a metal oxide layer on a semiconductor substrate, comprising providing a plurality of cycles, is provided. Each cycle comprises exposing the metal oxide layer to a reactive hydrogen-containing gas or plasma to transform a part of the metal oxide layer into a layer of metal hydride, stopping the exposing the metal oxide layer to the reactive hydrogen-containing gas or plasma, heating the layer of metal hydride to at least a sublimation temperature to sublime the layer of metal hydride, and cooling the metal oxide layer to a temperature below the sublimation temperature.

Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

Abstract: A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer includes applying thermal energy to effect desorption of the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.

Abstract: The present invention relates to a support structure for a rucksack, including a support framework having a first and a second bearing point arranged at a spacing from one another along a first direction, and a first and a second rotation element. The first rotation element is mounted on the support framework at the first bearing point and is rotatable about a first rotation axis and the second rotation element is mounted on the support framework at the second bearing point and is rotatable about a further rotation axis. The first and second rotation elements are constructed for receiving a shoulder belt and hip belt, respectively, in a torsion-resistant manner. The first and the second rotation element are rotationally coupled to one another in a manner reversing the direction of rotation.

Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

Abstract: An apparatus for processing wafer-shaped articles comprises a vacuum transfer module and an atmospheric transfer module. A first airlock interconnects the vacuum transfer module and the atmospheric transfer module. An atmospheric process module is connected to the atmospheric transfer module. A gas supply system is configured to supply gas separately and at different controlled flows to each of the atmospheric transfer module, the first airlock and the atmospheric process module, so as to cause: (i) a flow of gas from the first airlock to the atmospheric transfer module when the first airlock and the atmospheric transfer module are open to one another, and (ii) a flow of gas from the atmospheric transfer module to the atmospheric process module when the atmospheric transfer module and the atmospheric process module are open to one another.

Abstract: A method for etching a metal oxide layer on a semiconductor substrate, comprising providing a plurality of cycles, is provided. Each cycle comprises exposing the metal oxide layer to a reactive hydrogen-containing gas or plasma to transform a part of the metal oxide layer into a layer of metal hydride, stopping the exposing the metal oxide layer to the reactive hydrogen-containing gas or plasma, heating the layer of metal hydride to at least a sublimation temperature to sublime the layer of metal hydride, and cooling the metal oxide layer to a temperature below the sublimation temperature.

Abstract: A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer is effected via a ligand exchange reaction that is configured to volatilize the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.

Abstract: A hitherto unknown crystalline form of (-)-(1R,2R)-3-(3-dimethylamino-1-ethyl-2-methylpropyl)-phenol hydrochloride, pharmaceutical compositions containing the new crystalline form, methods of producing the new crystalline form, and a related method of use including treatment of, e.g., pain and/or urinary incontinence.

Abstract: There is provided pharmaceutical compositions for the treatment of e.g. opioid dependency comprising microparticles of a pharmacologically-effective amount of buprenorphine, or a pharmaceutically-acceptable salt thereof, in associative admixture with particles comprising a weak acid, or particles comprising weakly-acidic buffer forming materials. The composition may further comprise a disintegrant and/or particles of a pharmacologically-effective amount of naloxone, or a pharmaceutically-acceptable salt thereof. The compositions are useful in the treatment of opioid dependency/addiction and/or pain.

Abstract: The invention on hand pertains to a method for allocating at least one digital memory location to a physical information carrier, wherein, using at least one application executed on a portable processing unit, the at least one memory location is requested on a server via a communication interface connected to the at least one portable processing unit, and wherein, via the server, the at least one memory location is allocated a unique identifier, and wherein the unique identifier is allocated at least one pattern (23) that is to be applied manually to a surface of the physical information carrier, and wherein the at least one pattern (23) is applied by a user manually to the surface of the physical information carrier, whereby the at least one memory location on the server is connected to the physical information carrier, and wherein, if the at least one pattern (23) is captured using at least one sensor of the at least one processing unit, the allocation of the at least one memory location is downloaded from

Abstract: A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer is effected via a ligand exchange reaction that is configured to volatilize the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.