Abstract: Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence.

Abstract: A method for fabricating a gate dielectric of a field effect transistor is provided. In one embodiment, the method includes removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, forming an oxide layer over the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. In one embodiment, the oxide layer on the substrate is formed by depositing the oxide layer, and the oxide layer on the gate dielectric layer is formed by oxidizing at least a portion of the gate dielectric layer using an oxygen-containing plasma. In another embodiment, the oxide layer on the gate dielectric layer is formed by forming a thermal oxide layer, i.e., depositing the oxide layer on the gate dielectric layer.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract: A method of adjusting the heat transfer properties within a processing chamber is presented. Chamber properties may be determined and adjusted by adjusting the thermal mass of an edge ring disposed in the processing chamber.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract: A thermal processing system and method including scanning a line beam of intense radiation in a direction transverse to the line direction for thermally processing a wafer with a localized effectively pulsed beam of radiant energy. The thickness of the wafer is two-dimensionally mapped and the map is used to control the degree of thermal processing, for example, the intensity of radiation in the line beam to increase the uniformity. The processing may include selective etching of a pre-existing layer or depositing more material by chemical vapor deposition.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract: A rate monitor connected to a single-wafer cleaning device to measure and control a wet cleaning process. During the wafer cleaning process the rate monitor can monitor a rate at which changes are being made to a portion of the wafer, as the wafer is covered with a liquid, and predict an endpoint in time to the wet cleaning process.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract: A semiconductor processing system includes a process chamber and an assembly of radiant energy sources. The radiant energy assembly is filled with a thermally conductive gas to cool the radiant energy sources.

Abstract: A novel apparatus and method of making the apparatus for supporting a substrate during processing. A base defining grooves at a substrate support location is described. Grooves are provided to catch wear particles from the substrate caused by friction during relative movement between the substrate and the support. A plurality of substrate support locations can be provided on the base surface. The base surface preferably comprises an annulus with substrate support locations spaced circumferentially around the annulus. Protrusions may be provided at substrate support locations. The protrusions define contact surfaces on which grooves can be formed.

Abstract: A semiconductor processing system includes a semiconductor processing chamber, a heat source assembly and a window. The window is located over an opening into a main body of the chamber. The heat source assembly is evacuable to alter the pressure differential across the window.

Abstract: An apparatus accurately measures a temperature of a substrate in a thermal processing chamber. The apparatus has a support structure to support the substrate within the thermal processing chamber. A first probe is provided with an input end positioned to receive radiation from the substrate during thermal processing. A second probe is also provided with an input end positioned to receive radiation from the substrate during thermal processing. The second probe is positioned such that it is angularly offset from the first probe so radiation provided at an output end of the second probe is out of phase with radiation provided at the output end of the first probe. A junction receives and combines radiation from the output ends of the first and second probes. The radiation is combined to provide an accurate representation of the temperature of a local region of the substrate by compensating for a temperature gradient between the support structure and the substrate.

Abstract: A glass matrix/ceramic fiber reinforcement composite is prepared from a yarn formed by spinning glass fiber and ceramic fibers lengths together, to form a bicomponent yarn. The yarn is weavable and spinnable, and accordingly may be prepared in fabric forms, or in windings, of predetermined shape. The precursor is melted by heating to the temperature of the melting point of glass, which fused the glass into a continuous matrix, surrounding the ceramic reinforcement.

Abstract: A woven core structure (2) includes a first and second face sheets (4, 6) with inner surfaces (16, 18) facing one another. First and second sets of corrugated ribbons (8, 10) are positioned between the face sheets. The ribbons have nodes (12, 14) which are secured to the inner surfaces of the face sheets. The first set of ribbons extend transversely to, and preferably perpendicular to the second set of ribbons. The first and second sets of ribbons are woven such that the nodes of the first set of ribbons are spaced apart from and generally opposite the nodes of the second set of ribbons. This arrangement permits an increase in the node contact area (26) between the nodes and the face sheets to enhance the bond strength between the ribbons and the face sheets and to increase the skin deformation strength of the structure. The angle between the ribbons and the face sheets can be adjusted to optimize shear strength versus tension/compression strength.

Abstract: Fiber-reinforced ceramic honeycomb is prepared by impregnating a high-temperature fiber, notably fibers of ceramic materials such as silicates, aluminosilicates, aluminates and silicon carbides, with a liquid solution or suspension of a ceramic precursor material, followed by forming the impreganted fiber into corrugated strips, assembling the strips into the honeycomb structure, then heating the strips to form the ceramic. Multiple impregnations with intervening heating are useful in controlling the density and quality of the product.

Abstract: A ceramic body of controlled porosity is formed by coating unidirectional fiber carriers with a hardenable liquid resin bearing powdered ceramic material, which resin is subsequently cured, hardened, or cooled to provide a green body which may be assembled with similar layers, in a desired shape, and subsequently sintered, to form a ceramic body having continuous pores corresponding to the position of the fibers.

Abstract: A plasma reactor is described in which radially outward and radially inward gas flows are adjusted to maintain uniformity for different wafer sizes and to compensate for loading effects. Inlet ports are provided about the sides of a reactor chamber and at a central position in the top of the chamber, the latter being provided with a flared, tubular structure. Exhaust ports are located about the sides of the chamber. The gas flow from the side inlet ports may have a tangential component.

Abstract: A plasma reactor and a process for operating a plasma reactor are disclosed. The reactor comprises parallel plates in which one plate is connected to a source of high frequency signal and a second plate is connected to a source of low frequency signal. Control apparatus modulates one or both signals. In the process, the duty cycles of the modulating signals is controlled so that the signals overlap during at least a portion of their cycles.