Abstract: The invention relates to a method for a chemical and/or electrolytic surface treatment of a substrate in a process station and a process station for a chemical and/or electrolytic surface treatment of a substrate.

Abstract: The invention relates to a distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate, a distribution method for a process fluid for chemical and/or electrolytic surface treatment of a substrate and a data processing device. The distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate comprises a distribution body and a shield element. The distribution body comprises a plurality of openings for the process fluid. The shield element is configured to at least partially cover at least one of the plurality of openings to limit a flow of the process fluid through the distribution body.

Abstract: The invention relates to an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate, a module for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a use of the electrochemical deposition system or the module for chemical and/or electrolytic surface treatment for a metal deposition application and a manufacturing method for an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate. The electrochemical deposition system comprises an anode, an anode enclosure, and a single electrolyte. The anode enclosure extends at least partially around the anode. The anode enclosure comprises a membrane. The anode and the anode enclosure are arranged in the single electrolyte. The single electrolyte is the only electrolyte of the electrochemical deposition system.

Abstract: The invention relates to a substrate holding and locking system for chemical and/or electrolytic surface treatment of a substrate in a process fluid and a corresponding method. The system comprises a first element, a second element, a reduced pressure holding unit and a magnetic locking unit. The first element and the second element are configured to hold the substrate between each other. The reduced pressure holding unit comprises a pump to reduce an interior pressure inside the substrate holding and locking system below atmospheric pressure. The magnetic locking unit is configured to lock the first element and the second element with each other. The magnetic locking unit comprises a magnet control and at least a magnet. The magnet is arranged at one of the first element and the second element. The magnet control is configured to control a magnetic force between the first element and the second element.

Abstract: Exemplary substrate locking system, device, apparatus and method for chemical and/or electrolytic surface treatment of a substrate in a process fluid can be provided. For example, it is possible to provide a first element, a second element and a locking unit. The first element and the second element can be configured to hold the substrate between each other. The locking unit can be configured to lock the first element and the second element with each other. The locking unit can comprise a magnet control device and a magnet. The magnet can be arranged at or near the first element and/or the second element. The magnet control device can be configured to control a magnetic force between the first element and the second element.

Abstract: The invention relates to a distribution body for a process fluid for chemical and/or electrolytic surface treatment of a substrate, a distribution system for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a use of a distribution body or a distribution system for a chemical and/or electrolytic surface treatment of a substrate in a process fluid and a distribution method for a process fluid for chemical and/or electrolytic surface treatment of a substrate. The distribution body comprises: a front face, a rear face, at least an inlet, an outlet array, and a flow control array. The front face is configured to be directed towards the substrate for the surface treatment of the substrate. The rear face is arranged opposite to the front face. The inlet is configured for an entry of the process fluid into the distribution body. The outlet array comprises several outlets, which are configured for an exit of the process fluid out of the distribution body and towards the substrate.

Abstract: The present disclosure relates to a distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate, a device for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a use of the distribution system, and a method for manufacturing the distribution system. The distribution system comprises: a first distribution body, a substitute body, and a framework. The first distribution body is configured to direct a flow of the process fluid and/or an electrical current to the substrate. The first distribution body and the substitute body are arranged to insert the substrate between them. The framework is configured to mount the first distribution body and the substitute body relative to each other. The framework is further configured to form, together with the first distribution body and the substitute body, a casing surrounding the substrate.

Abstract: The invention relates to a substrate handling device for a wafer, a substrate handling system for a wafer and a method for substrate handling. The substrate handling device comprises: —an end effector, —a straightening ring, and —a suction cup. The suction cup is arranged within the straightening ring. At least the straightening ring is releasably attached to the end effector. A first part of the suction cup is connectable to a vacuum supply and a second part of the suction cup is attachable to a substrate by means of reduced pressure provided by the vacuum supply. The suction cup projects from the straightening ring in a normal pressure state. The suction cup is on the same level as the straightening ring in a reduced pressure state, in which the substrate is held by the suction cup, so that the straightening ring contacts the substrate.

Abstract: The teaching relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate includes the following: a) Providing a substrate with a substrate surface comprising at least one recess, b) applying a replacement gas to the recess to replace an amount of ambient gas in the recess to at least partially clear the recess from the ambient gas, c) applying a processing fluid to the recess, wherein the replacement gas dissolves in the processing fluid to at least partially clear the recess from the replacement gas, and d) plating the recess.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.

Abstract: The invention relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate comprises the following steps: a) Providing a substrate with a substrate surface comprising at least one recess, b) applying a replacement gas to the recess to replace an amount of ambient gas in the recess to at least partially clear the recess from the ambient gas, c) applying a processing fluid to the recess, wherein the replacement gas dissolves in the processing fluid to at least partially clear the recess from the replacement gas, and d) plating the recess.

Abstract: Exemplary substrate locking system, device, apparatus and method for chemical and/or electrolytic surface treatment of a substrate in a process fluid can be provided. For example, it is possible to provide a first element, a second element and a locking unit. The first element and the second element can be configured to hold the substrate between each other. The locking unit can be configured to lock the first element and the second element with each other. The locking unit can comprise a magnet control device and a magnet. The magnet can be arranged at or near the first element and/or the second element. The magnet control device can be configured to control a magnetic force between the first element and the second element.

Abstract: An exemplary distribution system, apparatus and method can be provide for chemical and/or electrolytic surface treatment of a substrate in a process fluid. The distribution system can comprise a distribution body and a control unit. The distribution body can be configured to direct a flow of the process fluid and/or an electrical current to the substrate. The distribution body can comprise at least a first distribution element and a second distribution element. The control unit/device can be configured to control the first distribution element and the second distribution element separately from one another.

Abstract: Exemplary substrate locking system, device, apparatus and method for chemical and/or electrolytic surface treatment of a substrate in a process fluid can be provided. For example, it is possible to provide a first element, a second element and a locking unit. The first element and the second element can be configured to hold the substrate between each other. The locking unit can be configured to lock the first element and the second element with each other. The locking unit can comprise a magnet control device and a magnet. The magnet can be arranged at or near the first element and/or the second element. The magnet control device can be configured to control a magnetic force between the first element and the second element.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.

Abstract: The invention relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate comprises the following steps: a) Providing a substrate with a substrate surface comprising at least one recess, b) applying a replacement gas to the recess to replace an amount of ambient gas in the recess to at least partially clear the recess from the ambient gas, c) applying a processing fluid to the recess, wherein the replacement gas dissolves in the processing fluid to at least partially clear the recess from the replacement gas, and d) plating the recess.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber. The closed process chamber comprises a housing providing a gas-tight enclosure, a rotary chuck located within the closed process chamber and adapted to hold a wafer shaped article thereon, and an interior cover disposed within said closed process chamber. The interior cover is movable between a first position in which the rotary chuck communicates with an outer wall of the closed process chamber, and a second position in which the interior cover seals against an inner surface of the closed process chamber adjacent the rotary chuck to define a gas-tight inner process chamber.

Abstract: Exemplary substrate locking system, device, apparatus and method for chemical and/or electrolytic surface treatment of a substrate in a process fluid can be provided. For example, it is possible to provide a first element, a second element and a locking unit. The first element and the second element can be configured to hold the substrate between each other. The locking unit can be configured to lock the first element and the second element with each other. The locking unit can comprise a magnet control device and a magnet. The magnet can be arranged at or near the first element and/or the second element. The magnet control device can be configured to control a magnetic force between the first element and the second element.

Abstract: An apparatus for processing wafer-shaped articles comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, and a rotating shower head for supplying process gas to a surface of a wafer-shaped article when held by the spin chuck. The rotating shower head comprises an outlet plate having plural openings formed in each of a central and a peripheral region thereof. A process gas feed is provided so as to supply process gas to a gas distribution chamber. The gas distribution chamber is in fluid communication with a plurality of openings formed in the shower head.