Abstract: In an apparatus for treating a wafer-shaped article, a spin chuck is configured to hold a wafer-shaped article of a predetermined diameter. A non-rotating plate is positioned relative to the spin chuck such that the non-rotating plate is beneath and parallel to a wafer-shaped article when positioned on the spin chuck. A fluid dispensing nozzle passes through the non-rotating plate and terminates in a discharge end positioned above and adjacent to the non-rotating plate. The discharge end comprises a horizontal gas discharge nozzle configured to distribute gas radially outwardly across an upper surface of the non-rotating plate.

Abstract: An apparatus for processing wafer-shaped articles, comprises a process chamber, and a spin chuck positioned inside the process chamber. The spin chuck is configured to hold a wafer-shaped article at a predetermined process position. A plate covers the spin chuck and is affixed to or formed integrally with the spin chuck for rotation therewith, the plate having a central opening. A nozzle assembly extends into the process chamber such that a discharge end of the nozzle assembly passes through the central opening of the plate to define a gap between the plate and the nozzle assembly, the gap extending from an upper inlet end to a lower outlet end. The nozzle assembly comprises at least one side nozzle positioned to direct a gas flow adjacent to the gap and upstream of the lower outlet end, and configured to generate a reduced pressure at a position upstream of the lower outlet end of the gap, thereby to control gas flow through the gap from the upper inlet end toward the lower outlet end.

Abstract: An apparatus for processing wafer-shaped articles comprises a process chamber and a spin chuck positioned inside the process chamber. The spin chuck is configured to hold a wafer-shaped article at a predetermined process position. A nozzle assembly extends into the process chamber such that a discharge end of the nozzle assembly faces the predetermined process position. The nozzle assembly is equipped with a heater that heats portions of the nozzle assembly located within the process chamber. Such heating may be performed, for example, to promote evaporation of liquid droplets from the nozzle assembly.

Abstract: In a method and apparatus for processing wafer-shaped articles, a spin chuck is positioned inside a process chamber. The spin chuck is configured to hold a wafer-shaped article at a predetermined process position. A cover covers the spin chuck and is affixed to or integral with the spin chuck for rotation therewith. The cover has a central opening. A stationary nozzle assembly extends into the process chamber such that a discharge end of the stationary nozzle assembly passes through the central opening of the cover. The nozzle assembly comprises a rinse nozzle configured to direct rinse liquid radially outwardly of the nozzle assembly onto a downwardly-facing surface of the cover.

Abstract: An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, the rotary chuck being adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber, the lid comprising an upper plate formed from a composite fiber-reinforced material and a lower plate that faces into the process chamber and is formed from a chemically-resistant plastic.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure, and a rotary chuck located within the closed process chamber. The closed process chamber comprises an annular duct surrounding the rotary chuck and extending along a first direction radially outwardly of the rotary chuck and obliquely to a rotary axis of the rotary chuck, from an inlet end that communicates with the rotary chuck to an outlet end that communicates with an exhaust duct. The annular duct comprises a duct section extending between the inlet and outlet ends that is defined by an inner chamber wall spaced apart from an outer chamber wall. The extent of the duct section along the first direction is at least twice a spacing of the inner and outer chamber walls throughout the duct section, as measured in a direction perpendicular to the first direction.

Abstract: A rotary chuck for processing wafer-shaped articles comprises a chuck body having a series of gripping pins that are movable by sliding horizontally and in unison relative to the chuck body from a first position in which the gripping pins are relatively more retracted into the chuck body to a second position in which the gripping pins are relatively more extended from the chuck body and in which the gripping pins are positioned so as to support a wafer-shaped article of a predetermined diameter.

Abstract: A device for processing wafer-shaped articles comprises a rotary chuck having a series of pins adapted to hold a wafer shaped article on the rotary chuck. Each of the pins comprises a cylindrical body and a projecting gripping portion formed integrally therewith. The cylindrical body and gripping portion are made from a ceramic material. The gripping portion comprises cylindrical surfaces having a common generatrix with surfaces of the cylindrical body.

Abstract: An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, and is adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber. The lid comprises an annular chamber, gas inlets communicating with the annular chamber and opening on a surface of the lid facing outwardly of the closed process chamber, and gas outlets communicating with the annular chamber and opening on a surface of the lid facing inwardly of the closed process chamber.

Abstract: A device and method for processing wafer-shaped articles comprises a process chamber and a rotary chuck located within the process chamber. The rotary chuck is adapted to be driven without physical contact through a magnetic bearing. The rotary chuck comprises a series of gripping pins adapted to hold a wafer shaped article in a position depending downwardly from the rotary chuck. The rotary chuck further comprises a plate that rotates together with the rotary chuck. The plate is positioned above an area occupied by the wafer-shaped article, and shields upper surfaces of the process chamber from liquids flung off of a wafer-shaped article during use of the rotary chuck.

Abstract: A device for holding a wafer-shaped article comprises an annular chuck base body having a plurality of movable contact elements for securing a wafer-shaped article to the annular chuck base body, and a gear mechanism driving the contact elements in unison between a first position and a second position. The annular chuck base body comprises a housing formed from a material that is resistant to attack by strong inorganic acids. The annular chuck base body also comprises a reinforcing ring fitted within the housing and formed from a material whose coefficient of linear thermal expansion is substantially less than that of the housing material.

Abstract: An apparatus for processing wafer-shaped articles comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, and a rotating shower head for supplying process gas to a surface of a wafer-shaped article when held by the spin chuck. The rotating shower head comprises an outlet plate having plural openings formed in each of a central and a peripheral region thereof. A process gas feed is provided so as to supply process gas to a gas distribution chamber. The gas distribution chamber is in fluid communication with a plurality of openings formed in the shower head.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber. The closed process chamber comprises a housing providing a gas-tight enclosure, a rotary chuck located within the closed process chamber and adapted to hold a wafer shaped article thereon, and an interior cover disposed within said closed process chamber. The interior cover is movable between a first position in which the rotary chuck communicates with an outer wall of the closed process chamber, and a second position in which the interior cover seals against an inner surface of the closed process chamber adjacent the rotary chuck to define a gas-tight inner process chamber.

Abstract: An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, and is adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber. The lid comprises an annular chamber, gas inlets communicating with the annular chamber and opening on a surface of the lid facing outwardly of the closed process chamber, and gas outlets communicating with the annular chamber and opening on a surface of the lid facing inwardly of the closed process chamber.

Abstract: An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, the rotary chuck being adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber, the lid comprising an upper plate formed from a composite fiber-reinforced material and a lower plate that faces into the process chamber and is formed from a chemically-resistant plastic.

Abstract: A method and device for processing wafer-shaped articles comprises a closed process chamber. A rotary chuck is located within the process chamber, and is adapted to hold a wafer shaped article thereon. An interior fluid distribution ring is positioned above the rotary chuck, and comprises an annular surface inclined downwardly from a radially inner edge to a radially outer edge thereof. At least one fluid distribution nozzle extends into the closed process chamber and is positioned so as to discharge fluid onto the annular surface of the fluid distribution ring.

Abstract: A device for holding a wafer-shaped article comprises an annular chuck base body having a plurality of movable contact elements for securing a wafer-shaped article to the annular chuck base body, and a gear mechanism driving the contact elements in unison between a first position and a second position. The annular chuck base body comprises a housing formed from a material that is resistant to attack by strong inorganic acids. The annular chuck base body also comprises a reinforcing ring fitted within the housing and formed from a material whose coefficient of linear thermal expansion is substantially less than that of the housing material.

Abstract: An apparatus for liquid treatment of substrates, comprises a substrate holder and a liquid collector surrounding the substrate holder. The liquid collector comprises a trough for collecting liquid that has been used to treat a substrate. The trough is in fluid communication with a discharge conduit, and the liquid collector further comprising a recessed surface extending from a discharge opening in the trough to an inlet opening of the discharge conduit that is positioned lower than the trough. The discharge opening in the trough has a cross-sectional area that is at least twice as large in cross sectional area than the inlet opening of the discharge conduit.

Abstract: A device and method for treating the surface of a semiconductor wafer provides a treatment fluid in the form of a dispersion of gas bubbles in a treatment liquid generated at acoustic pressures less than those required to induce cavitation in the treatment liquid. A resonator supplies ultrasonic or megasonic energy to the treatment fluid and is configured to create an interference pattern in the treatment fluid comprising regions of pressure amplitude minima and maxima at an interface of the treatment fluid and the semiconductor wafer. The resonator is mounted in the space between the rotary chuck body and a wafer carried in rotation with the chuck body; however, the resonator itself is stationary in relation to rotation of the wafer and chuck body.