Abstract: Techniques for reducing the specific contact resistance of metal—semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal—group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.

Abstract: A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.

Abstract: A rotatable connection for a mount device for placement in an operating room includes an adjustable stopping mechanism that can be disposed between a first connection component and a second connection component that is mounted rotatably relative to the first connection component about an axis of rotation. The adjustable stopping mechanism may be adapted to establish at least two different relative rotational angles of the connection components relative to one another or at least two different rotation ranges. The adjustable stopping mechanism includes a rotation lock that can be disposed non-rotatingly at the first connection component and a coupling part that can be disposed non-rotatingly at the second connection component and that has a form-locking contour for establishing individual rotational angle positions, and may include a stopping device with an integral stop. The stopping device may be non-rotatingly positionable. A support system or mount device are also provided.

Abstract: A rotatable connection for a stand apparatus to be arranged in an operating room and including an adaptable stop mechanism which can be arranged between a first connection component and a second connection component mounted rotatably around a rotational axis relative to the first connection component and is configured to define at least two different relative rotational angles of the connection components or at least two different rotational ranges is provided. A carrier system or a stand apparatus having such a rotatable connection is also provided.

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract: A rotatable connection for a stand apparatus to be arranged in an operating room and including an adaptable stop mechanism which can be arranged between a first connection component and a second connection component mounted rotatably around a rotational axis relative to the first connection component and is configured to define at least two different relative rotational angles of the connection components or at least two different rotational ranges is provided. A carrier system or a stand apparatus having such a rotatable connection is also provided.

Abstract: A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.

Abstract: A rotatable connection for a mount device for placement in an operating room includes an adjustable stopping mechanism that can be disposed between a first connection component and a second connection component that is mounted rotatably relative to the first connection component about an axis of rotation. The adjustable stopping mechanism may be adapted to establish at least two different relative rotational angles of the connection components relative to one another or at least two different rotation ranges. The adjustable stopping mechanism includes a rotation lock that can be disposed non-rotatingly at the first connection component and a coupling part that can be disposed non-rotatingly at the second connection component and that has a form-locking contour for establishing individual rotational angle positions, and may include a stopping device with an integral stop. The stopping device may be non-rotatingly positionable. A support system or mount device are also provided.

Abstract: An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10?5-10?7 ?-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×1019 cm?3 and less than approximately 10?8 ?-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 1020 cm?3.

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract: A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.

Abstract: An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10?5-10?7 ?-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×1019 cm?3 and less than approximately 10?8 ?-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 1020 cm?3.

Abstract: A securing element for securing a spindle in a bushing, in particular for a medical stand device, includes a supporting portion configured to arrange the securing element in a predefined axial position on a supporting apparatus of the stand device, and an engagement portion configured to interact with a spindle rotatably supportable about an axis of rotation in the supporting apparatus, or a pin of the stand device, to secure the spindle or pin in a predefined axial position relative to the supporting apparatus rotatably within the supporting apparatus. The securing element can be supported in at least one radial position on the supporting apparatus, in particular in a mounting preparation position and/or a securing position, wherein the engagement portion is configured to interact with the spindle or the pin by engagement in the radial direction, in particular in the securing position.

Abstract: Etching trench isolation structures into a semiconductor structure that includes an upper thin semiconductor layer disposed over a buried insulator layer and a buried compressively strained stressor layer under the buried insulator layer, the compressively strained stressor layer being disposed on an underlying semiconductor substrate, causes edge relaxation of the compressively strained stressor layer. The edge relaxation results in the buried insulation layer being deformed, thus inducing tensile strain in an upper surface of the thin semiconductor layer across at least a first portion of a lateral extent of the thin semiconductor layer between walls of one or more trenches formed by the etching.

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract: A mounting device for a stand device for arrangement in the operating room and to position or displace a medical apparatus in the operating room, in particular by means of a rotational movement, incorporates a mounting apparatus, which extends along an axis of rotation in a longitudinal direction and has a cavity, which in particular is cylindrical and which is oriented in the longitudinal direction, for accommodating a rotatably supportable connection component of the stand device, in particular a spindle; and an adjustment apparatus for arranging the connection component in a position, which can be predefined, in relation to the mounting apparatus; wherein the mounting device forms a rotational coupling for supporting the connection component on the mounting apparatus, which rotational coupling can be adjusted about the axis of rotation. The invention further relates to a mounting system including such a mounting device.

Abstract: A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.

Abstract: The rotational speed of at least one drive motor of a motor vehicle is controlled by an electronic control system, wherein the differential rotational speed between a specified target rotational speed and an actual rotational speed of the drive motor is considered as a system value for determining the control parameters that influence the rotational speed control process. As an additional system value, the magnitude and direction of the differential rotational speed gradient are considered when determining the control parameters.

Abstract: A rotatable connection for a mount device for placement in an operating room includes an adjustable stopping mechanism that can be disposed between a first connection component and a second connection component that is mounted rotatably relative to the first connection component about an axis of rotation. The adjustable stopping mechanism may be adapted to establish at least two different relative rotational angles of the connection components relative to one another or at least two different rotation ranges. The adjustable stopping mechanism includes a rotation lock that can be disposed non-rotatingly at the first connection component and a coupling part that can be disposed non-rotatingly at the second connection component and that has a form-locking contour for establishing individual rotational angle positions, and may include a stopping device with an integral stop. The stopping device may be non-rotatingly positionable. A support system or mount device are also provided.

Abstract: An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10?5-10?7 ?-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×1019 cm?3 and less than approximately 10?8 ?-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 1020 cm?3.