Patents by Inventor Andreas Knorr

Andreas Knorr has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140128386
    Abstract: The present application relates to novel substituted imidazo[1,2-a]pyridine-3-carboxamides, to processes for their preparation, to their use alone or in combinations for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular disorders.
    Type: Application
    Filed: November 4, 2013
    Publication date: May 8, 2014
    Applicant: BAYER PHARMA AKTIENGESELLSCHAFT
    Inventors: Alexandros VAKALOPOULOS, Ingo HARTUNG, Markus FOLLMANN, Rolf JAUTELAT, Alexander STRAUB, Jorma HAßFELD, Niels LINDNER, Dirk SCHNEIDER, Frank WUNDER, Johannes-Peter STASCH, Gorden REDLICH, Volkhart Min-Jian LI, Eva Maria BECKER-PELSTER, Andreas KNORR
  • Publication number: 20140128372
    Abstract: The present application relates to novel substituted imidazo[1,2-a]pyridine-3-carboxamides, to processes for their preparation, to their use alone or in combinations for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular disorders.
    Type: Application
    Filed: March 7, 2013
    Publication date: May 8, 2014
    Applicant: BAYER PHARMA AKTIENGESELLSCHAFT
    Inventors: Alexandros VAKALOPOULOS, Markus FOLLMANN, Ingo HARTUNG, Philipp BUCHGRABER, Rolf JAUTELAT, Jorma HAßFELD, Niels LINDNER, Frank WUNDER, Johannes-Peter STASCH, Gorden REDLICH, Volkhart Min-Jian LI, Eva-Maria BECKER, Andreas KNORR
  • Patent number: 8709882
    Abstract: A precision resistor is formed with a controllable resistance to compensate for variations that occur with temperature. An embodiment includes forming a resistive semiconductive element having a width and a length on a substrate, patterning an electrically conductive line across the width of the resistive semiconductive element, but electrically isolated therefrom, and forming a depletion channel in the resistive semiconductive element under the electrically conductive line to control the resistance value of the resistive semiconductive element. The design enables dynamic adjustment of the resistance, thereby improving the reliability of the resistor or allowing for resistance modification during final packaging.
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: April 29, 2014
    Assignee: GlobalFoundries Inc.
    Inventors: Steven R. Soss, Andreas Knorr
  • Publication number: 20140113900
    Abstract: The present application relates to novel substituted imidazopyridazines, to processes for their preparation, to their use, alone or in combinations, for the treatment and/or prophylaxis of diseases and to their use for production of medicaments for the treatment and/or prophylaxis of diseases, especially for the treatment and/or prophylaxis of cardiovascular disorders.
    Type: Application
    Filed: May 2, 2012
    Publication date: April 24, 2014
    Applicant: BAYER INTELLECTUAL PROPERTY GMBH
    Inventors: Markus Follmann, Johannes-Peter Stasch, Gorden Redlich, Alexander Straub, Jens Ackerstaff, Nils Griebenow, Andreas Knorr, Frank Wunder, Volkhart Min-Jian Li
  • Patent number: 8691850
    Abstract: The present application relates to novel phenylaminothiazole derivatives, to processes for their preparation, to their use for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, preferably for the treatment and/or prevention of hypertension and other cardiovascular disorders.
    Type: Grant
    Filed: August 30, 2005
    Date of Patent: April 8, 2014
    Assignee: Bayer Intellectual Property GmbH
    Inventors: Jens-Kerim Ergüden, Gunter Karig, Ulrich Rosentreter, Barbara Albrecht, Kerstin Henninger, Joachim Hütter, Nicole Diedrichs, Peter Nell, Sabine Arndt, Walter Hübsch, Andreas Knorr, Karl-Heinz Schlemmer, Dirk Brohm
  • Patent number: 8653109
    Abstract: The present invention relates to novel substituted 2,4?- and 3,4?-bipyridine derivatives, to processes for their preparation, to their use for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, preferably for the treatment and/or prevention of hypertension and other cardiovascular disorders.
    Type: Grant
    Filed: August 30, 2007
    Date of Patent: February 18, 2014
    Assignee: Bayer Intellectual Property GmbH
    Inventors: Peter Nell, Walter Hübsch, Barbara Albrecht-Küpper, Joerg Keldenich, Andreas Knorr
  • Publication number: 20140038956
    Abstract: The use of sGC stimulators, sGC activators alone, or in combination with PDE5 inhibitors for the prevention and treatment of fibrotic diseases, such as systemic sclerosis, scleroderma, and the concomitant fibrosis of internal organs.
    Type: Application
    Filed: May 24, 2011
    Publication date: February 6, 2014
    Applicant: BAYER INTELLECTUAL PROPERTY GMBH
    Inventors: Claudia Hirth-Dietrich, Peter Sandner, Johannes-Peter Stasch, Andreas Knorr, Georges Von Degenfeld, Michael Hahn, Markus Follmann
  • Patent number: 8642592
    Abstract: The present application relates to novel alkylcarboxylic acids having an oxo-substituted azaheterocyclic partial structure, to processes for their preparation, to their use for the treatment and/or prevention of diseases, and to their use for producing medicaments for the treatment and/or prevention of diseases, especially for the treatment and/or prevention of cardiovascular disorders.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: February 4, 2014
    Assignee: Bayer Intellectual Property GmbH
    Inventors: Thomas Lampe, Michael Hahn, Johannes-Peter Stasch, Karl-Heinz Schlemmer, Frank Wunder, Stefan Heitmeier, Nils Griebenow, Sherif El Sheikh, Volkhart Min-Jian Li, Eva-Maria Becker, Friederike Stoll, Andreas Knorr
  • Patent number: 8609727
    Abstract: The present application relates to novel dicarboxylic acid derivatives, process for their preparation, their use for the treatment and/or prophylaxis of diseases, and their use for producing medicaments for the treatment and/or prophylaxis of diseases, especially for the treatment and/or prevention of cardiovascular disorders.
    Type: Grant
    Filed: October 17, 2006
    Date of Patent: December 17, 2013
    Assignee: Bayer Intellectual Property GmbH
    Inventors: Stephan Bartel, Michael Hahn, Wahed Ahmed Moradi, Eva-Maria Becker, Thomas Rölle, Johannes-Peter Stasch, Karl-Heinz Schlemmer, Frank Wunder, Andreas Knorr, Dieter Lang
  • Publication number: 20130267548
    Abstract: The present application relates to novel substituted 6-fluoro-1H-pyrazolo[4,3-b]pyridines, to processes for preparation thereof, to the use thereof, alone or in combinations, for treatment and/or prophylaxis of diseases and to the use thereof for preparing Medicaments for the treatment and/or prophylaxis of diseases, especially for treatment and/or prophylaxis of cardiovascular disorders.
    Type: Application
    Filed: November 3, 2011
    Publication date: October 10, 2013
    Applicant: BAYER INTELLECTUAL PROPERTY GMBH
    Inventors: Markus Follmann, Johannes-Peter Stasch, Gorden Redlich, Jens Ackerstaff, Nils Griebenow, Andreas Knorr, Frank Wunder, Volkhart Min-Jian Li, Joachim Mittendorf, Karl-Heinz Schlemmer, Rolf Jautelat
  • Patent number: 8533651
    Abstract: An approach for providing conversion of a planar design to a FinFET design is disclosed. Embodiments include: receiving a planar design having a plurality of diffusion regions; overlapping a plurality of parallel fin mandrels with a plurality of evenly-spaced parallel lines of a grid; snapping the diffusion regions to the grid based on the parallel lines; and generating a FinFET design based on the overlapping and the snapping. Embodiments include the parallel lines and the parallel fin mandrels being perpendicular to a poly orientation associated with the planar design, and determining a spacing length between the parallel lines; determining a plurality of edges of the diffusion regions that are parallel to the poly orientation; and cropping the diffusion regions until each of the edges has a length that is a multiple of the spacing length.
    Type: Grant
    Filed: July 18, 2012
    Date of Patent: September 10, 2013
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Soon Yoeng Tan, Angeline Ho, Hendry Renaldo, Andreas Knorr, Scott Johnson
  • Publication number: 20130210797
    Abstract: The present invention relates to the use of selective adenosine A1 agonists, in particular the dicyanopyridines of formula (I), for the treatment and/or prophylaxis of glaucoma and ocular hypertension as well as the their use for the production of a medicament for the treatment and/or prophylaxis of glaucoma and ocular hypertension.
    Type: Application
    Filed: August 29, 2011
    Publication date: August 15, 2013
    Applicant: BAYER INTELLECTUAL PROPERTY GMBH
    Inventors: Jürgen Klar, Georges Von Degenfeld, Hans-Georg Lerchen, Barbara Albrecht-Küpper, Andreas Knorr, Peter Sandner, Daniel Meiibom
  • Publication number: 20130187236
    Abstract: Disclosed herein are methods of forming replacement gate structures. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, removing the sacrificial gate structure to thereby define a gate cavity, forming a layer of insulating material in the gate cavity and forming a layer of metal within the gate cavity above the layer of insulating material. The method further includes forming a sacrificial material in the gate cavity so as to cover a portion of the layer of metal and thereby define an exposed portion of the layer of metal, performing an etching process on the exposed portion of the layer of metal to thereby remove the exposed portion of the layer of metal from within the gate cavity, and, after performing the etching process, removing the sacrificial material and forming a conductive material above the remaining portion of the layer of metal.
    Type: Application
    Filed: January 20, 2012
    Publication date: July 25, 2013
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Ruilong Xie, Xiuyu Cai, Robert Miller, Andreas Knorr
  • Publication number: 20130172372
    Abstract: The present application relates to novel fused 4-aminopyrimidines, to processes for preparation thereof, to the use thereof, alone or in combinations, for treatment and/or prophylaxis of diseases and to the use thereof for production of medicaments for the treatment and/or prophylaxis of diseases, especially for treatment and/or prophylaxis of cardiovascular disorders.
    Type: Application
    Filed: July 5, 2011
    Publication date: July 4, 2013
    Applicant: BAYER INTELLECTUAL PROPERTY GMBH
    Inventors: Markus Follmann, Johannes-Peter Stasch, Gorden Redlich, Jens Ackerstaff, Nils Griebenow, Andreas Knorr, Frank Wunder, Volkhart Min-Jian Li
  • Publication number: 20130092957
    Abstract: A semiconductor device is formed with low resistivity self aligned silicide contacts with high-K/metal gates. Embodiments include postponing silicidation of a metal layer on source/drain regions in a silicon substrate until deposition of a high-K dielectric, thereby preserving the physical and morphological properties of the silicide film and improving device performance. An embodiment includes forming a replaceable gate electrode on a silicon-containing substrate, forming source/drain regions, forming a metal layer on the source/drain regions, forming an ILD over the metal layer on the substrate, removing the replaceable gate electrode, thereby forming a cavity, depositing a high-K dielectric layer in the cavity at a temperature sufficient to initiate a silicidation reaction between the metal layer and underlying silicon, and forming a metal gate electrode on the high-K dielectric layer.
    Type: Application
    Filed: December 3, 2012
    Publication date: April 18, 2013
    Applicant: GLOBALFOUNDRIES Inc.
    Inventors: Indradeep SEN, Thorsten KAMMLER, Andreas KNORR, Akif SULTAN
  • Patent number: 8420656
    Abstract: The present application relates to novel substituted 5-fluoro-1H-pyrazolopyridines, to processes for their preparation, to their use alone or in combinations for the treatment and/or prophylaxis of diseases, and to their use for producing medicaments for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular disorders.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: April 16, 2013
    Assignee: Bayer Intellectual Property GmbH
    Inventors: Markus Follmann, Johannes-Peter Stasch, Gorden Redlich, Jens Ackerstaff, Nils Griebenow, Walter Kroh, Andreas Knorr, Eva-Maria Becker, Frank Wunder, Volkhart Min-Jian Li, Elke Hartmann, Joachim Mittendorf, Karl-Heinz Schlemmer, Rolf Jautelat, Donald Bierer
  • Publication number: 20130079412
    Abstract: The present application relates to novel 3-phenylpropionic acid derivatives which carry a branched or cyclic alkyl substituent in the 3-position, to processes for their preparation, to their use for the treatment and/or prevention of diseases and to their use for preparing medicaments for the treatment and/or prevention of diseases, in particular for the treatment and/or prevention of cardiovascular diseases.
    Type: Application
    Filed: March 27, 2012
    Publication date: March 28, 2013
    Applicant: BAYER PHARMA AKTIENGESELLSCHAFT
    Inventors: Michael HAHN, Thomas LAMPE, Johannes-Peter STASCH, Karl-Heinz SCHLEMMER, Frank WUNDER, Volkhart Min-Jian LI, Eva-Maria BECKER, Friederike STOLL, Andreas KNORR, Elisabeth WOLTERING
  • Patent number: 8404709
    Abstract: The present application relates to novel substituted 4-aryl-1,4-dihydro-1,6-naphthyridines, a process for their preparation, their use for the treatment and/or prophylaxis of diseases, and their use for the manufacture of medicaments for the treatment and/or prophylaxis of diseases, especially cardiovascular disorders.
    Type: Grant
    Filed: June 1, 2007
    Date of Patent: March 26, 2013
    Assignee: Bayer Intellectual Property GmbH
    Inventors: Santiago Figueroa Perez, Peter Kolkhof, Lars Bärfacker, Ingo Flamme, Karl-Heinz Schlemmer, Rolf Grosser, Klaus Münter, Andreas Knorr, Adam Nitsche
  • Patent number: 8399471
    Abstract: The present application relates to novel aryl- or heteroaryl-substitued pyrido[2,3-d] pyrimidines of formula (I), pharmaceuitical compositions of the same, and a process for their preparation. Formula(I) is: wherein Ar is an aryl or heteroaryl substituent, and R1, R2, R3, Ar, D, and E are as defined in the specification. Compounds and compositions of the present invention can be used in the treatment and/or prophylaxis of various disorders in humans and animals, including aldosteronism, high blood pressure, chronic heart failure, the sequelae of a myocardial infarction, cirrhosis of the liver, renal failure, and stroke.
    Type: Grant
    Filed: May 25, 2007
    Date of Patent: March 19, 2013
    Assignee: Bayer Intellectual Property GmbH
    Inventors: Santiago Figueroa Perez, Peter Kolkhof, Lars Bärfacker, Ingo Flamme, Karl-Heinz Schlemmer, Alexander Kuhl, Rolf Grosser, Klaus Münter, Andreas Knorr
  • Patent number: 8361870
    Abstract: A semiconductor device is formed with low resistivity self aligned silicide contacts with high-K/metal gates. Embodiments include postponing silicidation of a metal layer on source/drain regions in a silicon substrate until deposition of a high-K dielectric, thereby preserving the physical and morphological properties of the silicide film and improving device performance. An embodiment includes forming a replaceable gate electrode on a silicon-containing substrate, forming source/drain regions, forming a metal layer on the source/drain regions, forming an ILD over the metal layer on the substrate, removing the replaceable gate electrode, thereby forming a cavity, depositing a high-K dielectric layer in the cavity at a temperature sufficient to initiate a silicidation reaction between the metal layer and underlying silicon, and forming a metal gate electrode on the high-K dielectric layer.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: January 29, 2013
    Assignee: Globalfoundries Inc.
    Inventors: Indradeep Sen, Thorsten Kammler, Andreas Knorr, Akif Sultan