Patents by Inventor Andreas LOEFFLER
Andreas LOEFFLER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11557698Abstract: Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.Type: GrantFiled: January 17, 2017Date of Patent: January 17, 2023Assignee: OSRAM OLED GMBHInventors: Andreas Loeffler, Adam Bauer, Matthias Peter, Michael Binder
-
Patent number: 11201454Abstract: The invention relates to a semiconductor laser comprising a layer structure comprising an active zone, wherein the active zone is configured to generate an electromagnetic radiation, wherein the layer structure comprises a sequence of layers, wherein two opposite end faces are provided in a Z-direction, wherein at least one end face is configured to at least partly couple out the electromagnetic radiation, and wherein the second end face is configured to at least partly reflect the electromagnetic radiation, wherein guide means are provided for forming an optical mode in a mode space between the end faces, wherein means are provided which hinder a formation of an optical mode outside the mode space, in particular modes comprising a propagation direction which do not extend perpendicularly to the end faces.Type: GrantFiled: April 7, 2017Date of Patent: December 14, 2021Assignee: OSRAM OLED GMBHInventors: Clemens Vierheilig, Alfred Lell, Sven Gerhard, Andreas Loeffler
-
Patent number: 11165223Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.Type: GrantFiled: June 2, 2020Date of Patent: November 2, 2021Assignee: OSRAM OLED GMBHInventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Loeffler
-
Patent number: 11004876Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: GrantFiled: July 31, 2019Date of Patent: May 11, 2021Assignee: OSRAM OLED GMBHInventors: Christoph Eichler, Andre Somers, Harald Koenig, Bernhard Stojetz, Andreas Loeffler, Alfred Lell
-
Patent number: 10811582Abstract: An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon.Type: GrantFiled: June 15, 2016Date of Patent: October 20, 2020Assignee: OSRAM OLED GMBHInventors: Andreas Loeffler, Thomas Hager, Christoph Walter, Alfred Lell
-
Patent number: 10811843Abstract: The disclosure relates to a semiconductor laser includes a semiconductor layer sequence with an-n-type n-region, a p-type p-region and an active zone lying between the two for the purpose of generating laser radiation. A p-contact layer that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region for the purpose of current input. An electrically-conductive metallic p-contact structure is applied directly to the p-contact layer. The p-contact layer is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer during operation of the semiconductor laser. Two facets of the semiconductor layer sequence form resonator end surfaces for the laser radiation.Type: GrantFiled: September 27, 2016Date of Patent: October 20, 2020Assignee: OSRAM OLED GMBHInventors: Sven Gerhard, Alfred Lell, Clemens Vierheilig, Andreas Loeffler, Christoph Eichler
-
Publication number: 20200303898Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.Type: ApplicationFiled: June 2, 2020Publication date: September 24, 2020Inventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Loeffler
-
Patent number: 10784653Abstract: A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.Type: GrantFiled: February 23, 2017Date of Patent: September 22, 2020Assignee: OSRAM OLED GmbHInventors: Andreas Loeffler, Clemens Vierheilig, Sven Gerhard
-
Patent number: 10637211Abstract: A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: GrantFiled: May 12, 2017Date of Patent: April 28, 2020Assignee: OSRAM OLED GMBHInventors: Christoph Eichler, Andre Somers, Bernhard Stojetz, Andreas Loeffler, Alfred Lell
-
Publication number: 20190393676Abstract: The invention relates to a semiconductor laser (1) comprising a semiconductor layer sequence (2) with an n-type n-region (21), a p-type p-region (23) and an active zone (22) lying between the two for the purpose of generating laser radiation. A p-contact layer (3) that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region (23) for the purpose of current input. An electrically-conductive metallic p-contact structure (4) is applied directly to the p-contact layer (3). The p-contact layer (3) is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer (3) during operation of the semi-conductor laser (1). Two facets (25) of the semiconductor layer sequence (2) form resonator end surfaces for the laser radiation. Current input into the p-region (23) is inhibited in at least one current protection region (5) directly on at least one of the facets (25).Type: ApplicationFiled: September 27, 2016Publication date: December 26, 2019Applicant: OSRAM Opto Semiconductors GmbHInventors: Sven GERHARD, Alfred LELL, Clemens VIERHEILIG, Andreas LOEFFLER, Christoph EICHLER
-
Publication number: 20190355768Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: ApplicationFiled: July 31, 2019Publication date: November 21, 2019Inventors: Christoph EICHLER, Andre SOMERS, Harald KOENIG, Bernhard STOJETZ, Andreas LOEFFLER, Alfred LELL
-
Publication number: 20190319162Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: ApplicationFiled: June 25, 2019Publication date: October 17, 2019Inventors: Alfred LELL, Andreas LÖEFFLER, Christoph EICHLER, Bernhard STOJETZ, André SOMERS
-
Patent number: 10396106Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: GrantFiled: May 12, 2017Date of Patent: August 27, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christoph Eichler, Andre Somers, Harald Koenig, Bernhard Stojetz, Andreas Loeffler, Alfred Lell
-
Patent number: 10388823Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: GrantFiled: May 12, 2017Date of Patent: August 20, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Alfred Lell, Andreas Loeffler, Christoph Eichler, Bernhard Stojetz, Andre Somers
-
Patent number: 10388829Abstract: The invention describes a radiation-emitting semiconductor component (100) having a first semiconductor layer sequence (10) which is designed to generate radiation of a first wavelength, a second semiconductor layer sequence (20), a first electrode area (1) and a second electrode area (2). It is provided that the second semiconductor layer sequence (20) has a quantum pot structure (21) with a quantum layer structure (22) and a barrier layer structure (23) and is designed to generate incoherent radiation of a second wavelength by means of absorption of the radiation of the first wavelength, and an electric field can be generated in the second semiconductor layer sequence (20) by the first electrode area (1) and the second electrode area (2).Type: GrantFiled: April 13, 2016Date of Patent: August 20, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Adam Bauer, Andreas Loeffler
-
Publication number: 20190229497Abstract: The invention relates to a semiconductor laser comprising a layer structure comprising an active zone, wherein the active zone is configured to generate an electromagnetic radiation, wherein the layer structure comprises a sequence of layers, wherein two opposite end faces are provided in a Z-direction, wherein at least one end face is configured to at least partly couple out the electromagnetic radiation, and wherein the second end face is configured to at least partly reflect the electromagnetic radiation, wherein guide means are provided for forming an optical mode in a mode space between the end faces, wherein means are provided which hinder a formation of an optical mode outside the mode space, in particular modes comprising a propagation direction which do not extend perpendicularly to the end faces.Type: ApplicationFiled: April 7, 2017Publication date: July 25, 2019Applicant: OSRAM Opto Semiconductors GmbHInventors: Clemens VIERHEILIG, Alfred LELL, Sven GERHARD, Andreas LOEFFLER
-
Publication number: 20190052062Abstract: A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.Type: ApplicationFiled: February 23, 2017Publication date: February 14, 2019Inventors: Andreas Loeffler, Clemens Vierheilig, Sven Gerhard
-
Publication number: 20180375002Abstract: Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.Type: ApplicationFiled: January 17, 2017Publication date: December 27, 2018Applicant: OSRAM Opto Semiconductors GmbHInventors: Andreas LOEFFLER, Adam BAUER, Matthias PETER, Michael BINDER
-
Publication number: 20180323573Abstract: A semiconductor laser includes a semiconductor layer sequence, an active zone, a ridge waveguide as an elevation of a top side of the semiconductor layer sequence, the longitudinal axis of which is oriented along the active zone, a contact metalization, and a current flow layer in direct contact with the contact metalization, wherein the top side of the semiconductor layer sequence includes a section adjoining one of the two facets over the width of the section relative to a longitudinal axis of the ridge waveguide, the section includes a subsection of the top side of the ridge waveguide, the subsection adjoins one of two facets over a width of the ridge waveguide relative to the longitudinal axis of the ridge waveguide, the section is partly delimited by a plurality of current flow layer sections of the current flow layer, and the section is free of the current flow layer.Type: ApplicationFiled: November 4, 2016Publication date: November 8, 2018Inventors: Sven Gerhard, Clemens Vierheilig, Andreas Loeffler
-
Publication number: 20180182946Abstract: An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon.Type: ApplicationFiled: June 15, 2016Publication date: June 28, 2018Inventors: Andreas Loeffler, Thomas Hager, Christoph Walter, Alfred Lell