Patents by Inventor Andreas LOEFFLER
Andreas LOEFFLER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10811582Abstract: An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon.Type: GrantFiled: June 15, 2016Date of Patent: October 20, 2020Assignee: OSRAM OLED GMBHInventors: Andreas Loeffler, Thomas Hager, Christoph Walter, Alfred Lell
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Publication number: 20200303898Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.Type: ApplicationFiled: June 2, 2020Publication date: September 24, 2020Inventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Loeffler
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Patent number: 10784653Abstract: A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.Type: GrantFiled: February 23, 2017Date of Patent: September 22, 2020Assignee: OSRAM OLED GmbHInventors: Andreas Loeffler, Clemens Vierheilig, Sven Gerhard
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Publication number: 20200287355Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.Type: ApplicationFiled: June 13, 2017Publication date: September 10, 2020Inventors: Clemens Vierheilig, Andreas Löffler, Sven Gerhard
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Publication number: 20200256980Abstract: A method for classification of ground conditions in the vicinity of a vehicle using a radar sensor, comprising: receiving reflected portions of a radar signal at a receiver unit of a radar system; calculating information derived from the received portions of the radar signal for discrete spatial regions by the radar system or a control unit connected thereto; assigning the information to data structure units associated with a geographical location and the assignment of the information taking into account movement of the vehicle; collecting pieces of information in the respective data structure units, the pieces of information being obtained from reflected portions of radar signals transmitted at different times; evaluating the information contained in the data structure using a classifier to obtain information regarding the ground condition; assigning ground condition types to the data structure units based on evaluation results obtained by the classifier.Type: ApplicationFiled: October 15, 2018Publication date: August 13, 2020Applicants: Conti Temic microelectronic GmbH, Volkswagen AGInventors: Thorsten Bagdonat, Marc-Michael Meinecke, Andreas Löffler, Thomas Fechner
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Patent number: 10727645Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15°.Type: GrantFiled: March 13, 2017Date of Patent: July 28, 2020Assignee: OSRAM OLED GmbHInventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Löffler
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Publication number: 20200227893Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.Type: ApplicationFiled: March 30, 2020Publication date: July 16, 2020Inventors: Sven Gerhard, Alfred Lell, Clemens Vierheilig, Andreas Löffler
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Patent number: 10693033Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: GrantFiled: June 25, 2019Date of Patent: June 23, 2020Assignee: OSRAM OLED GMBHInventors: Alfred Lell, Andreas Löffler, Christoph Eichler, Bernhard Stojetz, André Somers
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Patent number: 10686296Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.Type: GrantFiled: September 29, 2016Date of Patent: June 16, 2020Assignee: OSRAM OLED GmbHInventors: Sven Gerhard, Alfred Lell, Clemens Vierheilig, Andreas Löffler
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Publication number: 20200135969Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.Type: ApplicationFiled: December 20, 2019Publication date: April 30, 2020Inventors: Adam Bauer, Wolfgang Mönch, David Racz, Michael Wittmann, Dominik Schulten, Andreas Löffler
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Patent number: 10637211Abstract: A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: GrantFiled: May 12, 2017Date of Patent: April 28, 2020Assignee: OSRAM OLED GMBHInventors: Christoph Eichler, Andre Somers, Bernhard Stojetz, Andreas Loeffler, Alfred Lell
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Patent number: 10608413Abstract: The invention relates to a laser assembly, wherein, in one embodiment, the laser assembly (1) comprises a plurality of laser groups (2) each having at least one semiconductor laser (20). Furthermore, the laser assembly (1) contains a plurality of photothyristors (3), each laser group (2) being clearly assigned one of the photothyristors (3). The photothyristors (3) are each connected electrically in series with the associated laser group (2) and/or integrated in the associated laser group (2). Furthermore, the photothyristors (3) are each optically coupled to the associated laser group (2). A dark breakdown voltage (Ut) of each photothyristor (3) lies above an intended operating voltage (Ub) of the associated laser group (2).Type: GrantFiled: April 27, 2017Date of Patent: March 31, 2020Assignee: OSRAM OLED GMBHInventors: Sven Gerhard, Clemens Vierheilig, Andreas Löffler
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Patent number: 10553748Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.Type: GrantFiled: May 22, 2015Date of Patent: February 4, 2020Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Adam Bauer, Wolfgang Mönch, David Racz, Michael Wittmann, Dominik Schulten, Andreas Löffler
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Publication number: 20190393676Abstract: The invention relates to a semiconductor laser (1) comprising a semiconductor layer sequence (2) with an n-type n-region (21), a p-type p-region (23) and an active zone (22) lying between the two for the purpose of generating laser radiation. A p-contact layer (3) that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region (23) for the purpose of current input. An electrically-conductive metallic p-contact structure (4) is applied directly to the p-contact layer (3). The p-contact layer (3) is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer (3) during operation of the semi-conductor laser (1). Two facets (25) of the semiconductor layer sequence (2) form resonator end surfaces for the laser radiation. Current input into the p-region (23) is inhibited in at least one current protection region (5) directly on at least one of the facets (25).Type: ApplicationFiled: September 27, 2016Publication date: December 26, 2019Applicant: OSRAM Opto Semiconductors GmbHInventors: Sven GERHARD, Alfred LELL, Clemens VIERHEILIG, Andreas LOEFFLER, Christoph EICHLER
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Patent number: 10505337Abstract: A diode bar and a method for producing a laser diode bar are disclosed. In an embodiment a laser diode bar includes a plurality of emitters arranged side by side, the each emitter having a semiconductor layer sequence with an active layer suitable for generating laser radiation, a p-contact and an n-contact, wherein the emitters comprise a group of electrically contacted first emitters and a group of non-electrically contacted second emitters, wherein the p-contacts of the first emitters are electrically contacted by a p-connecting layer, and wherein the p-contacts of the second emitters are separated from the p-connecting layer by an electrically insulating layer and are not electrically contacted.Type: GrantFiled: October 10, 2018Date of Patent: December 10, 2019Assignee: OSRAM OPTO SEMICONDUCTOR GMBHInventors: Sven Gerhard, Andreas Löffler
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Publication number: 20190355768Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: ApplicationFiled: July 31, 2019Publication date: November 21, 2019Inventors: Christoph EICHLER, Andre SOMERS, Harald KOENIG, Bernhard STOJETZ, Andreas LOEFFLER, Alfred LELL
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Patent number: 10475951Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A substrate is provided and a first layer is grown. An etching process is carrying out to initiate V-defects. A second layer is grown and a quantum film structure is grown. An optoelectronic semiconductor chip is also disclosed. The method can be used to produce the optoelectronic semiconductor chip.Type: GrantFiled: March 28, 2014Date of Patent: November 12, 2019Assignee: OSRAM Opto Semiconductors GmbHInventors: Andreas Löffler, Tobias Meyer, Adam Bauer, Christian Leirer
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Publication number: 20190319162Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: ApplicationFiled: June 25, 2019Publication date: October 17, 2019Inventors: Alfred LELL, Andreas LÖEFFLER, Christoph EICHLER, Bernhard STOJETZ, André SOMERS
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Patent number: 10396106Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: GrantFiled: May 12, 2017Date of Patent: August 27, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christoph Eichler, Andre Somers, Harald Koenig, Bernhard Stojetz, Andreas Loeffler, Alfred Lell
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Patent number: 10388829Abstract: The invention describes a radiation-emitting semiconductor component (100) having a first semiconductor layer sequence (10) which is designed to generate radiation of a first wavelength, a second semiconductor layer sequence (20), a first electrode area (1) and a second electrode area (2). It is provided that the second semiconductor layer sequence (20) has a quantum pot structure (21) with a quantum layer structure (22) and a barrier layer structure (23) and is designed to generate incoherent radiation of a second wavelength by means of absorption of the radiation of the first wavelength, and an electric field can be generated in the second semiconductor layer sequence (20) by the first electrode area (1) and the second electrode area (2).Type: GrantFiled: April 13, 2016Date of Patent: August 20, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Adam Bauer, Andreas Loeffler