Abstract: The invention relates to a flooding chamber for coating installations, with which shorter flooding times, and therewith shorter clock cycles, can be attained. Two flooding means are therein utilized, between which a substrate is disposed symmetrically. The flooding means direct a gas jet directly onto the substrate. Hereby the substrate is fixed between the flooding means.

Abstract: The invention relates to a magnetron with a planar target and a planar magnet system. The planar magnet system comprises a bar-shaped first magnet pole with enlarged ends and a frame-shaped second magnet pole, wherein a relative movement between the magnet poles and the target is such that every point of the magnet system moving with the target being stationary moves on a circular path. If the magnet system is stationary, each point of the target moves on such a circular path. During the relative movement with respect to one another the magnet system and the target are in parallel planes. The diameter of the circular path corresponds to the mean distance between two parallel arms of a plasma tube, which during the sputter operation develops between the first and the second magnet pole. Thereby that the magnets in the curve region of the plasma tube are disposed such that the pole lines form at this site a circle arc or a circular area, holes in the target are avoided.

Abstract: A magnetic arrangement for a planar magnetron, in which an initial magnetic pole encompasses a second magnetic pole. This magnetic arrangement is moved linear in longitudinal direction to a target by a specific value and then moved back in opposite direction by the same value. In one version, an additional perpendicular motion is effected. The magnet arrangement is designed so that north and south pole interlock and waviform racetracks are generated. This enables constant sputtering from the entire target surface.

Abstract: The invention relates to a method for operating a magnetron sputter cathode, in particular a tube cathode or several tube cathodes forming an array. In such cathodes a target passes through a magnetic field, whereby induction currents flow in the target which distort the magnetic field. This results in the nonuniform coating of a substrate. By having the relative movement between magnetic field and target alternately reverse its direction, the effect of the magnetic field distortion can be compensated. This yields greater uniformity of the coating on a substrate to be coated.

Abstract: A magnetic arrangement for a planar magnetron, in which an initial magnetic pole encompasses a second magnetic pole. This magnetic arrangement is moved linear in longitudinal direction to a target by a specific value and then moved back in opposite direction by the same value. In one version, an additional perpendicular motion is effected. The magnet arrangement is designed so that north and south pole interlock and waviform racetracks are generated. This enables constant sputtering from the entire target surface.

Abstract: This invention relates to a coater for the coating, in particular, of large-area substrates by means of cathode sputtering, the coater having a coating chamber and, provided therein, a cathode assembly (2) where the material to be sputtered is located on a target (4) with a curved surface, the material to be sputtered being located, in particular, on the lateral surface of a cylinder, there being in a single coating chamber for a coherent coating zone at least three, preferably more, cathode assemblies (2) with rotatable, curved targets (4) positioned one beside the other.

Abstract: The invention relates to a sputter arrangement with a magnetron and a target, with the magnetron and the target being movable relative to one another. The magnetron comprises a magnet system, which forms a quasi-rectangular plasma tube, whose two longitudinal sides have a distance C from one another. If target and magnet system are moved relative to one another by a path corresponding approximately to the distance C, the magnet system is laid out such that the width at the end of the plasma tube is smaller or equal to the diameter of the plasma tube. However, if the path of the relative movement is less than C, the magnet system is laid out such that the width d of the ends of the plasma tube is less or equal to twice the diameter of the plasma tube.