Abstract: An indirect time of flight range calculation apparatus (100) comprises a light source, a photonic mixer cell (102) that generates a plurality of output signals respectively corresponding to a first plurality of predetermined phase values (p1, p2, . . . , pm). A signal processing circuit (110, 124, 128, 146) is also provided to process the first plurality of electrical output signals in order to calculate a first vector and a first angle from the first vector. The photonic mixer (102) generates a second plurality of electrical output signals corresponding to a second plurality of predetermined phase values ([p1, p2, . . . , pm]+?/m). Each phase value of the second plurality of predetermined phase values is respectively offset with respect to each phase value of the first plurality of predetermined phase values by a predetermined phase offset value.

Abstract: A gripper for gripping a tube for punching may include a first arm having a lower portion and an upper portion disposed outwardly from an upper surface of the lower portion. The upper portion extends to opposite first and second side surfaces and opposite third and fourth side surfaces, where opposite edges of the first and second side surfaces each meet an edge of one of the opposite third and fourth side surfaces. The second side surface includes a groove extending from the second side surface towards the first side surface and along a length of the second side surface. The groove is configured to receive at least a portion of a tube when a second arm like the first arm is disposed adjacent to and aligned with the first arm.

Abstract: A method for detecting and processing echo signals comprises detecting reflections of a transmitted signal as echo signals, obtaining digital magnitudes representative of an envelope of the echo signals over time, applying the digital magnitudes to a plurality of data storing cells, estimating a signal threshold by accumulating the digital magnitudes from a predetermined number of reference window cells at each side of a predetermined cell-under-test in the plurality of data storing cells and multiplying the resulting accumulated signal by a predetermined first weight factor, thus obtaining an estimated signal threshold, comparing the threshold with the signal stored in the predetermined cell-under-test in the plurality of data storing cells, thus reducing chances of false detection.

Abstract: A transmitter device comprising a resonant antenna circuit and a driver circuit. The resonant antenna circuit comprises three branches: a first branch with an inductor coil, a second branch with a first capacitance, and a third branch with a second capacitance connected in series with a first switch. The antenna circuit has a first and second resonance frequency respectively higher and lower than a target frequency, depending on whether the first switch is closed. The driver circuit monitors an oscillating voltage of the antenna circuit and detects oscillations thereof by detecting zero-crossing moments, and controls the first switch such that, on average, the number of oscillations of the oscillating voltage per time unit is equal to a predefined target frequency.

Abstract: A high-voltage sensing device providing full galvanic isolation between a high-voltage domain and a low-voltage domain, wherein the circuit topology of the device resembles that of a Wheatstone bridge, the Wheatstone bridge employing at least one voltage-controlled semiconductor resistor, wherein the circuit also comprises a reference source connected directly to the Wheatstone bridge and the device comprises a number of shielding structures to electrically isolate the high-voltage domain from the low-voltage domain.

Abstract: A high-voltage sensing device providing full galvanic isolation between a high-voltage domain and a low-voltage domain, wherein the circuit topology of the device resembles that of a Wheatstone bridge, the Wheatstone bridge employing at least one voltage-controlled semiconductor resistor, wherein the circuit also comprises a reference source connected directly to the Wheatstone bridge and the device comprises a number of shielding structures to electrically isolate the high-voltage domain from the low-voltage domain.

Abstract: A transmitter and a receiver for transmitting and receiving data via a power supply line comprise a local signal port for respectively receiving and transmitting a serial bit stream and a power line connection port for respectively transmitting a radio frequency signal and receiving the radio frequency signal via the power supply line. The transmitter comprises a modulator unit adapted for encoding the serial bit stream into a baseband signal and generating the radio frequency signal by mixing the baseband signal with a carrier wave so as to redundantly convey the at least one baseband signal in at least four spectral sidebands of the carrier wave. The receiver comprises a demodulator unit adapted for detecting the at least four spectral sidebands of the carrier wave in the radio frequency signal, isolating a baseband signal from the at least four spectral sidebands and decoding the baseband signal into the serial bit stream.

Abstract: A particle sensor arranged in an exhaust duct such that particles from the exhaust-gas flow accumulate on and/or between at least two sensor electrodes when a voltage greater than a limit voltage is applied between the two sensor electrodes and substantially no particles accumulate if the voltage is lower than the limit voltage. During a first time period, a first voltage greater than the limit voltage is applied between the sensor electrodes. During a second time period, a second voltage, lower than the limit voltage, is applied between the sensor electrodes, and/or the particle sensor is heated to a predefined temperature, such that substantially no particles accumulate on and/or between the at least two sensor electrodes. Following the second time period, a third voltage greater than the limit voltage is applied between the sensor electrodes.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a metal contact structure, an electrically conductive capping layer formed on the metal contact structure, and a conductive via electrically connected to the metal contact structure through the electrically conductive capping layer.

Abstract: A method for producing a sensor element for a sensor for detection of substances contained in a gas flow includes: providing a ceramic carrier; and producing an open measurement electrode, arranged on the carrier and exposed to the gas flow. The open measurement electrode is produced by: a combined printing technique from a cermet base print for a base layer of a ceramic-platinum cermet, arranged on the carrier, and a platinum upper printing for a cover layer of sintered platinum arranged on the base layer.

Abstract: A transmitter and a receiver for transmitting and receiving data via a power supply line comprise a local signal port for respectively receiving and transmitting a serial bit stream and a power line connection port for respectively transmitting a radio frequency signal and receiving the radio frequency signal via the power supply line. The transmitter comprises a modulator unit adapted for encoding the serial bit stream into a baseband signal and generating the radio frequency signal by mixing the baseband signal with a carrier wave so as to redundantly convey the at least one baseband signal in at least four spectral sidebands of the carrier wave. The receiver comprises a demodulator unit adapted for detecting the at least four spectral sidebands of the carrier wave in the radio frequency signal, isolating a baseband signal from the at least four spectral sidebands and decoding the baseband signal into the serial bit stream.

Abstract: A method and device for measuring the soot load in the exhaust gas systems of diesel engines using a sensor which is mounted downstream of a particulate filter and comprises a sensor element, to measure the operability of the particulate filter. According to the method, the soot load of the sensor element is measured resistively or capacitively using electrodes. The measuring voltage of the sensor element is controlled depending on at least one actual operating parameter of the diesel engine.

Abstract: A lantern-type gear unit, in particular for a camshaft adjuster, comprising at least two meshing gear wheels, a first gear wheel being configured as a lantern gear wheel and a second gear wheel including a lantern gear ring that engages with the lantern gear wheel. The lantern gear ring comprises at least one first annular bolt holder and a plurality of bolts arranged on the boundary of the bolt holder. The annular bolt holder has, together with the bolts, a circumferential contour that is overlap-free with respect to the lantern gear wheel in an axially parallel direction, so that the annular bolt holder can, together with the bolts, be assembled with the lantern gear wheel in an axially parallel direction. A camshaft adjuster for an internal combustion engine comprising such a lantern-type gear unit is also provided.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a metal contact structure, an electrically conductive capping layer formed on the metal contact structure, and a conductive via electrically connected to the metal contact structure through the electrically conductive capping layer.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes forming a metal contact structure that is electrically connected to a device. A capping layer is selectively formed on the metal contact structure, and an interlayer dielectric material is deposited over the capping layer. A metal hard mask is deposited and patterned over the interlayer dielectric material to define an exposed region of the interlayer dielectric material. The method etches the exposed region of the interlayer dielectric material to expose at least a portion of the capping layer. The method includes removing the metal hard mask with an etchant while the capping layer physically separates the metal contact structure from the etchant. A metal is deposited to form a conductive via electrically connected to the metal contact structure through the capping layer.

Abstract: When forming complex metallization systems on the basis of copper, the very last metallization layer may receive contact regions on the basis of copper, the surface of which may be passivated on the basis of a dedicated protection layer, which may thus allow the patterning of the passivation layer stack prior to shipping the device to a remote manufacturing site. Hence, the protected contact surface may be efficiently re-exposed in the remote manufacturing site on the basis of an efficient non-masked wet chemical etch process.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes forming a metal contact structure that is electrically connected to a device. A capping layer is selectively formed on the metal contact structure, and an interlayer dielectric material is deposited over the capping layer. A metal hard mask is deposited and patterned over the interlayer dielectric material to define an exposed region of the interlayer dielectric material. The method etches the exposed region of the interlayer dielectric material to expose at least a portion of the capping layer. The method includes removing the metal hard mask with an etchant while the capping layer physically separates the metal contact structure from the etchant. A metal is deposited to form a conductive via electrically connected to the metal contact structure through the capping layer.

Abstract: When forming sophisticated transistors requiring an embedded semiconductor alloy, the cavities may be formed with superior uniformity on the basis of, for instance, crystallographically anisotropic etch steps by providing a uniform oxide layer in order to reduce process related fluctuations or queue time variations. The uniform oxide layer may be formed on the basis of an APC control regime.

Abstract: Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises performing at least one etching process to reduce a thickness of a P-active region of a semiconducting substrate to thereby define a recessed P-active region, performing a process in a process chamber to selectively form an as-deposited layer of a semiconductor material on the recessed P-active region, wherein the step of performing the at least one etching process is performed outside of the process chamber, and performing an etching process in the process chamber to reduce a thickness of the as-deposited layer of semiconductor material.

Abstract: A method for treating a semiconductor device includes dissolving an inert gas species in a wet chemical cleaning solution and treating a material layer of a semiconductor device with the wet chemical cleaning solution in ambient atmosphere. The inert gas species is oversaturated in the wet chemical cleaning solution in the ambient atmosphere.