Abstract: Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises performing at least one etching process to reduce a thickness of a P-active region of a semiconducting substrate to thereby define a recessed P-active region, performing a process in a process chamber to selectively form an as-deposited layer of a semiconductor material on the recessed P-active region, wherein the step of performing the at least one etching process is performed outside of the process chamber, and performing an etching process in the process chamber to reduce a thickness of the as-deposited layer of semiconductor material.

Abstract: A method for treating a semiconductor device includes dissolving an inert gas species in a wet chemical cleaning solution and treating a material layer of a semiconductor device with the wet chemical cleaning solution in ambient atmosphere. The inert gas species is oversaturated in the wet chemical cleaning solution in the ambient atmosphere.

Abstract: A soot sensor for the detection of soot particles in an exhaust gas flow, having interdigitally engaged measurement electrodes applied on a substrate. An electrical resistance between the measurement electrodes is a measure of soot load of the exhaust gas flow. The measurement electrodes are divided into two regions, a first region in which no soot particles can be deposited and a second region where soot particles are deposited from the exhaust gas flow. The first region and the second region are exposed simultaneously to the other conditions prevailing in the exhaust gas flow.

Abstract: A method for performing on-board functional diagnostics on a soot sensor of a vehicle and/or for detecting further components in the soot in a motor vehicle having an internal combustion engine. The soot sensor is electrically connected to an evaluation circuit with is permanently installed in the motor vehicle. In order to specify a method for performing functional diagnostics on a soot sensor and/or for detecting further components in the soot, with which method it is possible to detect a faulty soot sensor and/or further components in the soot in a cost-effective way, the evaluation circuit measures the temperature coefficient of the soot sensor and detects the defectiveness of the soot sensor and/or the presence of further components in the soot on the basis of the temperature coefficient of the soot sensor.

Abstract: CMOS devices are enhanced by forming a recess in the positive channel for depositing SiGe. Embodiments include providing a positive channel region and a negative channel region in a silicon substrate for a CMOS device, with an STI region therebetween; removing a native oxide from above the positive channel region to expose a silicon substrate; forming a recess in the silicon substrate in the positive channel region adjacent the STI region; and depositing SiGe in the recess in the positive channel region, where an upper surface of the SiGe is substantially level with an upper surface of the negative channel region.

Abstract: A method for operating a soot sensor in the exhaust gas tract of an internal combustion engine. The soot sensor includes an inter-digital electrode structure to which a measurement voltage is applied. Soot particles from the exhaust gas flow deposit themselves on the inter-digital electrode structure and an measuring current is evaluated as a measurement for the soot concentration of the soot sensor. A heating element for burning clean the inter-digital electrode structure is provided. The method for operating the soot sensor has good measurement results and the shortest possible idle time. To this end, a point in time for burning clean the soot sensor is determined in accordance with the operational state of the internal combustion engine and then, the burning clean of the inter-digital electrode structure starts by heating the soot sensor by the heating element.

Abstract: A method for on-vehicle functional diagnosis of a soot sensor and/or for detecting further components in the soot in a motor vehicle having an internal combustion engine, the soot sensor connected electrically to an evaluation circuit. To specify a method for functional diagnosis of a soot sensor and/or for detecting further components in the soot, by which it is possible to detect a faulty soot sensor and/or further components in the soot in an economical manner, the evaluation circuit measures a temperature coefficient of the soot sensor and detects the faultiness of the soot sensor and/or the presence of further components in the soot from the temperature coefficient of the soot sensor.

Abstract: When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, pronounced loss of the interlayer dielectric material may be avoided by inserting at least one surface modification process, for instance in the form of a nitridation process. In this manner, leakage paths caused by metal residues formed in the interlayer dielectric material may be significantly reduced.

Abstract: A magnetized nut for fastening a compressor wheel of an exhaust turbocharger to a turbo shaft. The nut has a base body made of a non-magnetic material forming a hollow space for accommodating a magnetic material, and a method for the production of the magnetized nut. In order to provide a magnetized nut that is produced in a simple and cost-effective manner and ensures as equal a distribution of mass as possible with regard to the rotational axis of the nut, the magnetic material is introduced into the hollow space using injection molding.

Abstract: A diagnostic method for a soot sensor that lies in an exhaust gas system of an internal combustion engine. First, a first temperature in the exhaust gas system is detected, and it is determined whether the detected first temperature is below a 100° C. If this is the case, a first measured value is then detected with the soot sensor and compared with a specifiable threshold value. If the first measured value exceeds the specifiable threshold value, the soot sensor is determined to be operating properly.

Abstract: In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.

Abstract: Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises performing at least one etching process to reduce a thickness of a P-active region of a semiconducting substrate to thereby define a recessed P-active region, performing a process in a process chamber to selectively form an as-deposited layer of a semiconductor material on the recessed P-active region, wherein the step of performing the at least one etching process is performed outside of the process chamber, and performing an etching process in the process chamber to reduce a thickness of the as-deposited layer of semiconductor material.

Abstract: A particle sensor arranged in an exhaust duct such that particles from the exhaust-gas flow accumulate on and/or between at least two sensor electrodes when a voltage greater than a limit voltage is applied between the two sensor electrodes and substantially no particles accumulate if the voltage is lower than the limit voltage. During a first time period, a first voltage greater than the limit voltage is applied between the sensor electrodes. During a second time period, a second voltage, lower than the limit voltage, is applied between the sensor electrodes, and/or the particle sensor is heated to a predefined temperature, such that substantially no particles accumulate on and/or between the at least two sensor electrodes. Following the second time period, a third voltage greater than the limit voltage is applied between the sensor electrodes.

Abstract: When forming complex metallization systems on the basis of copper, the very last metallization layer may receive contact regions on the basis of copper, the surface of which may be passivated on the basis of a dedicated protection layer, which may thus allow the patterning of the passivation layer stack prior to shipping the device to a remote manufacturing site. Hence, the protected contact surface may be efficiently re-exposed in the remote manufacturing site on the basis of an efficient non-masked wet chemical etch process.

Abstract: A threshold adjusting semiconductor material, such as a silicon/germanium alloy, may be provided selectively for one type of transistors on the basis of enhanced deposition uniformity. For this purpose, the semiconductor alloy may be deposited on the active regions of any transistors and may subsequently be patterned on the basis of a highly controllable patterning regime. Consequently, threshold variability may be reduced.

Abstract: When forming sophisticated transistors requiring an embedded semiconductor alloy, the cavities may be formed with superior uniformity on the basis of, for instance, crystallographically anisotropic etch steps by providing a uniform oxide layer in order to reduce process related fluctuations or queue time variations. The uniform oxide layer may be formed on the basis of an APC control regime.

Abstract: A method and device for measuring the soot load in the exhaust gas systems of diesel engines using a sensor which is mounted downstream of a particulate filter and comprises a sensor element, to measure the operability of the particulate filter. According to the method, the soot load of the sensor element is measured resistively or capacitively using electrodes. The measuring voltage of the sensor element is controlled depending on at least one actual operating parameter of the diesel engine.

Abstract: A strain-inducing semiconductor alloy may be formed on the basis of cavities which may have a non-rectangular shape, which may be maintained even during corresponding high temperature treatments by providing an appropriate protection layer, such as a silicon dioxide material. Consequently, a lateral offset of the strain-inducing semiconductor material may be reduced, while nevertheless providing a sufficient thickness of corresponding offset spacers during the cavity etch process, thereby preserving gate electrode integrity. For instance, P-channel transistors may have a silicon/germanium alloy with a hexagonal shape, thereby significantly enhancing the overall strain transfer efficiency.

Abstract: In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence.

Abstract: In the process sequence for replacing conventional gate electrode structures by high-k metal gate structures, the number of additional masking steps may be maintained at a low level, for instance by using highly selective etch steps, thereby maintaining a high degree of compatibility with conventional CMOS techniques. Furthermore, the techniques disclosed herein enable compatibility to front-end process techniques and back-end process techniques, thereby allowing the integration of well-established strain-inducing mechanisms in the transistor level as well as in the contact level.