Abstract: A radiation-emitting semiconductor component with a layer structure (12) which includes a photon-emitting active layer (16), an n-doped cladding layer (14) and a p-doped cladding layer (18), a contact connected to the n-doped cladding layer (14) and a mirror layer (20) connected to the p-doped cladding layer (18). The mirror layer (20) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.

Abstract: For semiconductor chips (1) using thin film technology, an active layer sequence (20) is applied to a growth substrate (3), on which a reflective electrically conductive contact material layer (40) is then formed. The active layer sequence is patterned to form active layer stacks (2), and reflective electrically conductive contact material layer (40) is patterned to be located on each active layer stack (2). Then, a flexible, electrically conductive foil (6) is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

Abstract: An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

Abstract: A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.

Abstract: A method for producing a light-emitting semiconductor component having a thin-film layer sequence (14), in which a photon-emitting active zone (17) is formed. The thin-film layer sequence (14) is formed on a growth substrate. A reflection contact layer (40) is formed having contact with the thin-film layer sequence. A diffusion barrier layer (42) is applied to the reflection contact layer (40), and a solder contact layer (44) is applied to the diffusion barrier layer (42). The reflection contact layer (40), after it has been formed and before the diffusion barrier layer (42) is applied, is subjected to heat treatment for the purpose of producing an ohmic contact, and the surface of the reflection contact layer (40) is cleaned with a first etching solution after the heat treatment. As an alternative, the reflection contact layer (40) is subjected to heat treatment after the application of the solder contact layer (44) to the diffusion barrier layer (42) for the purpose of producing an ohmic contact.

Abstract: A carrier layer (1) for a semiconductor layer sequence comprising an electrical insulation layer (2) containing AlN or a ceramic. Furthermore a method for producing semiconductor chips is described.

Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Abstract: A method for producing a light-emitting semiconductor component having a thin-film layer sequence (14), in which a photon-emitting active zone (17) is formed. The thin-film layer sequence (14) is formed on a growth substrate. A reflection contact layer (40) is formed having contact with the thin-film layer sequence. A diffusion barrier layer (42) is applied to the reflection contact layer (40), and a solder contact layer (44)is applied to the diffusion barrier layer (42). The reflection contact layer (40), after it has been formed and before the diffusion barrier layer (42) is applied, is subjected to heat treatment for the purpose of producing an ohmic contact, and the surface of the reflection contact layer (40) is cleaned with a first etching solution after the heat treatment. As an alternative, the reflection contact layer (40) is subjected to heat treatment after the application of the solder contact layer (44) to the diffusion barrier layer (42) for the purpose of producing an ohmic contact.

Abstract: An electrical contact for an optoelectronic device which includes a mirror layer (2) of a metal or a metal alloy, a protective layer (3), which serves for reducing the corrosion of the mirror layer (2), a barrier layer (4), a coupling layer (5), and a solder layer (8). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.

Abstract: A method is provided for fabricating a useful layer containing at least one semiconductor layer, in which the useful layer is separated from a carrier. In this case, the useful layer is applied to the carrier and an auxiliary carrier is applied to that side of the useful layer that is remote from the carrier by a connecting layer at a joining temperature. Afterward, the carrier is stripped away at a temperature that is greater than or equal to the joining temperature and is less than the melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier is removed from the carrier.

Abstract: An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

Abstract: A method is described for the production of a suitable substrate for the subsequent growth of a mono-crystalline diamond layer. This method includes the following steps: Selection of a substrate of a mono-crystalline material having a fixed lattice constant (aSi) or with a layer consisting of such a material. Manufacture of a strained silicon layer with foreign material atoms incorporated at substitutional lattice sites on the mono-crystalline material of the substrate. Transfer of the strained layer into an at least partly relaxed state in which it adopts by relaxation and through the selected foreign material concentration a lattice constant (aSi(C) which satisfies the condition n.aSi(C)=m.aD, wherein n and m are integers and aD is the lattice constant of diamond, with the relaxed layer forming the substrate or substrate surface for the epitaxial growth.

Abstract: An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.