Abstract: A sinterable and/or fusible ceramic mass is disclosed, having a long-term stable compound of crystalline phases of apatite, wollastonite, titanite and optionally cristobalite, which is stabilized by a glass phase, and a production process therefor. The ceramic mass can be obtained by sintering a mixture comprising at least the constituents SiO2, CaO, P2O5, MgO, CaF2 and TiO2, on their own or in combination with at least one alkali oxide, the alkali oxide being chosen from NaO2 and K2O. The invention further relates to uses of the sintered material in the form of shaped articles for strengthening, cleaning, roughening or polishing surfaces of medical implants or as a final prosthesis.

Abstract: A sinterable and/or fusible ceramic mass is disclosed, having a long-term stable compound of crystalline phases of apatite, wollastonite, titanite and optionally cristobalite, which is stabilized by a glass phase, and a production process therefor. The ceramic mass can be obtained by sintering a mixture comprising at least the constituents SiO2, CaO, P2O5, MgO, CaF2 and TiO2, on their own or in combination with at least one alkali oxide, the alkali oxide being chosen from NaO2 and K2O. The invention further relates to uses of the sintered material in the form of shaped articles for strengthening, cleaning, roughening or polishing surfaces of medical implants or as a final prosthesis.

Abstract: An integrated circuit includes a semiconductor body with a first semiconductor layer and a second semiconductor layer arranged adjacent the first semiconductor layer in a vertical direction of the semiconductor body. The integrated circuit further includes a switching device with a control terminal and a load path between a first load terminal and a second load terminal, and a rectifier element connected in parallel with at least one section of the load path. The switching device is integrated in the first semiconductor layer and the rectifier element is integrated in the second semiconductor layer.

Abstract: The present invention relates to an X-ray amorphous-crystalline material with high solubility which can be used as a bioactive bone replacement material and as a substrate material in biotechnology. The new material comprising crystalline and X-ray amorphous phases is characterized in that according to 31P-NMR measurements, it contains Q0-groups of orthophosphate and Q1-groups of diphosphate, the orthophosphates or Q0-groups making up 70 to 99.9% by weight relative to the total phosphorus content of the finished material and the diphosphates or Q1-groups making up 0.1 to 30% by weight relative to the total phosphorus content of the finished material, and that according to X-ray diffractometric measurements and relative to the total weight of the finished material, 30 to 99.9% by weight of a main crystal phase consisting of Ca2K1?xNa1+x(PO4)2, where x=0.1 to 0.9, is contained in the bone replacement material and 0.

Abstract: The present invention relates to an X-ray amorphous-crystalline material with high solubility which can be used as a bioactive bone replacement material and as a substrate material in biotechnology. The new material comprising crystalline and X-ray amorphous phases is characterized in that according to 31P-NMR measurements, it contains Q0-groups of orthophosphate and Q1-groups of diphosphate, the ortho-phosphates or Q0-groups making up 70 to 99.9% by weight relative to the total phosphorus content of the finished material and the diphosphates or Q1-groups making up 0.1 to 30% by weight relative to the total phosphorus content of the finished material, and that according to X-ray diffractometric measurements and relative to the total weight of the finished material, 30 to 99.9% by weight of a main crystal phase consisting of Ca2K1?xNa1+x(PO4)2, where x=0.1 to 0.9, is contained in the bone replacement material and 0.

Abstract: The present invention relates to an X-ray amorphous-crystalline material with high solubility which can be used as a bioactive bone replacement material and as a substrate material in biotechnology. The new material comprising crystalline and X-ray amorphous phases is characterized in that according to 31P-NMR measurements, it contains Q0-groups of orthophosphate and Q1-groups of diphosphate, the ortho-phosphates or Q0-groups making up 70 to 99.9% by weight relative to the total phosphorus content of the finished material and the diphosphates or Q1-groups making up 0.1 to 30% by weight relative to the total phosphorus content of the finished material, and that according to X-ray diffractometric measurements and relative to the total weight of the finished material, 30 to 99.9% by weight of a main crystal phase consisting of Ca2K1?xNa1+x(PO4)2, where x=0.1 to 0.9, is contained in the bone replacement material and 0.

Abstract: A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in weight to the dielectric layer, forming a non-conductive oxide or nitride having an enthalpy lower than the enthalpy of the first dielectric material such that a leakage current along grain boundaries of the first dielectric material is reduced.

Abstract: The present invention relates to a material with orthophosphate and having a high solubility which can be used as a bioactive bone replacement material and as a substrate material in biotechnology. According to 31P-NMR measurements, the new material comprises Q0-groups of orthophosphate and Q1-groups of diphosphate, the orthophosphates or Q0-groups making up 65 to 99.9% by weight relative to the total phosphorus content of the finished material and the diphosphates or Q1-groups making up 0.1 to 35% by weight relative to the total phosphorus content of the finished material, and wherein according to X-ray diffractometric measurements and relative to the total weight of the finished material, 35 to 99.9% by weight of a main crystal phase consisting of Ca10Na(PO4)7, Ca10K(PO4)7, mixtures thereof or mixed crystals according to the general formula Ca10KxNa1?x(PO4)7, where x=0 to 1, is contained in the bone replacement material and 0.

Abstract: An integrated semiconductor memory includes at least one memory cell having at least one transistor which forms an inversion channel in the switched-on state. The transistor comprises a structure element having a first source/drain region, a second source/drain region, and a region arranged between the first and the second source/drain region. The structure element is insulated from a semiconductor substrate by an insulation layer, a gate dielectric is arranged on the structure element, and a word line is arranged on the gate dielectric.

Abstract: A storage capacitor includes a first electrode layer, second electrode layer and a dielectric interlayer arranged between the first electrode layer and the second electrode layer. The dielectric interlayer contains a high-k dielectric and at least one silicon-containing component.

Abstract: The invention relates to an integrated semiconductor memory with at least one memory cell having at least one transistor which forms an inversion channel in the switched-on state. The transistor comprises a structure element having a first source/drain region, a second source/drain region and a region arranged between the first and the second source/drain region, the structure element is insulated from a semiconductor substrate by an insulation layer, a gate dielectric being arranged on the structure element and a word line being arranged on the gate dielectric.

Abstract: The present invention relates to a glass used as a sintering aid for a resorbable molded body containing calcium phosphate as well as to a method for manufacturing said molded body. According to the invention, the material is ?-tricalcium phosphate and the glass has a chemical composition of 68–78% by weight SiO2, 5–12% by weight MgO and 12–27% by weight Na2O. The aforesaid molded body is manufactured by melting said glass, grinding it until a grain size D50 of 0.7–2 ?m is achieved and mixing it with ?-tricalcium phosphate having a grain size D50 of 1–7.5 ?m, giving the mixture the desired shape and producing the molded body by sintering said mixture at between 1,150 and 1,350° C., wherein the grain size of ?-TCP must not be smaller than that of the glass.

Abstract: A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in weight to the dielectric layer, forming a non-conductive oxide or nitride having an enthalpy lower than the enthalpy of the first dielectric material such that a leakage current along grain boundaries of the first dielectric material is reduced.

Abstract: The invention relates to an integrated semiconductor memory with at least one memory cell having at least one transistor which forms an inversion channel in the switched-on state. The transistor comprises a structure element having a first source/drain region, a second source/drain region and a region arranged between the first and the second source/drain region, the structure element is insulated from a semiconductor substrate by an insulation layer, a gate dielectric being arranged on the structure element and a word line being arranged on the gate dielectric.

Abstract: The invention relates to an integrated semiconductor memory with at least one memory cell having at least one transistor which forms an inversion channel in the switched-on state. The transistor comprises a structure element having a first source/drain region, a second source/drain region and a region arranged between the first and the second source/drain region, the structure element is insulated from a semiconductor substrate by an insulation layer, a gate dielectric being arranged on the structure element and a word line being arranged on the gate dielectric.

Abstract: Electronic data memory device for a high read current The invention provides a memory device arranged on a substrate (401) and having at least one memory cell (100) The memory cell comprises a storage capacitor (200) for storing an electrical charge and a selection transistor (300) for selecting the memory cell (100). The selection transistor comprises a first conduction electrode (301), a second conduction electrode (302) and a control electrode (303) , the control electrode (303) being provided by a gate unit (400) having a fin (405) projecting from the substrate (401), which fin is surrounded by a gate oxide layer (406) and a gate electrode layer (403) in such a way that first and second gate elements (408a, 408b) are provided at opposite lateral areas of the fin (405), a third gate element (408c) being provided at an area of the fin (405) that is parallel to the surface of the substrate (401).

Abstract: An integrated semiconductor memory is disclosed having selection transistors which can be formed at a respective ridge. The ridge can be arranged on an insulation layer. In the ridge the first source/drain region can be formed at one lateral end of the ridge and the second source/drain region can be formed at another lateral end of the ridge. The longitudinal sides of the ridge and a top side of the ridge can be covered with a layer stack including a gate dielectric and a gate electrode. High write-read currents can be achieved in the on state of the selection transistors and leakage currents occurring in the off state can be reduced.

Abstract: The invention relates to an integrated semiconductor memory (10) with at least one memory cell (1) having at least one transistor (3) which forms an inversion channel (34) in the switched-on state, the transistor (3) having a structure element (4) having a first source/drain region (5), a second source/drain region (6) and a region (4b) arranged between the first (5) and the second source/drain region (6), the structure element (4) being insulated from a semiconductor substrate (20) by an insulation layer (11), a gate dielectric (9) being arranged on the structure element (4) and a word line (16) being arranged on the gate dielectric (9), the gate dielelctric (9) being a high-resistance tunnel contact having a first region (31), the layer thickness (d) of which is so small that, in the switched-off state of the transistor (3), majority charge carriers generated thermally in the structure element (4) pass into the word line (16) by direct tunneling through the gate dielectric (9), and the entire region (4b) of

Abstract: The present invention relates to a glass used as a sintering aid for a resorbable moulded body containing calcium phosphate as well as to a method for manufacturing said moulded body. According to the invention, the material is &bgr;-tricalcium phosphate and the glass has a chemical composition of 68-78% by weight SiO2, 5-12% by weight MgO and 12-27% by weight Na2O. The aforesaid moulded body is manufactured by melting said glass, grinding it until a grain size D50 of 0.7-2 &mgr;m is achieved and mixing it with &bgr;-tricalcium phosphate having a grain size D50 of 1-7.5 &mgr;m, giving the mixture the desired shape and producing the moulded body by sintering said mixture at between 1,150 and 1,350° C., wherein the grain size of &bgr;-TCP must not be smaller than that of the glass.

Abstract: The present invention relates to an X-ray amorphous-crystalline material with high solubility which can be used as a bioactive bone replacement material and as a substrate material in biotechnology. The new material comprising crystalline and X-ray amorphous phases is characterized in that according to 31P-NMR measurements, it contains Q0-groups of orthophosphate and Q1-groups of diphosphate, the ortho-phosphates or Q0-groups making up 70 to 99.9% by weight relative to the total phosphorus content of the finished material and the diphosphates or Q1-groups making up 0.1 to 30% by weight relative to the total phosphorus content of the finished material, and that according to X-ray diffractometric measurements and relative to the total weight of the finished material, 30 to 99.9% by weight of a main crystal phase consisting of Ca2K1−xNa1+x(PO4)2, where x=0.1 to 0.9, is contained in the bone replacement material and 0.