Patents by Inventor Andreas Spitzer

Andreas Spitzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9662215
    Abstract: A sinterable and/or fusible ceramic mass is disclosed, having a long-term stable compound of crystalline phases of apatite, wollastonite, titanite and optionally cristobalite, which is stabilized by a glass phase, and a production process therefor. The ceramic mass can be obtained by sintering a mixture comprising at least the constituents SiO2, CaO, P2O5, MgO, CaF2 and TiO2, on their own or in combination with at least one alkali oxide, the alkali oxide being chosen from NaO2 and K2O. The invention further relates to uses of the sintered material in the form of shaped articles for strengthening, cleaning, roughening or polishing surfaces of medical implants or as a final prosthesis.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: May 30, 2017
    Assignee: Bundesrepublik Deutschland, Vertreten durch das Bundesministerium fuer Wirtschaft und Technologie, Dieses Vertreten durch den Praesidenten der BAM, Bundesanstalt fuer Materialforschung und—Pruefung
    Inventors: Georg Berger, Andrea Spitzer, Dagmar Nicolaides, Jens Guenster, Heidi Marx
  • Publication number: 20160058558
    Abstract: A sinterable and/or fusible ceramic mass is disclosed, having a long-term stable compound of crystalline phases of apatite, wollastonite, titanite and optionally cristobalite, which is stabilized by a glass phase, and a production process therefor. The ceramic mass can be obtained by sintering a mixture comprising at least the constituents SiO2, CaO, P2O5, MgO, CaF2 and TiO2, on their own or in combination with at least one alkali oxide, the alkali oxide being chosen from NaO2 and K2O. The invention further relates to uses of the sintered material in the form of shaped articles for strengthening, cleaning, roughening or polishing surfaces of medical implants or as a final prosthesis.
    Type: Application
    Filed: February 12, 2014
    Publication date: March 3, 2016
    Applicant: Bundesrepublik Deutschland, vertreten durch das Bundesministerium fuer Wirtschaft und Technologie
    Inventors: Georg Berger, Andrea Spitzer, Dagmar Nicolaides, Jens Guenster, Heidi Marx
  • Publication number: 20130264654
    Abstract: An integrated circuit includes a semiconductor body with a first semiconductor layer and a second semiconductor layer arranged adjacent the first semiconductor layer in a vertical direction of the semiconductor body. The integrated circuit further includes a switching device with a control terminal and a load path between a first load terminal and a second load terminal, and a rectifier element connected in parallel with at least one section of the load path. The switching device is integrated in the first semiconductor layer and the rectifier element is integrated in the second semiconductor layer.
    Type: Application
    Filed: April 6, 2012
    Publication date: October 10, 2013
    Applicant: INFINEON TECHNOLOGIES DRESDEN GMBH
    Inventors: Rolf Weis, Andreas Spitzer
  • Patent number: 8182832
    Abstract: The present invention relates to an X-ray amorphous-crystalline material with high solubility which can be used as a bioactive bone replacement material and as a substrate material in biotechnology. The new material comprising crystalline and X-ray amorphous phases is characterized in that according to 31P-NMR measurements, it contains Q0-groups of orthophosphate and Q1-groups of diphosphate, the orthophosphates or Q0-groups making up 70 to 99.9% by weight relative to the total phosphorus content of the finished material and the diphosphates or Q1-groups making up 0.1 to 30% by weight relative to the total phosphorus content of the finished material, and that according to X-ray diffractometric measurements and relative to the total weight of the finished material, 30 to 99.9% by weight of a main crystal phase consisting of Ca2K1?xNa1+x(PO4)2, where x=0.1 to 0.9, is contained in the bone replacement material and 0.
    Type: Grant
    Filed: April 15, 2009
    Date of Patent: May 22, 2012
    Assignee: Bam Bundesanstalt fur Materialforschung und-Prufung
    Inventors: Georg Berger, Andrea Spitzer, Christian Jäger, Jutta Pauli, Renate Gildenhaar
  • Publication number: 20090197972
    Abstract: The present invention relates to an X-ray amorphous-crystalline material with high solubility which can be used as a bioactive bone replacement material and as a substrate material in biotechnology. The new material comprising crystalline and X-ray amorphous phases is characterized in that according to 31P-NMR measurements, it contains Q0-groups of orthophosphate and Q1-groups of diphosphate, the ortho-phosphates or Q0-groups making up 70 to 99.9% by weight relative to the total phosphorus content of the finished material and the diphosphates or Q1-groups making up 0.1 to 30% by weight relative to the total phosphorus content of the finished material, and that according to X-ray diffractometric measurements and relative to the total weight of the finished material, 30 to 99.9% by weight of a main crystal phase consisting of Ca2K1?xNa1+x(PO4)2, where x=0.1 to 0.9, is contained in the bone replacement material and 0.
    Type: Application
    Filed: April 15, 2009
    Publication date: August 6, 2009
    Applicant: BAM BUNDESANSTALT FUER MATERIALFORSCHUNG UND PRUEFUNG
    Inventors: Georg BERGER, Andrea SPITZER, Christian JAGER, Jutta PAULI, Renate GILDENHAAR
  • Patent number: 7547448
    Abstract: The present invention relates to an X-ray amorphous-crystalline material with high solubility which can be used as a bioactive bone replacement material and as a substrate material in biotechnology. The new material comprising crystalline and X-ray amorphous phases is characterized in that according to 31P-NMR measurements, it contains Q0-groups of orthophosphate and Q1-groups of diphosphate, the ortho-phosphates or Q0-groups making up 70 to 99.9% by weight relative to the total phosphorus content of the finished material and the diphosphates or Q1-groups making up 0.1 to 30% by weight relative to the total phosphorus content of the finished material, and that according to X-ray diffractometric measurements and relative to the total weight of the finished material, 30 to 99.9% by weight of a main crystal phase consisting of Ca2K1?xNa1+x(PO4)2, where x=0.1 to 0.9, is contained in the bone replacement material and 0.
    Type: Grant
    Filed: October 20, 2003
    Date of Patent: June 16, 2009
    Assignee: Bam Bundesanstalt fuer Material Forschung und Pruefung
    Inventors: Georg Berger, Andrea Spitzer, Christian Jäger, Jutta Pauli, Renate Gildenhaar
  • Patent number: 7531405
    Abstract: A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in weight to the dielectric layer, forming a non-conductive oxide or nitride having an enthalpy lower than the enthalpy of the first dielectric material such that a leakage current along grain boundaries of the first dielectric material is reduced.
    Type: Grant
    Filed: February 28, 2005
    Date of Patent: May 12, 2009
    Assignee: Qimonds AG
    Inventors: Andreas Spitzer, Elke Erben
  • Patent number: 7459170
    Abstract: The present invention relates to a material with orthophosphate and having a high solubility which can be used as a bioactive bone replacement material and as a substrate material in biotechnology. According to 31P-NMR measurements, the new material comprises Q0-groups of orthophosphate and Q1-groups of diphosphate, the orthophosphates or Q0-groups making up 65 to 99.9% by weight relative to the total phosphorus content of the finished material and the diphosphates or Q1-groups making up 0.1 to 35% by weight relative to the total phosphorus content of the finished material, and wherein according to X-ray diffractometric measurements and relative to the total weight of the finished material, 35 to 99.9% by weight of a main crystal phase consisting of Ca10Na(PO4)7, Ca10K(PO4)7, mixtures thereof or mixed crystals according to the general formula Ca10KxNa1?x(PO4)7, where x=0 to 1, is contained in the bone replacement material and 0.
    Type: Grant
    Filed: October 20, 2003
    Date of Patent: December 2, 2008
    Assignee: BAM Bundesanstalt fuer Materialforschung und-pruefung
    Inventors: Georg Berger, Andrea Spitzer, Christian Jäger, Jutta Pauli, Renate Gildenhaar
  • Publication number: 20070278549
    Abstract: An integrated semiconductor memory includes at least one memory cell having at least one transistor which forms an inversion channel in the switched-on state. The transistor comprises a structure element having a first source/drain region, a second source/drain region, and a region arranged between the first and the second source/drain region. The structure element is insulated from a semiconductor substrate by an insulation layer, a gate dielectric is arranged on the structure element, and a word line is arranged on the gate dielectric.
    Type: Application
    Filed: July 10, 2007
    Publication date: December 6, 2007
    Applicant: QIMONDA AG
    Inventor: Andreas Spitzer
  • Publication number: 20070210367
    Abstract: A storage capacitor includes a first electrode layer, second electrode layer and a dielectric interlayer arranged between the first electrode layer and the second electrode layer. The dielectric interlayer contains a high-k dielectric and at least one silicon-containing component.
    Type: Application
    Filed: November 30, 2006
    Publication date: September 13, 2007
    Applicant: QIMONDA AG
    Inventors: Henry Bernhardt, Thomas Hecht, Michael Stadtmueller, Christian Kapteyn, Uwe Schroder, Yeong-Kwan Kim, Andreas Spitzer
  • Patent number: 7241657
    Abstract: The invention relates to an integrated semiconductor memory with at least one memory cell having at least one transistor which forms an inversion channel in the switched-on state. The transistor comprises a structure element having a first source/drain region, a second source/drain region and a region arranged between the first and the second source/drain region, the structure element is insulated from a semiconductor substrate by an insulation layer, a gate dielectric being arranged on the structure element and a word line being arranged on the gate dielectric.
    Type: Grant
    Filed: November 22, 2005
    Date of Patent: July 10, 2007
    Assignee: Infineon Technologies AG
    Inventor: Andreas Spitzer
  • Patent number: 7148163
    Abstract: The present invention relates to a glass used as a sintering aid for a resorbable molded body containing calcium phosphate as well as to a method for manufacturing said molded body. According to the invention, the material is ?-tricalcium phosphate and the glass has a chemical composition of 68–78% by weight SiO2, 5–12% by weight MgO and 12–27% by weight Na2O. The aforesaid molded body is manufactured by melting said glass, grinding it until a grain size D50 of 0.7–2 ?m is achieved and mixing it with ?-tricalcium phosphate having a grain size D50 of 1–7.5 ?m, giving the mixture the desired shape and producing the molded body by sintering said mixture at between 1,150 and 1,350° C., wherein the grain size of ?-TCP must not be smaller than that of the glass.
    Type: Grant
    Filed: October 20, 2003
    Date of Patent: December 12, 2006
    Assignee: BAM Bundesanstalt fur Materialforschung und-prufung
    Inventors: Georg Berger, Renate Gildenhaar, Andrea Spitzer
  • Publication number: 20060192271
    Abstract: A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in weight to the dielectric layer, forming a non-conductive oxide or nitride having an enthalpy lower than the enthalpy of the first dielectric material such that a leakage current along grain boundaries of the first dielectric material is reduced.
    Type: Application
    Filed: February 28, 2005
    Publication date: August 31, 2006
    Applicant: Infineon Technologies AG
    Inventors: Andreas Spitzer, Elke Erben
  • Publication number: 20060071261
    Abstract: The invention relates to an integrated semiconductor memory with at least one memory cell having at least one transistor which forms an inversion channel in the switched-on state. The transistor comprises a structure element having a first source/drain region, a second source/drain region and a region arranged between the first and the second source/drain region, the structure element is insulated from a semiconductor substrate by an insulation layer, a gate dielectric being arranged on the structure element and a word line being arranged on the gate dielectric.
    Type: Application
    Filed: November 22, 2005
    Publication date: April 6, 2006
    Inventor: Andreas Spitzer
  • Patent number: 6995418
    Abstract: The invention relates to an integrated semiconductor memory with at least one memory cell having at least one transistor which forms an inversion channel in the switched-on state. The transistor comprises a structure element having a first source/drain region, a second source/drain region and a region arranged between the first and the second source/drain region, the structure element is insulated from a semiconductor substrate by an insulation layer, a gate dielectric being arranged on the structure element and a word line being arranged on the gate dielectric.
    Type: Grant
    Filed: May 7, 2004
    Date of Patent: February 7, 2006
    Assignee: Infineon Technologies, AG
    Inventor: Andreas Spitzer
  • Publication number: 20060022248
    Abstract: Electronic data memory device for a high read current The invention provides a memory device arranged on a substrate (401) and having at least one memory cell (100) The memory cell comprises a storage capacitor (200) for storing an electrical charge and a selection transistor (300) for selecting the memory cell (100). The selection transistor comprises a first conduction electrode (301), a second conduction electrode (302) and a control electrode (303) , the control electrode (303) being provided by a gate unit (400) having a fin (405) projecting from the substrate (401), which fin is surrounded by a gate oxide layer (406) and a gate electrode layer (403) in such a way that first and second gate elements (408a, 408b) are provided at opposite lateral areas of the fin (405), a third gate element (408c) being provided at an area of the fin (405) that is parallel to the surface of the substrate (401).
    Type: Application
    Filed: June 27, 2005
    Publication date: February 2, 2006
    Inventors: Bjorn Fischer, Franz Hofmann, Richard Luyken, Andreas Spitzer
  • Patent number: 6992345
    Abstract: An integrated semiconductor memory is disclosed having selection transistors which can be formed at a respective ridge. The ridge can be arranged on an insulation layer. In the ridge the first source/drain region can be formed at one lateral end of the ridge and the second source/drain region can be formed at another lateral end of the ridge. The longitudinal sides of the ridge and a top side of the ridge can be covered with a layer stack including a gate dielectric and a gate electrode. High write-read currents can be achieved in the on state of the selection transistors and leakage currents occurring in the off state can be reduced.
    Type: Grant
    Filed: December 5, 2003
    Date of Patent: January 31, 2006
    Assignee: Infineon Technologies, AG
    Inventors: Gerhard Enders, Andreas Spitzer
  • Publication number: 20050041495
    Abstract: The invention relates to an integrated semiconductor memory (10) with at least one memory cell (1) having at least one transistor (3) which forms an inversion channel (34) in the switched-on state, the transistor (3) having a structure element (4) having a first source/drain region (5), a second source/drain region (6) and a region (4b) arranged between the first (5) and the second source/drain region (6), the structure element (4) being insulated from a semiconductor substrate (20) by an insulation layer (11), a gate dielectric (9) being arranged on the structure element (4) and a word line (16) being arranged on the gate dielectric (9), the gate dielelctric (9) being a high-resistance tunnel contact having a first region (31), the layer thickness (d) of which is so small that, in the switched-off state of the transistor (3), majority charge carriers generated thermally in the structure element (4) pass into the word line (16) by direct tunneling through the gate dielectric (9), and the entire region (4b) of
    Type: Application
    Filed: May 7, 2004
    Publication date: February 24, 2005
    Inventor: Andreas Spitzer
  • Publication number: 20040235637
    Abstract: The present invention relates to a glass used as a sintering aid for a resorbable moulded body containing calcium phosphate as well as to a method for manufacturing said moulded body. According to the invention, the material is &bgr;-tricalcium phosphate and the glass has a chemical composition of 68-78% by weight SiO2, 5-12% by weight MgO and 12-27% by weight Na2O. The aforesaid moulded body is manufactured by melting said glass, grinding it until a grain size D50 of 0.7-2 &mgr;m is achieved and mixing it with &bgr;-tricalcium phosphate having a grain size D50 of 1-7.5 &mgr;m, giving the mixture the desired shape and producing the moulded body by sintering said mixture at between 1,150 and 1,350° C., wherein the grain size of &bgr;-TCP must not be smaller than that of the glass.
    Type: Application
    Filed: October 20, 2003
    Publication date: November 25, 2004
    Inventors: Georg Berger, Renate Gildenhaar, Andrea Spitzer
  • Publication number: 20040228927
    Abstract: The present invention relates to an X-ray amorphous-crystalline material with high solubility which can be used as a bioactive bone replacement material and as a substrate material in biotechnology. The new material comprising crystalline and X-ray amorphous phases is characterized in that according to 31P-NMR measurements, it contains Q0-groups of orthophosphate and Q1-groups of diphosphate, the ortho-phosphates or Q0-groups making up 70 to 99.9% by weight relative to the total phosphorus content of the finished material and the diphosphates or Q1-groups making up 0.1 to 30% by weight relative to the total phosphorus content of the finished material, and that according to X-ray diffractometric measurements and relative to the total weight of the finished material, 30 to 99.9% by weight of a main crystal phase consisting of Ca2K1−xNa1+x(PO4)2, where x=0.1 to 0.9, is contained in the bone replacement material and 0.
    Type: Application
    Filed: October 20, 2003
    Publication date: November 18, 2004
    Inventors: Georg Berger, Andrea Spitzer, Christian Jager, Jutta Pauli, Renate Gildenhaar