Abstract: The present invention relates to a material with orthophosphate and having a high solubility which can be used as a bioactive bone replacement material and as a substrate material in biotechnology. According to 31P-NMR measurements, the new material comprises Q0-groups of orthophosphate and Q1-groups of diphosphate, the ortho-phosphates or Q0-groups making up 65 to 99.9% by weight relative to the total phosphorus content of the finished material and the diphosphates or Q1-groups making up 0.1 to 35% by weight relative to the total phosphorus content of the finished material, and wherein according to X-ray diffractometric measurements and relative to the total weight of the finished material, 35 to 99.9% by weight of a main crystal phase consisting of Ca10Na(PO4)7, Ca10K(PO4)7, mixtures thereof or mixed crystals according to the general formula Ca10KxNa1−x(PO4)7, where x=0 to 1, is contained in the bone replacement material and 0.

Abstract: An integrated semiconductor memory having selection transistors can be formed at a web. The web can be arranged on an insulation layer. The first source/drain region can be arranged on the insulation layer at one lateral end of the web and the second source/drain region can be arranged on the insulation layer at another lateral end of the web. The longitudinal sides of the web and a top side of the web can be covered with a layer sequence including a gate dielectric and a gate electrode. High write-read currents can be achieved in the on state of the selection transistors and leakage currents occurring in the off state can be reduced.

Abstract: In addition to the starting gases containing the elements of the solid-state layer to be deposited, at least one auxiliary substance is introduced into the reaction space of a reactor chamber. This auxiliary substance contains molecules which have a dipole moment and which have the property of briefly attaching themselves during the deposition process to the substrate surface with a dipole moment perpendicular to the substrate surface. In this way, the crystal structure of the solid-state layer to be grown on is dictated.

Abstract: In producing a silicon capacitor, hole structures (2) are created in a silicon substrate (1), at the surface of which structures a conductive zone (3) is created by doping and whose surface is provided with a dielectric layer (4) and a conductive layer (5), without filling the hole structures (2). To compensate mechanical strains upon the silicon substrate (1) which are effected by the doping of the conductive zone (3), a conformal auxiliary layer (6) is formed on the surface of the conductive layer (5), which auxiliary layer is under a compressive mechanical stress.

Abstract: For manufacturing a component with porous silicon, two highly doped regions with a lightly doped region arranged between them are formed in a silicon wafer. The dopant concentrations are thereby set such that porous silicon arises in the lightly doped region in a subsequent anodic etching. Light-emitting diodes or light-controlled bipolar transistors can be manufactured in this way.