Abstract: A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL. The second etching process can also etch a portion of the magnetoresistive stack. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.

Abstract: A magnetoresistive device can include a first magnetic layer structure having a first length, a barrier layer disposed on the first magnetic layer structure, a second magnetic layer structure disposed on the barrier layer and having a second length that is less than the first length.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: The invention relates to a process for producing a catalyst for the high-temperature processes (i) carbon dioxide hydrogenation, (ii) combined high-temperature carbon dioxide hydrogenation and reforming and/or (iii) reforming of hydrocarbon-comprising compounds and/or carbon dioxide and the use of the catalyst of the invention in the reforming and/or hydrogenation of hydrocarbons, preferably methane, and/or of carbon dioxide. To produce the catalyst, an aluminum source, which preferably comprises a water-soluble precursor source, is brought into contact with an yttrium-comprising metal salt solution, dried and calcined. The metal salt solution comprises, in addition to the yttrium species, at least one element from the group consisting of cobalt, copper, nickel, iron and zinc.

Abstract: A hexaaluminate-containing catalyst for reforming hydrocarbons. The catalyst consists of a hexaaluminate-containing phase, which consists of cobalt and at least one further element from the group consisting of La, Ba, and Sr, and an oxidic secondary phase. To prepare the catalyst, an aluminum source is brought into contact with a cobalt-containing metal salt solution, dried, and calcined. The metal salt solution additionally contains the at least one further element. The reforming of methane and carbon dioxide is great economic interest since synthesis gas produced during this process can form a raw material for the preparation of basic chemicals. In addition, the use of carbon dioxide as a starting material is important in the chemical syntheses in order to bind carbon dioxide obtained as waste product in numerous processes by a chemical route and thereby avoid emission into the atmosphere.

Abstract: A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL and a portion of the magnetoresistive stack. The method can further include depositing a photoresist layer on the hard mask before the first etching process and removing the photoresist layer from the hard mask following the first etching process. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.

Abstract: A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL and a portion of the magnetoresistive stack. The method can further include depositing a photoresist layer on the hard mask before the first etching process and removing the photoresist layer from the hard mask following the first etching process. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.

Abstract: A magnetoresistive device can include a first magnetic layer structure having a first length, a barrier layer disposed on the first magnetic layer structure, a second magnetic layer structure disposed on the barrier layer and having a second length that is less than the first length.

Abstract: The present invention relates to a process for producing a catalyst for the reforming of hydrocarbons, preferably methane, in the presence of CO2, water and/or hydrogen. The production of the catalyst is based on contacting of a hydrotalcite-comprising starting material with a fusible metal salt. The compounds which have been brought into contact with one another are intimately mixed and treated thermally, resulting in the fusible metal salt forming a melt. After molding, the material is subjected to a high-temperature calcination step. The metal salt melt comprises at least one metal selected from the group consisting of K, La, Fe, Co, Ni, Cu and Ce, preferably Ni. The metal salt melt more preferably comprises nickel nitrate hexahydrate.

Abstract: A magneto resistive device comprises a plurality of magneto resistive sensing elements. Each of the plurality of magneto resistive sensing elements comprises a free layer and a reference layer. The free layer has a rounded convex contour with an aspect ratio of 2 or greater.

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract: The present invention relates to a process for producing a catalyst for the reforming of hydrocarbons, preferably methane, in the presence of CO2, water and/or hydrogen. The production of the catalyst is based on contacting of a hydrotalcite-comprising starting material with a fusible metal salt. The compounds which have been brought into contact with one another are intimately mixed and treated thermally, resulting in the fusible metal salt forming a melt. After molding, the material is subjected to a high-temperature calcination step. The metal salt melt comprises at least one metal selected from the group consisting of K, La, Fe, Co, Ni, Cu and Ce, preferably Ni. The metal salt melt more preferably comprises nickel nitrate hexahydrate.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: An integrated temperature sensor comprising a barrier layer connecting at least two conductive elements, wherein the barrier layer has a positive temperature coefficient.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: The present invention relates to a process for producing a catalyst for carrying out methanation reactions. The production of the catalyst is based on contacting of a hydrotalcite-comprising starting material with a fusible metal salt. The compounds brought into contact with one another are intimately mixed, thermally treated so that the metal salt fraction melts and subsequently subjected to a low-temperature calcination step and a high-temperature calcination step. The metal salt melt comprises at least one metal selected from the group consisting of K, La, Fe, Co, Ni, Cu and Ce, preferably Ni. The metal salt melt more preferably comprises/contains nickel nitrate hexahydrate. The hydrotalcite-comprising starting material is preferably hydrotalcite or a hydrotalcite-like compound as starting material, and the hydrotalcite-comprising starting material preferably comprises magnesium and aluminum as metal species.

Abstract: A hexaaluminate-containing catalyst containing a hexaaluminate-containing phase which includes cobalt and at least one further element of La, Ba or Sr. The catalyst contains 2 to 15 mol % Co, 70 to 90 mol % Al, and 2 to 25 mol % of the further element of La, Ba or Sr. In addition to the hexaaluminate-containing phase, the catalyst can include 0 to 50% by weight of an oxidic secondary phase. The process of preparing the catalyst includes contacting an aluminum oxide source with cobalt species and at least with an element from the group of La, Ba and Sr. The molded and dried material is preferably calcined at a temperature greater than or equal to 800° C. In the reforming process for reacting hydrocarbons in the presence of CO2, the catalyst is used at a process temperature of greater than 700° C., with the process pressure being greater than 5 bar.

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract: The invention is based on a hammer drill and/or chisel hammer, having an impact mechanism unit, an impact mechanism housing and at least one damping unit. The invention proposes that the damping unit is arranged on the impact mechanism housing along a main extension direction of the impact mechanism unit.

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.