Abstract: A semiconductor structure includes a semiconductor layer of a first conductivity type, a photosensitive zone configured such that photogenerated charges may be accumulated in a first potential well, a region of the first conductivity type, formed in the semiconductor layer, for temporarily storing the photogenerated charges in a second potential well, a transfer gate between the region of the second conductivity type and the photosensitive zone for defining a potential barrier between the first and second potential wells during a non-transfer phase, and for eliminating the potential barrier between the first and second potential wells during a transfer phase, and a readout structure for reading out the temporarily stored photogenerated charges, which includes a JFET, the gate of which is formed by the region of the second conductivity type.

Abstract: A thermally regulated amplifier system includes an amplifier unit, a temperature-sensing unit and a controller. The amplifier unit includes a power amplifier that has an adjustable gain function. The controller receives temperature readings from the temperature-sensing unit, computes the gain G(n) of the amplifier unit, and provides the computed gain of the amplifier G(n) to the power amplifier unit.

Abstract: A thermally regulated amplifier system includes an amplifier unit, a temperature-sensing unit and a controller. The amplifier unit includes a power amplifier that has an adjustable gain function. The controller receives temperature readings from the temperature-sensing unit, computes the gain G(n) of the amplifier unit, and provides the computed gain of the amplifier G(n) to the power amplifier unit.