Patents by Inventor Andreas Voerckel
Andreas Voerckel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9905639Abstract: By using a single trench mask, first and second trenches are formed that extend from a main surface into a semiconductor layer. A foundation is formed that includes first regions in and/or directly adjoining the first trenches. A superstructure is formed in alignment with the foundation by using position information directly obtained from structures formed in the first and/or the second trenches.Type: GrantFiled: November 25, 2016Date of Patent: February 27, 2018Assignee: Infineon Technologies Austria AGInventors: Hans Weber, Christian Fachmann, Daniel Tutuc, Andreas Voerckel
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Patent number: 9887261Abstract: A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, and a peripheral area arranged between the active area and the lateral edge. A source metallization is arranged on the first surface. A drain metallization is arranged opposite to the source metallization. The semiconductor body further includes a drift region in Ohmic contact with the drain metallization, and a plurality of compensation regions forming respective pn-junctions with the drift region, which are arranged in the active area and in the peripheral area, and are in Ohmic contact with the source metallization via respective body regions arranged in the active area and having a higher doping concentration than the compensation regions.Type: GrantFiled: September 14, 2016Date of Patent: February 6, 2018Assignee: Infineon Technologies Austria AGInventors: Hans Weber, Daniel Tutuc, Andreas Voerckel
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Publication number: 20180019132Abstract: Disclosed is a method that includes forming a plurality of semiconductor arrangements one above the other. In this method, forming each of the plurality of semiconductor arrangements includes: forming a semiconductor layer; forming a plurality of trenches in a first surface of the semiconductor layer; and implanting dopant atoms of at least one of a first type and a second type into at least one of a first sidewall and a second sidewall of each of the plurality of trenches of the semiconductor layer.Type: ApplicationFiled: July 13, 2017Publication date: January 18, 2018Inventors: Anton Mauder, Hans Weber, Franz Hirler, Johannes Georg Laven, Hans-Joachim Schulze, Werner Schustereder, Maximilian Treiber, Daniel Tutuc, Andreas Voerckel
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Patent number: 9825165Abstract: A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, a peripheral area arranged between the active area and the lateral edge, a drift region, first compensation regions forming respective first pn-junctions with the drift region, and second compensation regions extending from the first surface into the drift region and forming respective second pn-junctions with the drift region. The first compensation regions form in the active area a lattice comprising a first base vector having a first length. The second compensation regions have, in a horizontal direction parallel to the first surface, a horizontal width which decreases with an increasing vertical distance from the first surface and with a decreasing horizontal distance from the edge.Type: GrantFiled: December 17, 2015Date of Patent: November 21, 2017Assignee: Infineon Technologies Austria AGInventors: Hans Weber, Markus Schmitt, Andreas Voerckel
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Patent number: 9824927Abstract: A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side facing away from the carrier, to an additional carrier.Type: GrantFiled: November 9, 2016Date of Patent: November 21, 2017Assignee: INFINEON TECHNOLOGIES AUSTRIA AGInventor: Andreas Voerckel
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Patent number: 9704984Abstract: A super-junction semiconductor device includes a junction termination area at a first surface of a semiconductor body and at least partly surrounding an active cell area. An inner part of the junction termination area is arranged between an outer part of the junction termination area and the active cell area. A charge compensation device structure includes first regions of a first conductivity type and second regions of a second conductivity type disposed alternately along a first lateral direction. First surface areas correspond to a projection of the first regions onto the first surface, and second surface areas correspond to a projection of the second regions onto the first surface. The super-junction semiconductor device further includes at least one of a first junction termination extension structure and a second junction termination extension structure.Type: GrantFiled: April 27, 2016Date of Patent: July 11, 2017Assignee: Infineon Technologies Austria AGInventors: Franz Hirler, Daniel Tutuc, Andreas Voerckel, Hans Weber
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Patent number: 9704954Abstract: A semiconductor device comprises at least one strip-shaped cell compensation region of a vertical electrical element arrangement, at least one strip-shaped edge compensation region and a bridge structure. The at least one strip-shaped cell compensation regions extends into a semiconductor substrate and comprises a first conductivity type. Further, the at least one strip-shaped cell compensation region is connected to a first electrode structure of the vertical electrical element arrangement. The at least one strip-shaped edge compensation region extends into the semiconductor substrate within an edge termination region of the semiconductor device and outside the cell region. Further, the at least one strip-shaped edge compensation region comprises the first conductivity type. The bridge structure electrically connects the at least one strip-shaped edge compensation region with the at least one strip-shaped cell compensation region within the edge termination region.Type: GrantFiled: February 11, 2016Date of Patent: July 11, 2017Assignee: Infineon Technologies Austria AGInventors: Daniel Tutuc, Franz Hirler, Andreas Voerckel, Hans Weber
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Publication number: 20170154956Abstract: By using a single trench mask, first and second trenches are formed that extend from a main surface into a semiconductor layer. A foundation is formed that includes first regions in and/or directly adjoining the first trenches. A superstructure is formed in alignment with the foundation by using position information directly obtained from structures formed in the first and/or the second trenches.Type: ApplicationFiled: November 25, 2016Publication date: June 1, 2017Inventors: Hans Weber, Christian Fachmann, Daniel Tutuc, Andreas Voerckel
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Publication number: 20170053833Abstract: A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side facing away from the carrier, to an additional carrier.Type: ApplicationFiled: November 9, 2016Publication date: February 23, 2017Inventor: Andreas Voerckel
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Patent number: 9548247Abstract: A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side facing away from the carrier, to an additional carrier.Type: GrantFiled: July 22, 2013Date of Patent: January 17, 2017Assignee: INFINEON TECHNOLOGIES AUSTRIA AGInventor: Andreas Voerckel
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Publication number: 20170005164Abstract: A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, and a peripheral area arranged between the active area and the lateral edge. A source metallization is arranged on the first surface. A drain metallization is arranged opposite to the source metallization. The semiconductor body further includes a drift region in Ohmic contact with the drain metallization, and a plurality of compensation regions forming respective pn-junctions with the drift region, which are arranged in the active area and in the peripheral area, and are in Ohmic contact with the source metallization via respective body regions arranged in the active area and having a higher doping concentration than the compensation regions.Type: ApplicationFiled: September 14, 2016Publication date: January 5, 2017Inventors: Hans Weber, Daniel Tutuc, Andreas Voerckel
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Patent number: 9520325Abstract: A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side facing away from the carrier, to an additional carrier.Type: GrantFiled: July 22, 2013Date of Patent: December 13, 2016Assignee: INFINEON TECHNOLOGIES AUSTRIA AGInventor: Andreas Voerckel
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Publication number: 20160322490Abstract: A super-junction semiconductor device includes a junction termination area at a first surface of a semiconductor body and at least partly surrounding an active cell area. An inner part of the junction termination area is arranged between an outer part of the junction termination area and the active cell area. A charge compensation device structure includes first regions of a first conductivity type and second regions of a second conductivity type disposed alternately along a first lateral direction. First surface areas correspond to a projection of the first regions onto the first surface, and second surface areas correspond to a projection of the second regions onto the first surface. The super-junction semiconductor device further includes at least one of a first junction termination extension structure and a second junction termination extension structure.Type: ApplicationFiled: April 27, 2016Publication date: November 3, 2016Inventors: Franz Hirler, Daniel Tutuc, Andreas Voerckel, Hans Weber
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Patent number: 9484399Abstract: A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, and a peripheral area arranged between the active area and the lateral edge. A source metallization is arranged on the first surface. A drain metallization is arranged opposite to the source metallization. The semiconductor body further includes a drift region in Ohmic contact with the drain metallization, and a plurality of compensation regions forming respective pn-junctions with the drift region, which are arranged in the active area and in the peripheral area, and are in Ohmic contact with the source metallization via respective body regions arranged in the active area and having a higher doping concentration than the compensation regions.Type: GrantFiled: June 10, 2015Date of Patent: November 1, 2016Assignee: Infineon Technologies Austria AGInventors: Hans Weber, Daniel Tutuc, Andreas Voerckel
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Publication number: 20160240615Abstract: A semiconductor device comprises at least one strip-shaped cell compensation region of a vertical electrical element arrangement, at least one strip-shaped edge compensation region and a bridge structure. The at least one strip-shaped cell compensation regions extends into a semiconductor substrate and comprises a first conductivity type. Further, the at least one strip-shaped cell compensation region is connected to a first electrode structure of the vertical electrical element arrangement. The at least one strip-shaped edge compensation region extends into the semiconductor substrate within an edge termination region of the semiconductor device and outside the cell region. Further, the at least one strip-shaped edge compensation region comprises the first conductivity type. The bridge structure electrically connects the at least one strip-shaped edge compensation region with the at least one strip-shaped cell compensation region within the edge termination region.Type: ApplicationFiled: February 11, 2016Publication date: August 18, 2016Inventors: Daniel Tutuc, Franz Hirler, Andreas Voerckel, Hans Weber
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Publication number: 20160181416Abstract: A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, a peripheral area arranged between the active area and the lateral edge, a drift region, first compensation regions forming respective first pn-junctions with the drift region, and second compensation regions extending from the first surface into the drift region and forming respective second pn-junctions with the drift region. The first compensation regions form in the active area a lattice comprising a first base vector having a first length. The second compensation regions have, in a horizontal direction parallel to the first surface, a horizontal width which decreases with an increasing vertical distance from the first surface and with a decreasing horizontal distance from the edge.Type: ApplicationFiled: December 17, 2015Publication date: June 23, 2016Inventors: Hans Weber, Markus Schmitt, Andreas Voerckel
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Publication number: 20160005811Abstract: A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, and a peripheral area arranged between the active area and the lateral edge. A source metallization is arranged on the first surface. A drain metallization is arranged opposite to the source metallization. The semiconductor body further includes a drift region in Ohmic contact with the drain metallization, and a plurality of compensation regions forming respective pn-junctions with the drift region, which are arranged in the active area and in the peripheral area, and are in Ohmic contact with the source metallization via respective body regions arranged in the active area and having a higher doping concentration than the compensation regions.Type: ApplicationFiled: June 10, 2015Publication date: January 7, 2016Inventors: Hans Weber, Daniel Tutuc, Andreas Voerckel
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Patent number: 9029974Abstract: A semiconductor device according to an embodiment is at least partially arranged in or on a substrate and includes a recess forming a mesa, wherein the mesa extends along a direction into the substrate to a bottom plane of the recess and includes a semiconducting material of a first conductivity type, the semiconducting material of the mesa including at least locally a first doping concentration not extending further into the substrate than the bottom plane. The semiconductor device further includes an electrically conductive structure arranged at least partially along a sidewall of the mesa, the electrically conductive structure forming a Schottky or Schottky-like electrical contact with the semiconducting material of the mesa, wherein the substrate comprises the semiconducting material of the first conductivity type comprising at least locally a second doping concentration different from the first doping concentration along a projection of the mesa into the substrate.Type: GrantFiled: September 11, 2013Date of Patent: May 12, 2015Assignee: Infineon Technologies AGInventors: Romain Esteve, Jens Konrath, Daniel Kueck, David Laforet, Cedric Ouvrard, Roland Rupp, Andreas Voerckel, Wolfgang Werner
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Publication number: 20150069411Abstract: A semiconductor device according to an embodiment is at least partially arranged in or on a substrate and includes a recess forming a mesa, wherein the mesa extends along a direction into the substrate to a bottom plane of the recess and includes a semiconducting material of a first conductivity type, the semiconducting material of the mesa including at least locally a first doping concentration not extending further into the substrate than the bottom plane. The semiconductor device further includes an electrically conductive structure arranged at least partially along a sidewall of the mesa, the electrically conductive structure forming a Schottky or Schottky-like electrical contact with the semiconducting material of the mesa, wherein the substrate comprises the semiconducting material of the first conductivity type comprising at least locally a second doping concentration different from the first doping concentration along a projection of the mesa into the substrate.Type: ApplicationFiled: September 11, 2013Publication date: March 12, 2015Inventors: Romain Esteve, Jens Konrath, Daniel Kueck, David Laforet, Cedric Ouvrard, Roland Rupp, Andreas Voerckel, Wolfgang Werner
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Publication number: 20150024550Abstract: A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side facing away from the carrier, to an additional carrier.Type: ApplicationFiled: July 22, 2013Publication date: January 22, 2015Inventor: Andreas Voerckel