Abstract: An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

Abstract: An optical communication device may include a driver component, arranged to achieve a driving voltage, and a modulator component, including a laser or arranged to receive light from a laser. The modulator component may be arranged to achieve a modulated light signal modulated based on the driving voltage. The device may include a transmission line arranged to transfer the driving voltage between the driver component and the modulator component. The transmission line may not impedance matched to the driver component, the transmission line may have an impedance which is at least 20% lower than an output impedance of the driver component, and the transmission line may be impedance matched with respect to signal reflections to the modulator component.

Abstract: A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.

Abstract: An optical communication device may include a driver component, arranged to achieve a driving voltage, and a modulator component, including a laser or arranged to receive light from a laser. The modulator component may be arranged to achieve a modulated light signal modulated based on the driving voltage. The device may include a transmission line arranged to transfer the driving voltage between the driver component and the modulator component. The transmission line may not impedance matched to the driver component, the transmission line may have an impedance which is at least 20% lower than an output impedance of the driver component, and the transmission line may be impedance matched with respect to signal reflections to the modulator component.

Abstract: A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.

Abstract: An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

Abstract: A semiconductor laser chip-on-carrier (CoC) device comprising: a semiconductor laser component comprising an electric laser terminal; a driver circuit for producing on an electric driver terminal an alternating current electric driving signal; and an electric signal conductor electrically connecting the driver terminal to the laser terminal, wherein the electric signal conductor comprises: a first printed trace which is not arranged on the semiconductor laser component and which comprises a first trace elongated section and a first trace downstream terminal section; and a first wire bond, connecting the first trace downstream terminal section to the laser terminal, and wherein the first trace elongated section is adapted to the semiconductor laser component such that the first trace elongated section and an internal capacitance of the semiconductor is laser component together correspond to an impedance which is at the most 20% from an output impedance of an output terminal of the driver circuit.

Abstract: An optical communication device may include a driver component, arranged to achieve a driving voltage, and a modulator component, including a laser or arranged to receive light from a laser. The modulator component may be arranged to achieve a modulated light signal modulated based on the driving voltage. The device may include a transmission line arranged to transfer the driving voltage between the driver component and the modulator component. The transmission line may not impedance matched to the driver component, the transmission line may have an impedance which is at least 20% lower than an output impedance of the driver component, and the transmission line may be impedance matched with respect to signal reflections to the modulator component.

Abstract: A carrier layout comprising a substrate comprising a ground plane layer and a coplanar waveguide interconnect disposed onto the substrate. The coplanar waveguide interconnect comprises a pair of coplanar conductors and a central conductor disposed between the pair of coplanar conductors. The coplanar conductors of the pair are electrically connected to each other by at least one conducting island that is isolated from the ground plane layer. The present invention also provides an interconnect structure for coupling an electronic unit to an optical device disposed on a substrate having a ground plane layer, the interconnect structure comprising a pair of coplanar conductors and a central conductor disposed between the pair of coplanar conductors. The conductors of the pair are electrically connected by at least one conducting island that is isolated from the ground plane layer.

Abstract: An integrated optical transceiver, comprising a laser component, comprising an array of VCSEL diodes formed on a laser diode substrate; a laser driving component, comprising laser diode driving circuitry formed on a laser driving circuitry substrate; a photodiode component, comprising an array of photodiodes formed on a photodiode substrate; and a photodiode driving component, comprising photodiode driving circuitry formed on a photodiode driving circuitry substrate; a first heat sink comprising a connected piece of material to transport excess heat away from the integrated optical transceiver and connected to both the laser and photodiode driving components; and an electrically insulating material separating the photodiode substrate from the first heat sink and being air or dielectric material with a relative dielectric constant ?<10, wherein the electrically insulating material provides a gap having an effective electrical distance of at least 80 ?m between the photodiode substrate and the first heat sin

Abstract: A semiconductor laser chip-on-carrier (CoC) device comprising: a semiconductor laser component comprising an electric laser terminal; a driver circuit for producing on an electric driver terminal an alternating current electric driving signal; and an electric signal conductor electrically connecting the driver terminal to the laser terminal, wherein the electric signal conductor comprises: a first printed trace which is not arranged on the semiconductor laser component and which comprises a first trace elongated section and a first trace downstream terminal section; and a first wire bond, connecting the first trace downstream terminal section to the laser terminal, and wherein the first trace elongated section is adapted to the semiconductor laser component such that the first trace elongated section and an internal capacitance of the semiconductor is laser component together correspond to an impedance which is at the most 20% from an output impedance of an output terminal of the driver circuit.

Abstract: An optoelectronic module is provide and includes an electronic unit, an optical unit, and an interconnect structure. The electronic unit is capable of outputting and/or receiving electric signals, while the optical unit is capable of converting the electric signals into optical signals. The interconnect structure connects the electronic unit and the optical unit, and includes an electrically conducting substrate and a pair of transmission leads connecting electronic unit and the optical unit. The pair of transmission leads includes a signal lead and a ground lead having lower impedance than the signal lead.

Abstract: An integrated optical transceiver, comprising a laser component, comprising an array of VCSEL diodes formed on a laser diode substrate; a laser driving component, comprising laser diode driving circuitry formed on a laser driving circuitry substrate; a photodiode component, comprising an array of photodiodes formed on a photodiode substrate; and a photodiode driving component, comprising photodiode driving circuitry formed on a photodiode driving circuitry substrate; a first heat sink comprising a connected piece of material to transport excess heat away from the integrated optical transceiver and connected to both the laser and photodiode driving components; and an electrically insulating material separating the photodiode substrate from the first heat sink and being air or dielectric material with a relative dielectric constant ?<10, wherein the electrically insulating material provides a gap having an effective electrical distance of at least 80 ?m between the photodiode substrate and the first heat si

Abstract: A carrier layout comprising a substrate comprising a ground plane layer and a coplanar waveguide interconnect disposed onto the substrate. The coplanar waveguide interconnect comprises a pair of coplanar conductors and a central conductor disposed between the pair of coplanar conductors. The coplanar conductors of the pair are electrically connected to each other by at least one conducting island that is isolated from the ground plane layer. The present invention also provides an interconnect structure for coupling an electronic unit to an optical device disposed on a substrate having a ground plane layer, the interconnect structure comprising a pair of coplanar conductors and a central conductor disposed between the pair of coplanar conductors. The conductors of the pair are electrically connected by at least one conducting island that is isolated from the ground plane layer.

Abstract: An electro-optical modulator includes a substrate comprising a first Mach-Zehnder modulator comprising a first waveguide and a second waveguide and a second Mach-Zehnder modulator comprising a first waveguide and a second waveguide. A first positive signal electrode is positioned on the substrate over the first waveguide of the first Mach-Zehnder modulator and a first negative signal electrode is positioned on the substrate over the second waveguide of the first Mach-Zehnder modulator. The first positive signal electrode and the first negative signal electrode are connected to a first differential signal input. A second positive signal electrode is positioned on the substrate over the first waveguide of the second Mach-Zehnder modulator and a second negative signal electrode positioned on the substrate over the second waveguide of the second Mach-Zehnder modulator. The second positive signal electrode and the second negative signal electrode are connected to a second differential signal input.

Abstract: The present invention relates to an apparatus for damping arid monitoring emissions from a light emitting device, particularly a vertical cavity surface emitting laser (VCSEL), comprising: a semi transparent substrate, preferably glass; a light emitting device for generating light emission; a damping layer deposited on a surface of the substrate; and a pair of electrodes, each of which being in direct contact with the damping layer. The damping layer is adapted to decrease the power level of the light emission of the light emitting device by absorption, to a desired level, for instance, to a level that meets eye safety limits. In addition, the damping layer is photosensitive to the light emission of the light emitting device, thereby allowing the pair of electrodes to output an electric signal corresponding to the power level of the light emission of the light emitting device.

Abstract: An optical receiver is disclosed having a dielectric non-conductive substrate. A ground plane is positioned on the dielectric non-conductive substrate. An optical signal converting photodiode is also positioned on the dielectric non-conductive substrate, and has an optical signal receiver and an electrical signal output. An electrical signal amplifier is provided having an input connected to the electrical signal output of the optical signal converting photodiode. A first opening is positioned in the ground plane and surrounds the optical signal converting photodiode. The first opening has a resonance frequency higher than a fundamental frequency such that crosstalk is reducible at the input of the electrical signal amplifier.

Abstract: An optoelectronic module is provide and includes an electronic unit, an optical unit, and an interconnect structure. The electronic unit is capable of outputting and/or receiving electric signals, while the optical unit is capable of converting the electric signals into optical signals. The interconnect structure connects the electronic unit and the optical unit, and includes an electrically conducting substrate and a pair of transmission leads connecting electronic unit and the optical unit. The pair of transmission leads includes a signal lead and a ground lead having lower impedance than the signal lead.

Abstract: Disclosed embodiments relate to an interconnect structure for coupling at least one electronic unit for outputting and/or receiving electric signals, and at least one optical unit for converting said electric signals into optical signals and/or vice versa, to a further electronic component. The interconnect structure comprises an electrically insulating substrate and a plurality of signal lead pairs to be coupled between said electronic unit and a front end contact region for electrically contacting said interconnect structure by said further electronic component.

Abstract: An electrical connection interface is provided. The electrical connection interface includes a first ground plane layer, a second ground plane layer, a first substrate and a second substrate. The second ground plane layer is positioned to overlap the first ground plane layer. The first substrate includes a first substrate conductive lead with a first interface region connected to and electrically insulated from the first ground plane layer. The second substrate includes a second substrate conductive lead with a second interface region connected to the first substrate conductive lead and the second ground plane layer. The second substrate conductive lead is electrically insulated from the second ground plane layer.