Patents by Inventor Andrei Papou

Andrei Papou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130062725
    Abstract: A galvanic isolation system provides galvanic isolation in digital transfer integrated circuits by using conductivity modulation of the semiconductor substrate. Modulation of the conductivity of the substrate affects eddy current losses of a (differential) RF inductor that is isolated from the substrate by a sufficient amount of dielectric material, which provides a basis for signal transfer from the modulated substrate to the inductor across the isolation barrier.
    Type: Application
    Filed: September 12, 2011
    Publication date: March 14, 2013
    Inventors: Peter J. Hopper, Peter Smeys, William French, Andrei Papou, Chaudhuri Dutt Adilti
  • Publication number: 20130062729
    Abstract: A plurality of sequential electro-deposition, planarization and insulator deposition steps are performed over a patterned thick photoresist film to form a laminated ferromagnetic alloy core for micro-fabricated inductors and transformers. The use of a plurality of contiguous thin laminations within deep patterns on non-removable photoresist film provides sufficient volume of magnetic film in, for example, high frequency applications, and reduces eddy current loss at high frequency.
    Type: Application
    Filed: September 12, 2011
    Publication date: March 14, 2013
    Inventors: Peter J. Hopper, William French, Andrei Papou, Dok Won Lee
  • Patent number: 8390093
    Abstract: A galvanic isolation system provides galvanic isolation in digital transfer integrated circuits by using conductivity modulation of the semiconductor substrate. Modulation of the conductivity of the substrate affects eddy current losses of a (differential) RF inductor that is isolated from the substrate by a sufficient amount of dielectric material, which provides a basis for signal transfer from the modulated substrate to the inductor across the isolation barrier.
    Type: Grant
    Filed: September 12, 2011
    Date of Patent: March 5, 2013
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Smeys, William French, Andrei Papou, Aditi Dutt Chaudhuri
  • Patent number: 8338913
    Abstract: The inductance of an inductor is increased by forming a conductive wire to have a serpentine shape that weaves through a ferromagnetic core that has a number of segments that are connected together in a serpentine shape where each segment of the ferromagnetic core also has a number of sections that are connected together in a serpentine shape.
    Type: Grant
    Filed: November 10, 2010
    Date of Patent: December 25, 2012
    Assignee: National Semiconductor Corporation
    Inventors: Peter Smeys, Andrei Papou, Peter J. Hopper
  • Patent number: 8314676
    Abstract: A controlled seam magnetic core lamination utilizable in an inductor structure includes a magnetic base and first and second spaced-apart magnetic sidewalls extending substantially orthogonally from the base to define a seam therebetween.
    Type: Grant
    Filed: May 2, 2011
    Date of Patent: November 20, 2012
    Assignee: National Semiconductor Corporation
    Inventors: Peter Smeys, Andrei Papou, Peter Johnson, Anuraag Mohan
  • Publication number: 20120280781
    Abstract: A controlled seam magnetic core lamination utilizable in an inductor structure includes a magnetic base and first and second spaced-apart magnetic sidewalls extending substantially orthogonally from the base to define a seam therebetween.
    Type: Application
    Filed: May 2, 2011
    Publication date: November 8, 2012
    Inventors: Peter Smeys, Andrei Papou, Peter Johnson, Anuraag Mohan
  • Publication number: 20120233849
    Abstract: A damascene process is utilized to fabricate the segmented magnetic core elements of an integrated circuit inductor structure. The magnetic core is electroplated from a seed layer that is conformal with a permanent dielectric mold that results in sidewall plating defining an easy magnetic axis. The hard axis runs parallel to the longitudinal axis of the core and the inductor coils are orthogonal to the core's longitudinal axis. The magnetic field generated by the inductor coils is, therefore, parallel and self-aligned to the hard magnetic axis. The easy axis is enhanced by electroplating in an applied magnetic field parallel to the easy axis.
    Type: Application
    Filed: June 1, 2012
    Publication date: September 20, 2012
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Peter Smeys, Peter Johnson, Andrei Papou
  • Patent number: 8205324
    Abstract: A damascene process is utilized to fabricate the segmented magnetic core elements of an integrated circuit inductor structure. The magnetic core is electroplated from a seed layer that is conformal with a permanent dielectric mold that results in sidewall plating defining an easy magnetic axis. The hard axis runs parallel to the longitudinal axis of the core and the inductor coils are orthogonal to the core's longitudinal axis. The magnetic field generated by the inductor coils is, therefore, parallel and self-aligned to the hard magnetic axis. The easy axis is enhanced by electroplating in an applied magnetic field parallel to the easy axis.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: June 26, 2012
    Assignee: National Semiconductor Corporation
    Inventors: Peter Smeys, Peter Johnson, Andrei Papou
  • Publication number: 20120112296
    Abstract: The inductance of an inductor is increased by forming a conductive wire to have a serpentine shape that weaves through a ferromagnetic core that has a number of segments that are connected together in a serpentine shape where each segment of the ferromagnetic core also has a number of sections that are connected together in a serpentine shape.
    Type: Application
    Filed: November 10, 2010
    Publication date: May 10, 2012
    Inventors: Peter Smeys, Andrei Papou, Peter J. Hopper
  • Publication number: 20110310579
    Abstract: An inductor is formed on a wafer by attaching a first core structure to the wafer with a pick and place operation, forming a coil with one or more thick metal layers over the first core structure, and then attaching a second core structure to the first core structure with the pick and place operation after the coil has been formed. In addition, the pick and place operation can also be used to attach one or more integrated circuits to the wafer to form an integrated inductive device.
    Type: Application
    Filed: June 16, 2010
    Publication date: December 22, 2011
    Inventors: Peter Smeys, Andrei Papou
  • Patent number: 8042260
    Abstract: The claimed invention pertains to methods of forming one or more inductors on a semiconductor substrate. In one embodiment, a method of forming an array of inductor core elements on a semiconductor substrate that includes integrated circuits is disclosed. A first set of spaced apart metallic core elements are formed over the substrate. Isolation sidewalls are then formed on side surfaces of the core elements. Afterward, a second set of metallic core elements are formed over the substrate. The first and second sets of core elements are substantially co-planar and interleaved such that only the isolation sidewalls separate adjacent core elements. Particular embodiments involve other processing operations, such as the selective electroplating of different types of metal to form core elements and/or the deposition and etching away of an isolation layer to form isolation sidewalls on the core elements.
    Type: Grant
    Filed: October 13, 2008
    Date of Patent: October 25, 2011
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Johnson, Peter Smeys, Andrei Papou
  • Patent number: 7936246
    Abstract: Saturation of nonlinear ferromagnetic core material for on-chip inductors for high current applications is significantly reduced by providing a core design wherein magnetic flux does not form a closed loop, but rather splits into multiple sub-fluxes that are directed to cancel each other. The design enables high on-chip inductance for high current power applications.
    Type: Grant
    Filed: October 9, 2007
    Date of Patent: May 3, 2011
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Smeys, Andrei Papou
  • Patent number: 7897472
    Abstract: Methods for forming multiple inductors on a semiconductor wafer are described. A plating layer and a photoresist layer are applied over a semiconductor wafer. Recess regions are etched in the photoresist layer using photolithographic techniques, which exposes portions of the underlying plating layer. Metal is electroplated into the recess regions in the photoresist layer to form multiple magnetic core inductor members. A dielectric insulating layer is applied over the magnetic core inductor members. Additional plating and photoresist layers are applied over the dielectric insulating layer. Recess regions are formed in the newly applied photoresist layer. Electroplating is used to form inductor windings in the recess regions. Optionally, a magnetic paste can be applied over the inductor coils.
    Type: Grant
    Filed: November 23, 2009
    Date of Patent: March 1, 2011
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Johnson, Kyuwoon Hwang, Andrei Papou
  • Publication number: 20110025443
    Abstract: An apparatus and method for wafer level fabrication of high value inductors directly on top of semiconductor integrated circuits. The apparatus and method includes fabricating a semiconductor wafer including a plurality of dice, each of the dice including power circuitry and a switching node. Once the wafer is fabricated, then a plurality of inductors are fabricated directly onto the plurality of dice on the wafer respectively. Each inductor is fabricated by forming a plurality of magnetic core inductor members on an interconnect dielectric layer formed on the wafer. An insulating layer, and then inductor coils, are then formed over the plurality of magnetic core inductor members over each die. A plated magnetic layer is formed over the plurality of inductors respectively to raise the permeability and inductance of the structure.
    Type: Application
    Filed: October 6, 2010
    Publication date: February 3, 2011
    Applicant: NATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Peter J. Hopper, Peter Johnson, Kyuwoon Hwang, Andrei Papou
  • Patent number: 7829425
    Abstract: An apparatus and method for wafer level fabrication of high value inductors directly on top of semiconductor integrated circuits. The apparatus and method includes fabricating a semiconductor wafer including a plurality of dice, each of the dice including power circuitry and a switching node. Once the wafer is fabricated, then a plurality of inductors are fabricated directly onto the plurality of dice on the wafer respectively. Each inductor is fabricated by forming a plurality of magnetic core inductor members on an interconnect dielectric layer formed on the wafer. An insulating layer, and then inductor coils, are then formed over the plurality of magnetic core inductor members over each die. A plated magnetic layer is formed over the plurality of inductors respectively to raise the permeability and inductance of the structure.
    Type: Grant
    Filed: August 15, 2006
    Date of Patent: November 9, 2010
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Johnson, Kyuwoon Hwang, Andrei Papou
  • Patent number: 7755463
    Abstract: The claimed invention relates to arrangements of inductors and integrated circuit dice. One embodiment pertains to an integrated circuit die that has an inductor formed thereon. The inductor includes an inductor winding having a winding input and a winding output. The inductor also comprises an inductor core array having at least first and second sets of inductor core elements that are magnetically coupled with the inductor winding. Each inductor core element in the first set of inductor core elements is formed from a first metallic material. Each inductor core element in the second set of inductor core elements is formed from a second metallic material that has a different magnetic coercivity than the first magnetic material. The inductor further comprises a set of spacers that electrically isolate the inductor core elements. Some embodiments involve multiple inductor windings and/or multiple inductor core elements that magnetically interact in various ways.
    Type: Grant
    Filed: October 13, 2008
    Date of Patent: July 13, 2010
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Johnson, Peter Smeys, Andrei Papou
  • Publication number: 20100068864
    Abstract: Methods for forming multiple inductors on a semiconductor wafer are described. A plating layer and a photoresist layer are applied over a semiconductor wafer. Recess regions are etched in the photoresist layer using photolithographic techniques, which exposes portions of the underlying plating layer. Metal is electroplated into the recess regions in the photoresist layer to form multiple magnetic core inductor members. A dielectric insulating layer is applied over the magnetic core inductor members. Additional plating and photoresist layers are applied over the dielectric insulating layer. Recess regions are formed in the newly applied photoresist layer. Electroplating is used to form inductor windings in the recess regions. Optionally, a magnetic paste can be applied over the inductor coils.
    Type: Application
    Filed: November 23, 2009
    Publication date: March 18, 2010
    Applicant: NATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Peter J. HOPPER, Peter JOHNSON, Kyuwoon HWANG, Andrei PAPOU
  • Patent number: 7652348
    Abstract: An apparatus and method for wafer level fabrication of high value inductors directly on top of semiconductor integrated circuits. The apparatus and method includes fabricating a semiconductor wafer including a plurality of dice, each of the dice including power circuitry. Once the wafer is fabricated, then a plurality of inductors are fabricated directly onto the plurality of dice on the wafer and are in electrical contact with a switching node of the power circuitry on each die respectively. The inductors are fabricated by forming a plurality of magnetic core inductor members on an interconnect dielectric layer for each die on the wafer. An insulating layer and then inductor coils are then formed over the plurality of magnetic core inductor members over each die. A layer of magnetic paste is also optionally provided over each inductor coil to further increase inductance.
    Type: Grant
    Filed: July 27, 2006
    Date of Patent: January 26, 2010
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Peter Johnson, Kyuwoon Hwang, Andrei Papou
  • Patent number: 7584533
    Abstract: A damascene process is utilized to fabricate the segmented magnetic core elements of an integrated circuit inductor structure. The magnetic core is electroplated from a seed layer that is conformal with a permanent dielectric mold that results in sidewall plating defining an easy magnetic axis. The hard axis runs parallel to the longitudinal axis of the core and the inductor coils are orthogonal to the core's longitudinal axis. The magnetic field generated by the inductor coils is, therefore, parallel and self-aligned to the hard magnetic axis. The easy axis can be enhanced by electroplating in an applied magnetic field parallel to the easy axis.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: September 8, 2009
    Assignee: National Semiconductor Corporation
    Inventors: Peter Smeys, Peter Johnson, Andrei Papou
  • Publication number: 20090181473
    Abstract: A damascene process is utilized to fabricate the segmented magnetic core elements of an integrated circuit inductor structure. The magnetic core is electroplated from a seed layer that is conformal with a permanent dielectric mold that results in sidewall plating defining an easy magnetic axis. The hard axis runs parallel to the longitudinal axis of the core and the inductor coils are orthogonal to the core's longitudinal axis. The magnetic field generated by the inductor coils is, therefore, parallel and self-aligned to the hard magnetic axis. The easy axis is enhanced by electroplating in an applied magnetic field parallel to the easy axis.
    Type: Application
    Filed: November 21, 2008
    Publication date: July 16, 2009
    Inventors: Peter Smeys, Peter Johnson, Andrei Papou