Abstract: A method of characterizing a device under test (DUT) includes illuminating the DUT with a broadband optical beam within an optical field of view (FOV), illuminating the DUT with an X-ray beam within an X-ray FOV overlapping the optical FOV, and concurrently acquiring X-ray metrology information, e.g., one or more X-ray images utilizing various modalities, such as absorption, phase contrast difference, darkfield, small angle X-ray scattering (SAXS) and/or fluorescence, from the X-ray FOV and a plurality of optical images of the optical FOV, each of the optical images corresponding to respective selected wavelengths of the broadband optical beam from each of ultraviolet, visible, and infrared wavelengths, for example including deep ultraviolet, near infrared, or short-wavelength infrared wavelengths. The DUT may be one or more substrates, e.g., stacked, and include electronic devices such as three-dimensional integrated devices.

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

Abstract: A method, system and computer readable medium for analyzing a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a first principles simulation result; and the first principles simulation result is used to determine a fault in the process performed by the semiconductor processing tool.

Abstract: A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a vacuum vessel that has an interior and is configured to support the substrate therein, and at least one nozzle for forming and emitting a gas cluster beam. The at least one nozzle is configured to direct the gas cluster beam within the vacuum vessel toward the substrate. An ionizer is positioned to ionize the gas cluster beam to form the GCIB. A main gas supply of the system is in fluid communication with the at least one nozzle for supplying gas to the nozzle. The system also includes a plasma-generating apparatus that communicates with the interior of the vacuum vessel and which is configured to receive a cleaning gas and selectively emit plasma for cleaning the interior of the vacuum vessel.

Abstract: A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to control the process performed by the semiconductor processing tool.

Abstract: A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a vacuum vessel that has an interior and is configured to support the substrate therein, and at least one nozzle for forming and emitting a gas cluster beam. The at least one nozzle is configured to direct the gas cluster beam within the vacuum vessel toward the substrate. An ionizer is positioned to ionize the gas cluster beam to form the GCIB. A main gas supply of the system is in fluid communication with the at least one nozzle for supplying gas to the nozzle. The system also includes a plasma-generating apparatus that communicates with the interior of the vacuum vessel and which is configured to receive a cleaning gas and selectively emit plasma for cleaning the interior of the vacuum vessel.

Abstract: A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, inputting a first principles physical model relating to the semiconductor processing tool, performing first principles simulation using the input data and the physical model to provide a first principles simulation result. The first principles simulation result is used to build an empirical model, and at least one of the first principles simulation result and the empirical model is selected to control the process performed by the semiconductor processing tool.

Abstract: A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

Abstract: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

Abstract: A substrate holder for supporting a substrate in a processing system and controlling the temperature thereof is described. The substrate holder comprises a first heating element positioned in a first region for elevating the temperature of the first region. A second heating element positioned in a second region is configured to elevate the temperature in the second region. Furthermore, a first controllably insulating element is positioned below the first heating element, and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the first region. A second controllably insulating element is positioned below the second heating element and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the second region.

Abstract: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

Abstract: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

Abstract: An apparatus for measuring a plasma parameter in a plasma processing reactor comprises a probe including a dielectric tube, a coaxial cable inserted in the dielectric tube, the coaxial cable having an open antenna tip, and a plurality of spacers disposed between the coaxial cable and the dielectric tube. The plurality of spacers define a plurality of ducts through which a cooling fluid is adapted to be circulated to control a temperature of the probe.

Abstract: An apparatus and method of improving impedance matching between a RF signal and a multi-segmented electrode in a plasma reactor powered by the RF signal. The apparatus and method phase shifts the RF signal driving one or more electrode segment of the multi-segmented electrode, amplifies the RF signal, and matches an impedance of the RF signal with an impedance of the electrode segment, where the RF signal is modulated prior to matching of the impedance of the RF signal. The apparatus and method directionally couples an output of the matching of the impedance of the RF signal and the electrode segment, and adjusts the output of the matching of the impedance of the RF signal such that a directionally coupled output signal and a reference signal representing the RF signal at the output of the master RF oscillator produces a demodulated signal of minimal amplitude.

Abstract: An apparatus for processing semiconductors includes a processing chamber including a plurality of chamber walls, a substrate holder, positioned within the processing chamber and configured to support the substrate, and a linear displacement device, coupled between a base wall of the plurality of walls and the substrate holder and configured to move the substrate holder relative to the base wall. A shielding part extending from the substrate holder to be in close parallel relation with at least one of the plurality of walls such that a first area of the processing chamber is substantially shielded from a processing environment to which the substrate is exposed.

Abstract: A substrate holder for supporting a substrate in a processing system and controlling the temperature thereof is described. The substrate holder comprises a first heating element positioned in a first region for elevating the temperature of the first region. A second heating element positioned in a second region is configured to elevate the temperature in the second region. Furthermore, a first controllably insulating element is positioned below the first heating element, and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the first region. A second controllably insulating element is positioned below the second heating element and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the second region.

Abstract: An apparatus determines how well a semiconductor wafer (4) is clamped to a support member (1). The apparatus has at least one ultrasonic transducer (2a,2b,2c,2d) configured to emit ultrasonic energy (3) toward an interface between the water (4) and the support member (1) so that the interface generates echo signals, and a data processing unit (11) configured to analyze the echo signals to arrive at a determination as to how well the semiconductor wafer (4) is clamped to the support member (1before semiconductor process is started. A first method ensures that a wafer (4) is securely clamped to a support member before a semiconductor process is started. A second method verifies proper de-clamping of a semiconductor wafer (4) from a support member (1) before the semiconductor wafer (4) is removed from the support member (1) upon completion of a semiconductor process.

Abstract: A method of and a structure for controlling the temperature of an electrode (4). The electrode is heated prior to etching the first wafer and both a (temporally) stationary and a (spatially) homogeneous temperature of the silicon electrode are maintained. Resistive heater elements (1) are either embedded within the housing of the electrode (3) or formed as part of the electrode. The resistive heater elements form a heater of a multi-zone type in order to minimize the temperature non-uniformity. The resistive heater elements are divided into a plurality of zones, wherein the power to each zone can be adjusted individually, allowing the desirable temperature uniformity of the electrode to be achieved. Preheating the electrode to the appropriate operating temperature eliminates both the “first wafer effect” and non-uniform etching of a semiconductor wafer.