Abstract: A microwave window for transmitting microwave radiation includes a solid body and a flange. The solid body includes a first surface and a second surface spaced apart from each other in a first direction thereby defining a thickness of the solid body in the first direction. The flange is disposed at a periphery of the solid body such that a peripheral portion of the solid body extends a length into the flange in a second direction perpendicular to the first direction. The thickness and the length are selected such that the power of reflections of microwave radiation by the microwave window are no more than about ten times the power of reflections at the minimum value.

Abstract: A plasma processing system and method for operating a diagnostic system in conjunction with a plasma processing system are provided. The diagnostic system is in communication with a plasma processing chamber of the plasma processing system and includes a diagnostic sensor to detect a plasma process condition. The diagnostic system is configured to substantially reduce contamination of the diagnostic sensor. The method includes substantially reducing contamination of the diagnostic sensor and detecting a condition of the plasma process and/or a substrate in the processing chamber.

Abstract: A plasma processing system and method for operating an optical system in conjunction with a plasma processing system are provided. The plasma processing system includes an optical system in communication with a plasma processing chamber of the plasma processing system. The optical system has a window and is constructed and arranged to detect a plasma process condition through the window and a transmission condition of the window. The method includes detecting an optical emission from the plasma processing region and monitoring contamination of a window provided by the optical system.

Abstract: An electronic monitoring device that archives chemical exposures of a consumable part inside a semiconductor processing tool. The monitoring device includes a memory unit dedicated to the consumable part and which stores a history of the chemical exposures of the consumable part, a processor in communication with the memory unit, and a power supply circuit that supplies power to the processor and the memory unit.

Abstract: A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

Abstract: Ultrasonic transducers and tomographic techniques determine the temperature of a semiconductor substrate holder at all points on the substrate holder, thereby allowing comprehensive real-time control of the temperature of the substrate holder during a process, such as a semiconductor wafer etching process. An apparatus for measuring temperatures of respective portions of a substrate holder that supports a substrate (e.g., a semiconductor wafer) on which a process (e.g., an etching process) is carried out, and for controlling the temperatures of the respective portions in response to the measured temperatures, includes: an arrangement of at least one ultrasonic transducer arranged and configured to transmit ultrasonic energy through the substrate holder, and a data processor configured to calculate, during the process, the temperatures of the respective portions of the substrate holder based on respective propagation time delays of the ultrasonic energy through the respective portions.

Abstract: A plasma processing system, method, and computer readable medium for measuring plasma impedance. The system includes a chamber configured to contain a plasma and including a chuck within an interior area of the chamber, the chuck including a support surface and a bottom surface, and a first voltage-current probe positioned at a first position located exterior to the chamber and on a radio-frequency transmission line between the chamber and a power source. The system also includes a simulation module connected to the first voltage-current probe and arranged to solve, based on measurements transmitted from the first voltage-current probe, a radio-frequency model of the radio-frequency transmission line between the first position and a second position located within the chamber.

Abstract: A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to facilitate the process performed by the semiconductor processing tool.

Abstract: A method, system, and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a virtual sensor measurement relating to the process performed by the semiconductor processing tool, and the virtual sensor measurement is used to facilitate the process performed by the semiconductor processing tool.

Abstract: An apparatus determines how well a semiconductor wafer (4) is clamped to a support member (1). The apparatus has at least one ultrasonic transducer (2a,2b,2c,2d) configured to emit ultrasonic energy (3) toward an interface between the wafer (4) and the support member (1) so that the interface generates echo signals, and a data processing unit (11) configured to analyze the echo signals to arrive at a determination as to how well the semiconductor wafer (4) is clamped to the support member (1) before semiconductor process is started. A first method ensures that a wafer (4) is securely clamped to a support member before a semiconductor process is started.A second method verifies proper de-clamping of a semiconductor wafer (4) from a support member (1) before the semiconductor wafer (4) is removed from the support member (1) upon completion of a semiconductor process.

Abstract: An apparatus and method of improving impedance matching between a RF signal and a multi-segmented electrode in a plasma reactor powered by the RF signal. The apparatus and method phase shifts the RF signal driving one or more electrode segment of the multi-segmented electrode, amplifies the RF signal, and matches an impedance of the RF signal with an impedance of the electrode segment, where the RF signal is modulated prior to matching of the impedance of the RF signal. The apparatus and method directionally couples an output of the matching of the impedance of the RF signal and the electrode segment, and adjusts the output of the matching of the impedance of the RF signal such that a directionally coupled output signal and a reference signal representing the RF signal at the output of the master RF oscillator produces a demodulated signal of minimal amplitude.

Abstract: A plasma processing system that includes a plasma chamber, an open resonator movably mounted within the plasma chamber, and a detector. The open resonator produces a microwave signal, and the detector detects the microwave signal and measures a mean electron plasma density along a path of the signal within a plasma field. Alternatively, the plasma processing system includes a plasma chamber, a plurality of open resonators provided within the plasma chamber, a plurality of detectors, and a processor. The processor is configured to receive a plurality of mean electron plasma density measurements from the detectors that correspond to locations of the plurality of open resonators.

Abstract: A method of and a structure for controlling the temperature of an electrode (4). The electrode is heated prior to etching the first wafer and both a (temporally) stationary and a (spatially) homogeneous temperature of the silicon electrode are maintained. Resistive heater elements (1) are either embedded within the housing of the electrode (3) or formed as part of the electrode. The resistive heater elements form a heater of a multi-zone type in order to minimize the temperature non-uniformity. The resistive heater elements are divided into a plurality of zones, wherein the power to each zone can be adjusted individually, allowing the desirable temperature uniformity of the electrode to be achieved. Preheating the electrode to the appropriate operating temperature eliminates both the “first wafer effect” and non-uniform etching of a semiconductor wafer.

Abstract: An apparatus (10) and method for detecting and analyzing the spectra of light emitted by a plasma (36) in a plasma duct (16) having a plurality of windows (40) formed therein. In one embodiment, the apparatus includes an optical system (50) arranged adjacent each window that directs light emanating from the plasma and passing through each window to two or more optical filters (F1, F2) having different bandwidths so that different portions of the light spectra (S1, S2) can be measured. The filter light is incident respective two or more detectors (D1, D2), which produce an electrical signal representative of the intensity of light incident thereon, and thus is a measure of the content of a select band of the light spectrum. Performing this measurement for different regions (R) of the plasma yields different spectra and thus provides information about the plasma properties, thereby allowing for adjustment of those properties.

Abstract: A plasma processing system and method for operating a windowless optical diagnostic system in conjunction with a plasma processing system. The plasma processing system comprises a windowless optical diagnostic system that is constructed and arranged to detect a plasma process condition. The method includes providing a first pressure within a chamber of the plasma processing system and providing a second pressure within a windowless optical diagnostic chamber in which the windowless optical diagnostic system is positioned. The method further includes controlling the second pressure within the windowless optical diagnostic chamber relative to the first pressure within the chamber and optically detecting a plasma process condition.

Abstract: A plasma processing system that includes a plasma chamber, an open resonator movably mounted within the plasma chamber, and a detector. The open resonator produces a microwave signal, and the detector detects the microwave signal and measures a mean electron plasma density along a path of the signal within a plasma field. Alternatively, the plasma processing system includes a plasma chamber, a plurality of open resonators provided within the plasma chamber, a plurality of detectors, and a processor. The processor is configured to receive a plurality of mean electron plasma density measurements from the detectors that correspond to locations of the plurality of open resonators.

Abstract: Ultrasonic transducers and tomographic techniques determine the temperature of a semiconductor substrate holder at all points on the substrate holder, thereby allowing comprehensive real-time control of the temperature of the substrate holder during a process, such as a semiconductor wafer etching process. An apparatus for measuring temperatures of respective portions of a substrate holder that supports a substrate (e.g., a semiconductor wafer) on which a process (e.g., an etching process) is carried out, and for controlling the temperatures of the respective portions in response to the measured temperatures, includes: an arrangement of at least one ultrasonic transducer arranged and configured to transmit ultrasonic energy through the substrate holder, and a data processor configured to calculate, during the process, the temperatures of the respective portions of the substrate holder based on respective propagation time delays of the ultrasonic energy through the respective portions.

Abstract: An apparatus (10) and method for detecting and analyzing the spectra of light emitted by a plasma (36) in a plasma duct (16) having a plurality of windows (40) formed therein. In one embodiment, the apparatus includes an optical system (50) arranged adjacent each window that directs light emanating from the plasma and passing through each window to two or more optical filters (F1, F2) having different bandwidths so that different portions of the light spectra (S1, S2) can be measured. The filter light is incident respective two or more detectors (D1, D2), which produce an electrical signal representative of the intensity of light incident thereon, and thus is a measure of the content of a select band of the light spectrum. Performing this measurement for different regions (R) of the plasma yields different spectra and thus provides information about the plasma properties, thereby allowing for adjustment of those properties.