Abstract: Clock control arrangements for integrated circuit devices are discussed herein. In one example, a method of operating an integrated circuit device includes monitoring indications of pending operations for a processing core of an integrated circuit, and determining a predicted change in workload for the processing core based at least on a portion of the indications of the pending operations. The method also includes altering a clock frequency of a clock signal provided to the processing core based at least on the predicted change in the workload.

Abstract: Clock control arrangements for integrated circuit devices are discussed herein. In one example, a method of operating an integrated circuit device includes monitoring indications of pending operations for a processing core of an integrated circuit, and determining a predicted change in workload for the processing core based at least on a portion of the indications of the pending operations. The method also includes altering a clock frequency of a clock signal provided to the processing core based at least on the predicted change in the workload.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method includes: directing incident light through a pattern of clear regions transparent to the incident light in an opaque-to-the-incident-light region of a photomask, through a lens and onto a photodiode formed in a substrate, the photodiodes electrically connected to a light emitting diode formed in the substrate, the light emitting diode emitting light of different wavelength than a wavelength of the incident lights; measuring an intensity of emitted light from light emitting diode; and adjusting alignment of the photomask to the substrate based on the measured intensity of emitted light.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method includes: directing incident light through a pattern of clear regions transparent to the incident light in an opaque-to-the-incident-light region of a photomask, through a lens and onto a photodiode formed in a substrate, the photodiodes electrically connected to a light emitting diode formed in the substrate, the light emitting diode emitting light of different wavelength than a wavelength of the incident lights; measuring an intensity of emitted light from light emitting diode; and adjusting alignment of the photomask to the substrate based on the measured intensity of emitted light.

Abstract: A method, apparatus, and structure are provided for implementing selective rework for chip stacks. A backside metal layer to create resistive heating is added to a chip backside in a chip stack. A rework tool applies a predefined current to the backside metal layer to reflow solder connections and enables separating selected chips in the chip stack.

Abstract: A particular chip is designed having a first variant (front side connected chip) of the chip and a second variant (back side connected chip). The first variant of the chip is attached to a carrier. The second variant of the chip is attached to the carrier inverted relative to the first variant of the chip. The first and second variants of the chip are attached to the carrier such that a vertical surface (side) of the first variant of the chip faces a corresponding vertical surface of the second variant of the chip. A circuit on the first variant of the chip is electrically connected to a corresponding circuit on the second variant of the chip.

Abstract: A method, program product and apparatus include extending lengths that project from a microchip trace into dielectric material. The extending lengths may not connect to another trace. Placement of the extending lengths may be optimized to increase the dissipation of heat from the trace, while maintaining an acceptable level of capacitance.

Abstract: A method, apparatus, and structure are provided for implementing selective rework for chip stacks. A backside metal layer to create resistive heating is added to a chip backside in a chip stack. A rework tool applies a predefined current to the backside metal layer to reflow solder connections and enables separating selected chips in the chip stack.

Abstract: A method is provided that utilizes silicon through via technology, to build a Toroid into the chip with the addition of a layer of magnetic material such as Nickel above and below the T-coil stacked multi-ring structure. This allows the connection between the inner via and an array of outer vias. This material is added on a BEOL metal layer or as an external coating on the finished silicon. Depending on the configuration and material used for the via, the inductance will increase approximately two orders of magnitude (e.g., by utilizing a nickel via core). Moreover, a ferrite material with proper thermal conduction properties is used in one embodiment.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method comprising: directing light through a clear region of the photomask in a photolithography tool, through a lens of the tool and onto a set of at least three diffraction minor arrays on the substrate, each diffraction minor array of the set of at least three diffraction minor arrays comprising a single row of minors, all mirrors in any particular diffraction minor array spaced apart a same distance, minors in different diffraction minor arrays spaced apart different distances; measuring an intensity of light diffracted from the set of at least three diffraction mirror arrays onto an array of photo detectors; and adjusting a temperature of the photomask or photomask and lens based on the measured intensity of light.

Abstract: A method and structure are provided for implementing vertical airgap structures between chip metal layers. A first metal layer is formed. A first layer of silicon dioxide dielectric is deposited onto the first metal layer. A vertical air gap is etched from the first layer of silicon dioxide dielectric above the first metal layer. A second layer of silicon dioxide dielectric is deposited and the vertical air gap is sealed. A next trace layer is etched from the second layer of silicon dioxide dielectric and a via opening is etched from the second and first layers of silicon dioxide dielectric. Then metal is deposited into the next trace layer and metal is deposited into the via opening.

Abstract: A computer implemented method, apparatus and program product provide automated processes for determining the most cost-effective use of airgaps in a microchip. The performance gains realized by using airgaps for a given net or layer may be calculated. These improvements may be paired to a monetary cost associated with implementing the applicable airgaps at that net/layer. The paired benefit and cost of the airgap scenario may be compared to other possible airgap uses at other layers/nets to determine which airgaps provide the best improvement for the lowest cost.

Abstract: Structures and a computer program product are provided for implementing enhanced wiring capability for electronic laminate packages. Electronic package physical design data are received. Instances of line width and space limit violations in the electronic package physical design data are identified. The identified instances of line width and space limit violations are evaluated using predefined qualified options and tolerance limitations and the electronic package physical design data are modified to optimize shapes to replace the instances of line width and space limit violations.

Abstract: A method, apparatus and computer program product are provided for implementing vertically coupled noise control through a mesh plane in an electronic package design. Electronic package physical design data are received. Instances of vertically coupled noise in the electronic package physical design data are identified. The identified instances of vertically coupled noise are quantified. Then the electronic package physical design data are modified to limit the vertically coupled noise.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method includes: directing incident light through a pattern of clear regions transparent to the incident light in an opaque-to-the-incident-light region of a photomask, through a lens and onto a photodiode formed in a substrate, the photodiodes electrically connected to a light emitting diode formed in the substrate, the light emitting diode emitting light of different wavelength than a wavelength of the incident lights; measuring an intensity of emitted light from light emitting diode; and adjusting alignment of the photomask to the substrate based on the measured intensity of emitted light.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method includes: directing incident light through a pattern of clear regions transparent to the incident light in an opaque-to-the-incident-light region of a photomask, through a lens and onto a photodiode formed in a substrate, the photodiodes electrically connected to a light emitting diode formed in the substrate, the light emitting diode emitting light of different wavelength than a wavelength of the incident lights; measuring an intensity of emitted light from light emitting diode; and adjusting alignment of the photomask to the substrate based on the measured intensity of emitted light.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method includes: directing incident light through a pattern of clear regions transparent to the incident light in an opaque-to-the-incident-light region of a photomask, through a lens and onto a photodiode formed in a substrate, the photodiodes electrically connected to a light emitting diode formed in the substrate, the light emitting diode emitting light of different wavelength than a wavelength of the incident lights; measuring an intensity of emitted light from light emitting diode; and adjusting alignment of the photomask to the substrate based on the measured intensity of emitted light.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method comprising: directing light through a clear region of the photomask in a photolithography tool, through a lens of the tool and onto a set of at least three diffraction mirror arrays on the substrate, each diffraction mirror array of the set of at least three diffraction mirror arrays comprising a single row of mirrors, all mirrors in any particular diffraction mirror array spaced apart a same distance, mirrors in different diffraction mirror arrays spaced apart different distances; measuring an intensity of light diffracted from the set of at least three diffraction mirror arrays onto an array of photo detectors; and adjusting a temperature of the photomask or photomask and lens based on the measured intensity of light.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method comprising: directing light through a clear region of the photomask in a photolithography tool, through a lens of the tool and onto a set of at least three diffraction mirror arrays on the substrate, each diffraction mirror array of the set of at least three diffraction mirror arrays comprising a single row of mirrors, all mirrors in any particular diffraction mirror array spaced apart a same distance, mirrors in different diffraction mirror arrays spaced apart different distances; measuring an intensity of light diffracted from the set of at least three diffraction mirror arrays onto an array of photo detectors; and adjusting a temperature of the photomask or photomask and lens based on the measured intensity of light.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method comprising: directing light through a clear region of the photomask in a photolithography tool, through a lens of the tool and onto a set of at least three diffraction mirror arrays on the substrate, each diffraction mirror array of the set of at least three diffraction minor arrays comprising a single row of mirrors, all mirrors in any particular diffraction mirror array spaced apart a same distance, mirrors in different diffraction mirror arrays spaced apart different distances; measuring an intensity of light diffracted from the set of at least three diffraction mirror arrays onto an array of photo detectors; and adjusting a temperature of the photomask or photomask and lens based on the measured intensity of light.