Abstract: A method, an apparatus and a computer program product are provided for implementing At-Speed Wafer Final Test (WFT) with total integrated circuit chip coverage including high speed off-chip receiver and driver input/output (I/O) circuits. An integrated circuit (IC) chip includes off-chip Controlled Collapse Chip Connection (C4) nodes and a driver and a receiver of the off-chip receiver and driver input/output (I/O) circuits connected to respective off-chip C4 nodes. Through Silicon Vias (TSVs) are added to the connections of the driver and the receiver and the respective off-chip C4 nodes to a backside of the IC chip. A metal wire is added to the IC chip backside connecting the TSVs and creating a connection path between the driver and the receiver that is used for the at-speed WFT testing of the I/O circuits.

Abstract: A memory system having a data bus coupling a memory controller and a memory. The data bus has a number of data bus bits. The data bus is programmably apportioned to a first portion dedicated to transmitting data from the memory controller to the memory and a second portion dedicated to transmitting data from the memory to the memory controller. The apportionment can be assigned by suitable connection of pins on a memory chip in the memory and the memory controller to logical values. Alternatively, the apportionment can be scanned into the memory controller and the memory at bring up time. In another alternative, the apportionment can be changed by suspending data transfer and dynamically changing the sizes of the first portion and the second portion.

Abstract: A method and structure are provided for implementing vertical airgap structures between chip metal layers. A first metal layer is formed. A first layer of silicon dioxide dielectric is deposited onto the first metal layer. A vertical air gap is etched from the first layer of silicon dioxide dielectric above the first metal layer. A second layer of silicon dioxide dielectric is deposited and the vertical air gap is sealed. A next trace layer is etched from the second layer of silicon dioxide dielectric and a via opening is etched from the second and first layers of silicon dioxide dielectric. Then metal is deposited into the next trace layer and metal is deposited into the via opening.

Abstract: A method, an apparatus and a computer program product are provided for implementing At-Speed Wafer Final Test (WFT) with total integrated circuit chip coverage including high speed off-chip receiver and driver input/output (I/O) circuits. An integrated circuit (IC) chip includes off-chip Controlled Collapse Chip Connection (C4) nodes and a driver and a receiver of the off-chip receiver and driver input/output (I/O) circuits connected to respective off-chip C4 nodes. Through Silicon Vias (TSVs) are added to the connections of the driver and the receiver and the respective off-chip C4 nodes to a backside of the IC chip. A metal wire is added to the IC chip backside connecting the TSVs and creating a connection path between the driver and the receiver that is used for the at-speed WFT testing of the I/O circuits.

Abstract: A computer implemented method, apparatus and program product provide automated processes for determining the most cost-effective use of airgaps in a microchip. The performance gains realized by using airgaps for a given net or layer may be calculated. These improvements may be paired to a monetary cost associated with implementing the applicable airgaps at that net/layer. The paired benefit and cost of the airgap scenario may be compared to other possible airgap uses at other layers/nets to determine which airgaps provide the best improvement for the lowest cost.

Abstract: A method, program product and apparatus include extending lengths that project from a microchip trace into dielectric material. The extending lengths may not connect to another trace. Placement of the extending lengths may be optimized to increase the dissipation of heat from the trace, while maintaining an acceptable level of capacitance.

Abstract: A heat sink apparatus having a plurality of chips attached to a first surface of a flexible carrier and a plurality of heat sink fins. One or more additional chips may be attached to a second surface of the flexible carrier. The flexible carrier has at least one complementary fold, the complementary fold having a counterclockwise fold and a clockwise fold as seen from the side. A first chip back surface of a first chip and a second chip back surface of a second chip are in thermal contact with a particular heat sink fin, that is, sharing the same heat sink fin. Thermal contact between the chips and heat sink fins is effected by force, by thermally conducting adhesive, by thermal grease, or by a combination of force and/or thermally conducting adhesive and/or thermal grease.

Abstract: A computer system having a memory system having a memory controller and a memory. The memory controller is coupled to a processor and to the memory. The memory comprises one or more daisy chains of memory chips. An address/command word is chained through a daisy chain of memory chips and is handled by one of the memory chips in the daisy chain of memory chips. Data to be written to a memory chip is sent as part of the address/command word, or is transferred on an outgoing data bus chain. Data read from a memory chip is transferred on an incoming data bus chain. A daisy chain of memory chips can include memory chips on multiple carriers, or the daisy chain of memory chips can all be attached to a single carrier.

Abstract: A memory chip suitable for use in a daisy chain of memory chips. Timing of an array on the memory chip is dynamically determined by circuitry on the memory chip that tracks an access timing of the array. The memory chip is configured to receive an address/command word, determine if the address/command word is directed to the memory chip. If so, the array on the memory chip is accessed according to the address command word. If the address/command word is not directed to the memory chip, the memory chip re-drives the address/command word from an output of the memory chip.

Abstract: A carrier having at least one self timed memory chip in a daisy chain of memory chips. A first carrier has at least a portion of a daisy chain of memory chips attached to the first carrier. An address/command bus input on the first carrier carries an address/command word to a first memory chip in the daisy chain of memory chips. If the first memory chip determines that the address/command word is not directed to the first memory chip, the first memory chip re-drives the address/command word to a second memory chip in the daisy chain of memory chips using a point to point address/command bus link. If there are no more memory chips on the first carrier, the address/command word is re-driven to an address/command bus off-carrier connector. An array on a memory chip has an access time dynamically determined by how fast the array can be accessed.

Abstract: This invention utilizes silicon through via technology, to build a Toroid into the chip with the addition of a layer of magnetic material such as Nickel above and below the T-coil stacked multi-ring structure. This allows the connection between the inner via and an array of outer vias. This material is added on a BEOL metal layer or as an external coating on the finished silicon. Depending on the configuration and material used for the via, the inductance will increase approximately two orders of magnitude (e.g., by utilizing a nickel via core). Moreover, a ferrite material with proper thermal conduction properties is used in one embodiment.

Abstract: A memory controller configured to control a daisy chain of memory chips. The memory controller receives read and write requests from a processor, determines a daisy chain of memory chips that the request is directed to, determines which memory chip in the chain of memory chips the request is directed to, and transmits an address/command word recognizable by the correct memory chip. The memory controller sends write data words to the daisy chain of memory chips that can be associated by the correct memory chip for writing into the correct memory chip. The memory controller receives read data words from the daisy chain of memory chips and returns the read data to the processor. The memory controller transmits a bus clock to the daisy chain of memory chips for controlling transmission of address/command words and data words.

Abstract: A memory chip having a data bus having a plurality of bits. The number of bits is apportioned between a read portion and a write portion. The write portion is dedicated to receiving data that is to be written into an array on the memory chip; the read portion is dedicated to driving data that has been read from the array on the memory chip. The apportionment is programmable. Apportionment can be specified by programming signal pins on the memory chip, connecting the signal pins to appropriate logical values. The apportionment can alternatively be specified by scanning apportionment information into the memory chip at bring up time. The apportionment and also alternatively be specified by receiving apportionment information in an address/command word.

Abstract: A carrier having at least one memory chip in a daisy chain of memory chips. A first carrier has at least a portion of an entire daisy chain of memory chips attached to the first carrier. An address/command bus input on the first carrier carries an address/command word to a first memory chip in the daisy chain of memory chips. If the first memory chip determines that the address/command word is not directed to the first memory chip, the first memory chip re-drives the address/command word to a second memory chip in the daisy chain of memory chips using a point to point address/command bus link. If there are no more memory chips on the first carrier, the address/command word is re-driven to a memory chip on a second carrier.

Abstract: A particular chip is designed having a first variant (front side connected chip) of the chip and a second variant (back side connected chip). The first variant of the chip is attached to a carrier. The second variant of the chip is attached to the carrier inverted relative to the first variant of the chip. The first and second variants of the chip are attached to the carrier such that a vertical surface (side) of the first variant of the chip faces a corresponding vertical surface of the second variant of the chip. A circuit on the first variant of the chip is electrically connected to a corresponding circuit on the second variant of the chip.

Abstract: A memory controller for controlling a daisy chain of self timed memory chips. The memory controller has information as to how long each self timed memory chip in the daisy chain of memory chips takes to make a read access and a write access to an array on the self timed memory chip. The memory controller determines current access time information on a memory chip by sending a command to the memory chip. The memory chip returns a data word containing the current access time information. Alternatively, the memory controller transmits an address/command word to the memory chip and, after completing an access, transmits a responsive data word to the memory controller. The memory controller determines the access time information using the interval from transmission of the address/command word to reception of the responsive data word.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method includes: directing incident light through a pattern of clear regions transparent to the incident light in an opaque-to-the-incident-light region of a photomask, through a lens and onto a photodiode formed in a substrate, the photodiodes electrically connected to a light emitting diode formed in the substrate, the light emitting diode emitting light of different wavelength than a wavelength of the incident lights; measuring an intensity of emitted light from light emitting diode; and adjusting alignment of the photomask to the substrate based on the measured intensity of emitted light.

Abstract: A method and structure are provided for implementing component placement suspended within electrical pin grid array packages for enhanced electrical performance. A solder column grid array is coupled between a printed circuit board and a first level package. A component is connected between a predefined pair of adjacent columns in the solder column grid array suspended between the printed circuit board and the first level package.

Abstract: A memory system having a memory controller and a memory. The memory comprises one or more daisy chains of self timed memory chips. An address/command word is chained through a daisy chain of memory chips and is handled by one of the memory chips in the daisy chain of memory chips. Data to be written to a memory chip is sent as part of the address/command word, or is transferred on an outgoing data bus chain. Data read from a memory chip is transferred on an incoming data bus chain. Access timing on a memory chip is determined by a self time block on the memory chip.

Abstract: A self timed memory chip having an apportionable data bus. Access timing to an array on the memory chip is dynamically determined by circuitry on the memory chip. A ring oscillator on the memory chip has a frequency that is indicative of how fast an array on the memory chip can be accessed. The ring oscillator includes a bit line that is periodically charged and a memory element that subsequently discharges the bit line. The memory chip has a data bus interface having a number of bits. The data bus interface has a first number of bits apportioned to write data and a second number of bits apportioned to read data. The first number of bits and the second number of bits is programmable.