Abstract: A method of providing a subject polypeptide variant with improved stability compared with a parent subject polypeptide, employing translation and selection using an RNA expression system, wherein two or more stability selection pressures are applied simultaneously during translation, two or more stability selection pressures are applied simultaneously during selecting, or at least one stability selection pressure is applied during translation and continues to be applied during selecting, and at least one further stability selection pressure is applied during selecting.

Abstract: A toner cartridge for an image forming apparatus, the cartridge having: a housing defining a toner reservoir; a developer roller supported by the housing; a doctor blade supported by the housing and positioned adjacent the developer roller; and a retainer connected to the housing and positioned over a side of the doctor blade opposite the reservoir.

Abstract: A method of providing a subject polypeptide variant with improved stability compared with a parent subject polypeptide, employing translation and selection using an RNA expression system, wherein two or more stability selection pressures are applied simultaneously during translation, two or more stability selection pressures are applied simultaneously during selecting, or at least one stability selection pressure is applied during translation and continues to be applied during selecting, and at least one further stability selection pressure is applied during selecting.

Abstract: In a two piece toner cartridge assembly, as typically used in a computer and/or facsimile printing device, comprising separable photoconductor and developer units a unique coupling device is provided whereby the cartridge assembly may be removed from the printing device without the photoconductor unit separating from the developer unit for paper jam clearance or unit replacement. However, if desired the developer unit may be separately removed from the printing device for servicing or replacement without removal of the photoconductor unit.

Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

Abstract: A tape printing apparatus having a thermal print head for printing an image on an image receiving tape, the print head having a first mode of operation for printing on an image receiving tape with an ink ribbon, and a second mode of operation for printing on thermally sensitive image receiving tape. A detector detects whether ink ribbon is present or absent in a receiving mechanism and provides a signal to a control mechanism indicative of the presence or absence of ink ribbon, the control mechanism being arranged to control the print head to have the first mode of operation when ink ribbon is present and the second mode of operation when no ink ribbon is present.

Abstract: In a two piece toner cartridge assembly, as typically used in a computer and/or facsimile printing device, comprising separable photoconductor and developer units a unique coupling device is provided whereby the cartridge assembly may be removed from the printing device without the photoconductor unit separating from the developer unit for paper jam clearance or unit replacement. However, if desired the developer unit may be separately removed from the printing device for servicing or replacement without removal of the photoconductor unit.

Abstract: A method for forming an oxynitride gate dielectric in a semiconductor device and gate dielectric structure formed by the method are disclosed. In the method, an oxynitride layer is first formed on a silicon surface and then re-oxidized with a gas mixture containing oxygen and at least one halogenated species such that an oxynitride layer with a controlled nitrogen profile and a layer of substantially silicon dioxide formed underneath the oxynitride film is obtained. The oxynitride film layer can be formed by either contacting a surface of silicon with at least one gas that contains. nitrogen and/or oxygen at a temperature of not less than 500° C. or by a chemical vapor deposition technique. The re-oxidation process may be carried out by a thermal process in an oxidizing halogenated atmosphere containing oxygen and a halogenated species such as HCl, CH2Cl2, C2H3Cl3, C2H2Cl2. CH3Cl and CHCl3.

Abstract: The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.

Abstract: A method for forming an oxynitride gate dielectric in a semiconductor device and gate dielectric structure formed by the method are disclosed. In the method, an oxynitride layer is first formed on a silicon surface and then re-oxidized with a gas mixture containing oxygen and at least one halogenated species such that an oxynitride layer with a controlled nitrogen profile and a layer of substantially silicon dioxide formed underneath the oxynitride film is obtained. The oxynitride film layer can be formed by either contacting a surface of silicon with at least one gas that contains nitrogen and/or oxygen at a temperature of not less than 500° C. or by a chemical vapor deposition technique. The re-oxidation process may be carried out by a thermal process in an oxidizing halogenated atmosphere containing oxygen and a halogenated species such as HCl, CH2Cl2, C2H3Cl3, C2H2Cl2. CH3Cl and CHCl3.

Abstract: The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.

Abstract: The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.

Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

Abstract: Toner exhaustion is sensed in cartridge (1) having a toner chamber (3), a rotation paddle (7) extending across the long dimension. Chamber (3) has a transparent window (21) at its bottom and a reflective surface (23) in chamber (3), also at the bottom. An optical emitter and receiver (31) periodically senses for returned light, which indicates toner low. Paddle (7) carries a wiper to clean window and reflective surface. This provides improved accuracy by a cost-effective system.

Abstract: An article used to seal the interface between the developer roll, doctor blade and developer housing in a laser printer toner cartridge is described. The sealing member described in the present application performs static sealing between the components while the cartridge is idle and performs dynamic sealing while the toner cartridge is used for printing, keeping the sealing surfaces free from toner by actively pushing the toner back into the developer sump. The seal has a rotary seal portion which seals between the frame of the cartridge and the developer roll, and a blade seal portion which seals between the frame of the cartridge and the doctor blade. The rotary seal portion is biased toward the surface of the developer roll and incorporates, on its face adjacent to the developer roll, ridges which act to push the toner away from the edge of the developer roll in use. The blade seal portion is biased toward the doctor blade.

Abstract: An article used to seal the interface between the developer roll, doctor blade and developer housing in a laser printer toner cartridge is described. The sealing member described in the present application performs static sealing between the components while the cartridge is idle and performs dynamic sealing while the toner cartridge is used for printing, keeping the sealing surfaces free from toner by actively pushing the toner back into the developer sump. The seal comprises a rotary seal portion which seals between the frame of the cartridge and the developer roll, and a blade seal portion which seals between the frame of the cartridge and the doctor blade. The rotary seal portion is biased toward the surface of the developer roll and incorporates, on its face adjacent to the developer roll, ridges which act to push the toner away from the edge of the developer roll in use. The blade seal portion is biased toward the doctor blade.

Abstract: A toner cartridge for use in a laser printer has a toner reservoir or hopper in which a first paddle rotates about a fixed first axis to sweep most of the toner volume of the cartridge to agitate and push the toner out of the toner reservoir or hopper through an exit port. A second paddle is pivotally mounted on the first paddle to sweep a volume of the toner reservoir or hopper in which a portion of the longitudinal wall of the toner reservoir or hopper of the toner cartridge is non-circular so as to produce a reduced cross section in the toner reservoir or hopper. The second paddle also initially engages the curved portion of the inner surface of the longitudinal wall of the toner reservoir or hopper and preferably has a tear drop cross section.

Abstract: The invention relates to a tape holding case housing a supply of image receiving tape and includes an angled surface to bend the surface of the tape approximately 90°, the angled surface being provided upstream of the printing position of the tape. The tape holding case also includes a casing that is designed to attach the tape holding case to an identically shaped tape holding case.

Abstract: The invention relates to a tape holding case housing a supply of image receiving tape and includes an angled surface to bend the surface of the tape approximately 90°, the angled surface being provided upstream of the printing position of the tape. The tape holding case also includes a casing that is designed to attach the tape holding case to an identically shaped tape holding case.

Abstract: A method for forming an oxynitride gate dielectric in a semiconductor device and gate dielectric structure formed by the method are disclosed. In the method, an oxynitride layer is first formed on a silicon surface and then re-oxidized with a gas mixture containing oxygen and at least one halogenated species such that an oxynitride layer with a controlled nitrogen profile and a layer of substantially silicon dioxide formed underneath the oxynitride film is obtained. The oxynitride film layer can be formed by either contacting a surface of silicon with at least one gas that contains nitrogen and/or oxygen at a temperature of not less than 500° C. or by a chemical vapor deposition technique. The re-oxidation process may be carried out by a thermal process in an oxidizing halogenated atmosphere containing oxygen and a halogenated species such as HCl, CH2Cl2, C2H3Cl3, C2H2Cl2, CH3Cl and CHCl3.