Abstract: The invention refers to a tape printing apparatus (2) used with tape cassettes (20, 220, 243, 260, 443). In order to make insertion and removal easier, the tape cassette is provided with a surface controlling the position of a printhead (22, 222, 322, 422) and/or a platen. When the cassette is inserted, printhead and platen are automatically separated such that the tape (24) can be introduced between them, and afterwards moved in the operative position. Further, an over center mechanism is proposed for moving printhead and platen. The tape cassette (443) can provide a 90.degree. bend in the tape (24) upstream the printing position, and the motor (42) can be located besides the zone for accommodating the image receiving tape (24). The cassette can be made attachable to other cassettes, and the means for attaching can guide and hold the cassette in the tape printer.

Abstract: A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten carbonyl. MOS and CMOS devices containing one or more of the CVD W gates or W electrodes manufactured by the present invention are also provided herein.

Abstract: A device within an image forming apparatus for positioning a doctor blade against a developer roller and preventing toner leakage. The device includes a developer housing for containing the developer roller and the doctor blade. A biasing member is positioned adjacent to the doctor blade for forcing the doctor blade against the developer roller for controlling the mass flow and charge level of the toner. The doctor blade is supported by retention stops on a front edge and a pair of supports on the back edge. Toner is prevented from leaking through the device by a flap seal positioned along the doctor blade back side and a seal positioned between each end of doctor blade end and developer housing. The invention provides for the doctor blade to be freely positioned between the retention stops, developer housing, and seals providing for the doctor blade to contact the developer roller in a consistent manner.

Abstract: A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten carbonyl. MOS and CMOS devices containing one or more of the CVD W gates or W electrodes manufactured by the present invention are also provided herein.