Abstract: In one aspect, a method includes forming an electrical path between p-type mercury cadmium telluride and a metal layer. The forming of the electrical path includes depositing a layer of polycrystalline p-type silicon directly on to the p-type mercury cadmium telluride and forming the metal layer on the layer of polycrystalline p-type silicon. In another aspect, an apparatus includes an electrical path. The electrical path includes a p-type mercury cadmium telluride layer, a polycrystalline p-type silicon layer in direct contact with the p-type mercury cadmium telluride layer, a metal silicide in direct contact with the polycrystalline p-type silicon layer, and an electrically conductive metal on the metal silicide. In operation, holes, indicative of electrical current on the electrical path, flow from the p-type mercury cadmium telluride layer to the electrically conductive metal.

Abstract: An electrical device includes a substrate, a dielectric layer supported by the substrate, and an electrically conductive vertical interconnect extending through the dielectric layer. The dielectric layer may be formed at low-temperature below the thermal degradation temperature of thermally-sensitive material in the device. The dielectric layer may be a low-stress layer that imparts no stress or less stress than a failure stress of fragile material in the device. The dielectric layer may be formed during a processing step to planarize the electrical device at that step. The vertical interconnect may be diffusion bondable with another opposing interconnect at a low-temperature below the thermal degradation temperature of thermally-sensitive material in the device. The vertical interconnect may have a coefficient of thermal expansion (CTE) that is greater than a CTE of the dielectric layer to facilitate 3D-integration.

Abstract: Sag propensity of a fluid can be determined by applying an oscillatory strain at an amplitude in excess of a linear region and below a yield strain of the drilling fluid. This may include use of medium amplitude oscillatory shear (MAOS), from which an elastic modulus of the fluid is determined. The elastic modulus may be determined over time, from which a time to reach maximum elastic modulus can be determined. The time to reach maximum elastic modulus is then converted or correlated to a drilling fluid sag propensity for the drilling fluid either in absolute terms or in relation to base or comparison fluids. Such an evaluation can be performed using a torsional resonance device in which the oscillatory strain is controllable so as to be maintained relatively constant during the measurement.

Abstract: An electrical device includes an aluminum nitride passivation layer for a mercury cadmium telluride (Hg1-xCdxTe) (MCT) semiconductor layer of the device. The AlN passivation layer may be an un-textured amorphous-to-polycrystalline film that is deposited onto the surface of the MCT in its as-grown state, or overlying the MCT after the MCT surface has been pre-treated or partially passivated, in this way fully passivating the MCT. The AlN passivation layer may have a coefficient of thermal expansion (CTE) that closely matches the CTE of the MCT layer, thereby reducing strain at an interface to the MCT. The AlN passivation layer may be formed with a neutral inherent (residual) stress, provide mechanical rigidity, and chemical resistance to protect the MCT.

Abstract: An electrical device includes a substrate with a compressive layer, a neutral stress buffer layer and a tensile stress compensation layer. The stress buffer layer and the stress compensation layer may each be formed with aluminum nitride using different processing parameters to provide a different intrinsic stress value for each layer. The aluminum nitride tensile layer is configured to counteract stresses from the compressive layer in the device to thereby control an amount of substrate bow in the device. This is useful for protecting fragile materials in the device, such as mercury cadmium telluride. The aluminum nitride stress compensation layer also can compensate for forces, such as due to CTE mismatches, to protect the fragile layer. The device may include temperature-sensitive materials, and the aluminum nitride stress compensation layer or stress buffer layer may be formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

Abstract: Analytical methods and systems applied to sequential event data are disclosed. An exemplary system and method analyzes datasets containing events in a plurality of journeys. The methods and systems described analyze and quantify the relative importance of events and sequences leading to outcomes where the data is complex and interconnected. In some embodiments, a graphical user interface illustrates the quantification of these datasets. In some embodiments, the graphical user interface maps the journey paths to show the relative importance of each journey path. In some embodiments, the maps of journey paths are interactive, allowing selection of paths of interest for detailed analysis. In some embodiments, the methods and systems calculate paths similar to a journey path of interest. An exemplary method and system also provides detailed recommendations for changing events within a sequence to either increase or decrease the likelihood of achieving a selected outcome.

Abstract: An electrical device including a substrate, a dielectric layer supported by the substrate having at least one vertical post disposed within a via hole of the dielectric layer, and at least one electrically conductive vertical interconnect laterally offset from the post. The post is configured to impart a non-tensile state to a region of the electrical device underlying the post. The coefficient of thermal expansion (CTE) of the post may be configured to cooperate with the CTE of the dielectric layer to provide the non-tensile state, such as the dielectric layer having a CTE that is equal to or greater than a CTE of the post. The dielectric layer may have a CTE that is less than the CTE of the electrically conductive vertical interconnect, and may be arranged to provide a buffer to tensile forces imparted by the vertical interconnect.

Abstract: An electrical device includes a substrate, an insulating layer supported by the substrate, and an electrically conductive vertical interconnect disposed in a via hole of the insulating layer. The insulating layer may be configured to provide a coefficient of thermal expansion (CTE) that is equal to or greater than a CTE of the vertical interconnect to thereby impart axial compressive forces at opposite ends of the interconnect. The vertical interconnect may be a hybrid interconnect structure including a low CTE conductor post having a pocket that contains a high CTE conductor contact. At low operating temperatures, the high CTE conductor contact is under tension due to the higher CTE, and thus the high CTE conductor contact relieves strain in the device by void expansion and elongation.

Abstract: A drilling fluid manager creates a multi-dimensional drilling fluid additive model and interpolates changes in a drilling fluid based on a combination of additives. The interpolations are inverted to determine the amount of additives based on measurements of drilling fluid properties. As fluid is returned to the surface, drilling fluid parameters are measured. A difference between the measured fluid parameters and setpoint fluid properties and the inverted interpolations are used to determine the amounts of each additive.

Abstract: A guide can be used to improve inflatability of web material. The guide can be in a system that also includes a supply of a web material and an inflation and sealing system. The web material includes chambers that are in fluid communication with a common channel. The web material in the supply is folded about a longitudinal fold such that lengths of the chambers are folded. The inflation and sealing system is configured to inflate and seal the chambers as the web material is fed from the supply. The guide has a guide mechanism configured to be located between portions of the web material as the web material is being fed from the supply. The guide mechanism is configured to at least partially unfold the longitudinal fold in the web material at a point in the system where the inflation and sealing system is configured to inflate the chambers.

Abstract: An automated packaging station is capable of being used to package objects. The automated packaging station includes a supply of web material, a surface (202), an aperture (206) therein, and a closing system. The automated packaging station is configured to form the web material into a pouch. The aperture (206) is configured such that an object can be inserted therethrough. The automated packaging station is configured to bias open the pouch beneath the surface such that the object inserted through the aperture falls into the pouch. The closing system is configured to close the pouch to form a package around the object in response to the object being inserted through the aperture. The object is capable of being shipped to a recipient in the package.

Abstract: Analytical methods and systems applied to a plurality of input files to understand and explain crucial factors leading to customers jumping, or hopping, from one channel to another channel. The methods and systems described may include receiving a first file associated with a first channel dataset and receiving a second file associated with a second channel dataset. The methods and systems described may include merging the two datasets based on key fields found within the metadata of the two files. In some embodiments, additional statistical metrics and measures may be applied to the merged dataset to both rank the merged events and to display the characteristics of each event within the entire merged dataset.

Abstract: A Cu3Sn electrical interconnect and method of making same in an electrical device, such as for hybrid bond 3D-integration of the electrical device with one or more other electrical devices. The method of forming the Cu3Sn electrical interconnect includes: depositing a Sn layer in the via hole; depositing a Cu layer atop and in contact with the Sn layer; and heating the Sn layer and the Cu layer such that the Sn and Cu layers diffuse together to form a Cu3Sn interconnect in the via hole. During the heating, a diffusion front between the Sn and Cu layers moves in a direction toward the Cu layer as initially deposited, such that any remaining Cu layer or any voids formed during the diffusion are at an upper region of the formed Cu3Sn interconnect in the via hole, thereby allowing such voids or remaining material to be easily removed.

Abstract: A method of forming a pattern of metallic material on a substrate includes providing a plurality of void regions on a surface of the substrate. At a first temperature, a first layer of a first metallic material of a eutectic-forming pair of metallic materials is deposited on the substrate to form a conformal metallic film over the substrate and over the surfaces of the plurality of void regions. The substrate and conformal metallic film are warmed to a second temperature greater than a eutectic-liquid-formation temperature of the eutectic pair of metallic materials. At the second temperature, the second metallic material of the eutectic-forming pair of metallic materials is deposited on the conformal metallic film to initiate a eutectic-liquid-forming reaction, such that the plurality of void regions are filled with a mixture of the first and second metallic materials of the eutectic-forming pair of metallic materials.

Abstract: A through-wafer via substrate includes a substrate having an intermediate layer and a bonding layer formed on a surface of the intermediate layer. A via cavity extends through the bonding layer and into the intermediate layer, and a stress buffer liner is deposited directly on inner sidewalls and a base of the via cavity. An electrically conductive through-wafer via is disposed in the via cavity such that the stress buffer liner is interposed completely between the intermediate layer and the through-wafer via.

Abstract: Aqueous liquid which has been in contact with a subterranean geological formation, especially a hydrocarbon reservoir, is examined in order to detect or measure viscosifying polymer therein, by flowing a sample of the liquid through a constriction thereby causing extensional flow and alignment of any polymer molecules with the flow, and examining the solution for birefringence of aligned polymer molecules. The amount of birefringence is determined from intensity of light which has passed through the solution relative to intensity of the light source.

Abstract: Use of diverse biomass feedstock in a process for the recovery of target C5 and C6 alditols and target glycols via staged hydrogenation and hydrogenolysis processes is disclosed. Particular alditols of interest include, but are not limited to, xylitol and sorbitol. Various embodiments of the present invention synergistically improve overall recovery of target alditols and/or glycols from a mixed C5/C6 sugar stream without needlessly driving total recovery of the individual target alditols and/or glycols. The result is a highly efficient, low complexity process having enhanced production flexibility, reduced waste and greater overall yield than conventional processes directed to alditol or glycol production.

Abstract: Use of diverse biomass feedstock in a process for the recovery of target C5 and C6 alditols and target glycols via staged hydrogenation and hydrogenolysis processes is disclosed. Particular alditols of interest include, but are not limited to, xylitol and sorbitol. Various embodiments of the present invention synergistically improve overall recovery of target alditols and/or glycols from a mixed C5/C6 sugar stream without needlessly driving total recovery of the individual target alditols and/or glycols. The result is a highly efficient, low complexity process having enhanced production flexibility, reduced waste and greater overall yield than conventional processes directed to alditol or glycol production.

Abstract: A method of forming a pattern of metallic material on a substrate includes providing a plurality of void regions on a surface of the substrate. At a first temperature, a first layer of a first metallic material of a eutectic-forming pair of metallic materials is deposited on the substrate to form a conformal metallic film over the substrate and over the surfaces of the plurality of void regions. The substrate and conformal metallic film are warmed to a second temperature greater than a eutectic-liquid-formation temperature of the eutectic pair of metallic materials. At the second temperature, the second metallic material of the eutectic-forming pair of metallic materials is deposited on the conformal metallic film to initiate a eutectic-liquid-forming reaction, such that the plurality of void regions are filled with a mixture of the first and second metallic materials of the eutectic-forming pair of metallic materials.

Abstract: A coreflood experiment may be modeled by generating a three dimensional computer simulation model of a core plug and modeling within the three dimensional computer simulation model one or both of a fluid introduction element or a fluid extraction element of a core holder used in the coreflood experiment. Once generated, the model may be loaded and used when running a simulation to model a heterogeneous distribution of fluid flow proximate one or more faces of the core plug.