Abstract: Ceramic particulate material includes alumina particles, the particles having a specific surface area (SSA) not less than 15 m2/g and not greater than 75 m2/g and a sphericity quantified by at least one of (i) a mean roundness not less than 0.

Abstract: A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.

Abstract: A method of forming a component is disclosed. The method includes: providing a core containing a porous material; infiltrating the core with silicon carbide; and removing the porous material of the core, thereby forming a porous substrate containing silicon carbide.

Abstract: A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.

Abstract: A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer

Abstract: A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer

Abstract: A wafer carrier for supporting a plurality of wafers, including a plurality of slots provided in a cradle, the cradle being formed of silicon carbide and having an oxide layer overlying the silicon carbide.

Abstract: A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a strong acid and then using a pelletized CO2 cleaning process on the acid-washed component. The inventive method has been found to produce a workpiece having a very low level of metallic and particulate contaminants on its surface.

Abstract: A method for cleaning an inorganic surface of a virgin semiconductor processing component by directing a flow of frozen CO2 pellets upon the surface. After cleaning, the component is packaged for transport and installation into a furnace used for processing semiconductor wafers.

Abstract: A method for cleaning a semiconductor processing component is provided. The process calls for directing a stream of cleaning media at a surface of the component, the cleaning media including zirconia. After cleaning with the cleaning media, frozen CO2 (dry ice) pellets may be directed at the surface to further clean the component.

Abstract: A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a strong acid and then using a pelletized CO2 cleaning process on the acid-washed component. The inventive method has been found to produce a workpiece having a very low level of metallic and particulate contaminants on its surface.

Abstract: A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a strong acid and then using a pelletized CO2 cleaning process on the acid-washed component. The inventive method has been found to produce a workpiece having a very low level of metallic and particulate contaminants on its surface.

Abstract: A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a strong acid and then using a pelleted CO2 cleaning process on the acid-washed component. The inventive method has been found to produce a workpiece having a very low level of metallic and particulate contaminants on its surface.

Abstract: A method for estimating the inclusion content of a metal, the method involving three steps. The first step is to section the metal to create an exposed inner surface of the metal. The second step is to measure the reflectance of the exposed inner surface of the metal. The third step is to estimate the inclusion content of the metal from the reflectance. When a physical property of the metal, such as tensile strength, elongation or impact strength, is related to the inclusion content of the metal, then the physical property can be estimated from the reflectance of the exposed inner surface of the metal.