Abstract: In copper backend integrated circuit technology, advanced technology using low-k organic-based interlayer dielectrics have a problem of carbon contamination that dos not occur in circuits using oxide as dielectric. A composite liner layer for the copper lines uses Ti as the bottom layer, which has the property of gettering carbon and other contaminants. The known problem with Ti of reacting with copper to form a high resistivity compound is avoided by adding a layer of TiN, which isolates the Ti and the copper.

Abstract: The present invention relates to a method and apparatus for ensuring uniform and reproducible heating of a deformation-tolerant substrate during low-pressure chemical vapor deposition (CVD) of a metal film on a surface of the substrate. The uniform and reproducible heating of the substrate is achieved in the present invention by positioning the substrate on a beveled surface of a chamfered ring which is located above the heating element in a CVD reactor chamber. The space between heating element, chamfered ring and bottom surface of the substrate define a cavity between the substrate and heating element that ensures that the substrate is heated by radiative means rather than direct contact.

Abstract: A method for forming an open-bottom liner for a conductor in an electronic structure and devices formed are disclosed. In the method, a pre-processed electronic substrate that has a dielectric layer on top is first provided. Via openings are then formed in a dielectric layer to expose an underlying conductive layer. The electronic substrate is then positioned in a cold-wall, low pressure chemical vapor deposition chamber, while the substrate is heated to a temperature of at least 350° C. A precursor gas is then flowed into the CVD chamber to a partial pressure of not higher than 10 mTorr, and metal is deposited from the precursor gas onto sidewalls of the via openings while bottoms of the via openings are substantially uncovered by the metal. The present invention method may be further enhanced by, optionally, modifications of a I-PVD technique or a seed layer deposition technique.

Abstract: A cooling structure and a reinforcing structure are described for use with a radio-frequency coil in an ionized physical vapor deposition apparatus. The cooling structure includes a portion for carrying coolant and is proximate to the RF coil along the outer circumference thereof. The cooling structure is shaped relative to the RF coil so that thermal expansion of the RF coil brings the RF coil into close contact with the cooling structure, thereby facilitating heat transfer from the RF coil to the coolant. The reinforcing structure is similarly shaped, and may be integrated with the cooling structure. In addition, the RF coil or cooling/reinforcing structure may be mounted to the wall of the process chamber with telescoping mounting posts, which permit the RF coil to maintain its shape while undergoing thermal expansion. The parasitic inductance of the RF coil leads is reduced by arranging those leads coaxially, thereby minimizing power losses in the RF coil.

Abstract: Improvements are described for a wafer clamp ring used in an IPVD apparatus to provide cooling for the wafer clamp ring, to protect the wafer clamp ring from ion bombardment, and to prevent damage to the wafer. The wafer clamp ring is placed on a cooling fixture when not required for a deposition process. The fixture is annular in shape and in close thermal contact with a circulating coolant and is thereby cooled below ambient temperature. The cooling line and the cooling fixture are fixed relative to the IPVD device, so that problems associated with flexible cooling lines are avoided. An annular grounded shield may be provided between the plasma and clamp ring to protect the clamp ring against ion bombardment during the deposition process. The wafer clamp ring may have a portion which overhangs the wafer during a deposition process, and which has a ridge portion extending downwards therefrom and tapering to a knife edge.