Abstract: A heat resistant positive-working photosensitive composition that has a polybenzoxazole precursor bearing acid labile functional groups, a photoacid generator, a photosensitizer, and a solvent. The polybenzoxazole precursor bearing acid labile functional groups, has the structure: ##STR1## wherein k.sub.1 is an integer of 1 or 2, k.sub.2 is an interger of 0 or 1, and the sum of k.sub.1 and k.sub.2 is 2; Ar.sub.1 is a tetravalent aromatic, aliphatic, or heterocyclic group, or mixtures thereof; Ar.sub.2 is a divalent aromatic, aliphatic, or heterocyclic group or siloxane group; D is a monovalent acid labile group; and n is an integer from 20 to 200. A portion of Ar.sub.1 can be a divalent aromatic, aliphatic, or heterocyclic diamine moiety such that the fraction of diamine compound is 0-60 mole percent and the sum of diamine and diamino dihydroxy compound is 100%.

Abstract: A photosensitive compound comprising at least one o-quinonediazide sulfonic acid ester of a phenolic compound, said esters selected from the group consisting of formula (II): ##STR1## wherein the photosensitive compound is used in a radiation sensitive composition and a process for forming a positive patterned image.

Abstract: The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in-situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, coating a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.

Abstract: The present invention is directed to a thermally curable polymer composition comprising a hydroxyl-containing polymer and a polyfunctional isocyanate as a crosslinking agent, which is particularly useful in photolithographic coating of substrates. The thermally curable polymer composition may be dissolved in a solvent and used as an undercoat layer in deep UV lithography. Furthermore, the present invention further relates to a process for using the photolithographic coated substrate for the production of relief structures.

Abstract: A photosensitive compound comprising at least one o-quinonediazide sulfonic acid ester of a phenolic compound, said esters selected from the group consisting of formula (II): ##STR1## wherein the photosensitive compound is used in a radiation sensitive composition and a process for forming a positive patterned image.

Abstract: The present invention relates to a process for preparing a radiation-sensitive composition, comprising the steps of (1) passing a solution of a crude polymer comprising a mixture of polymer chains having different molecular weights through a porous polymeric media having a predetermined molecular weight cut-off (MWCO) value, thereby separating the crude polymeric mixture into a first fraction comprising polymer chains having molecular weights above the MWCO value and a second fraction comprising polymer chains having molecular weights below the MWCO value; and (2) adding at least one fraction produced in the first step to at least one radiation-sensitive compound and at least one solvent to produce a radiation-sensitive composition.

Abstract: A high thermal alkali-soluble novolak binder resin, comprising the addition-condensation reaction product of a phenolic mixture with at least one aldehyde source, the feedstock of the phenolic mixture for the reaction comprising:(1) about 25 to about 40 weight percent of the phenolic mixture being a monomer selected from meta-cresol 2,5-xylenol or the combination thereof;(2) about 50 to about 70 weight percent of the phenolic mixture being para-cresol; and(3) about 3 to about 20 weight percent of the phenolic mixture being acetamidophenol; all percentages based on the weight of total phenol monomer feedstock.The invention is also directed to a positive working photoresist made from the composition.

Abstract: A process for making polyimide-polyamic ester copolymer composition comprisingreacting at least one diamine, a pyromellitic diacid diester compound; at least one other tetracarboxylic diacid diester compound and a selected phosphoramide in the presence of a base catalyst to form a polyimide-polyamic acid ester copolymer.

Abstract: A process for making polyimide composition comprising reacting at least one diamine, at least one tetracarboxylic diacid diester, selected phosphoramide and at least one base catalyst to form at least one polyimide compound, said reaction carried out at a temperature from about 20.degree. C. to about 60.degree. C. and wherein the molar ratio of diamine:tetracarboxylic diacid diester:phosphoramide:base catalyst is in the range of 0.8-1.2:1:2.5-4.0:2.5-4.0.

Abstract: A process for producing a polyimide composition by reacting at least one polyamic acid or at least one polyamic ester or a mixture of at least one polyamic acid and at least one polyamic ester with a selected phosphoramide in the presence of at least one base catalyst to from a polyimide composition.

Abstract: A photosensitive compound comprising at least one o-quinonediazide sulfonic acid ester of a phenolic compound, said esters selected from the group consisting of formulae (IB) and (IIB): ##STR1## wherein the variables are as defined in the description.

Abstract: A photosensitive compound comprising at least one o-quinonediazide sulfonic acid ester of a phenolic compound, said esters selected from the group consisting of formulae (IB) and (IIB): ##STR1## wherein the photosensitive compound is used in a radiation sensitive composition and a process for forming a positive patterned image.

Abstract: A photosensitive compound comprising at least one o-quinonediazide sulfonic acid ester of a phenolic compound, said esters selected from the group consisting of formulae (IB) and (IIB): ##STR1## wherein the photosensitive compound is used in a positive photoresist composition and process for forming patterned image. Further the invention is drawn to a positive photoresist composition comprising an alkali-soluble resin and quinone diazide sulfonic acid triesters and diesters characterized by their HPLC peak areas.

Abstract: Block phenolic oligomers of the formula (I): ##STR1## These may be reacted alone or with selected phenolic monomers during or after the formation of a phenolic novolak resin thereby said resin having at least one unit of formula (II): ##STR2##

Abstract: A block copolymer novolak resin composition comprising at least one unit of the reaction product of an alkali-soluble phenolic polymer and a reactive ortho, ortho bonded oligomer having the formula: ##STR1## wherein x is from 2 to 7; wherein R is selected from hydrogen a lower alkyl group or lower alkoxy group having 1-4 carbon atoms and a halogen group; and Y.sub.1 is either a hydroxyl group; an alkoxy group or a halogen group; and Y.sub.2 is hydrogen, alkyl, alkoxy, halogen, hydroxyl, --CH.sub.2 OH, --CH.sub.2 -- halogen, or --CH.sub.2 -alkoxy group.

Abstract: A block copolymer novolak resin composition comprising at least one unit of the reaction product of an alkali-soluble phenolic polymer and a reactive ortho, ortho bonded oligomer having the formula: ##STR1## wherein x is from 2 to 7; wherein R is selected from hydrogen a lower alkyl group or lower alkoxy group having 1-4 carbon atoms and a halogen group; and Y.sub.1 is either a hydroxyl group; an alkoxy group or a halogen group; and Y.sub.2 is hydrogen, alkyl, alkoxy, halogen, hydroxyl, --CH.sub.2 OH, --CH.sub.2 -- halogen, or --CH.sub.2 --alkoxy group.

Abstract: Block phenolic oligomers of the formula (I): ##STR1## These may be reacted alone or with selected phenolic monomers during or after the formation of a phenolic novolak resin thereby said resin having at least one unit of formula (II): ##STR2##

Abstract: Block phenolic oligomers of the formula (I): ##STR1## These may be reacted alone or with selected phenolic monomers during or after the formation of a phenolic novolak resin thereby said resin having at least one unit of formula (II): ##STR2##

Abstract: A block copolymer novolak resin composition comprising at least one unit of the reaction product of an alkali-soluble phenolic moiety having at least two phenolic nuclei and at least two unsubstituted positions ortho and para to the hydroxyls in the moiety and a reactive ortho, ortho bonded oligomer having the formula: ##STR1## wherein x is from 2 to 7; wherein R is selected from hydrogen a lower alkyl group or lower alkoxy group having 1-4 carbon atoms and a halogen group; and Y.sub.1 is either a hydroxyl group; an alkoxy group or a halogen group; and Y.sub.2 is hydrogen, alkyl, alkoxy, halogen, hydroxyl, --CH.sub.2 OH, --CH.sub.2 -- halogen, or --CH.sub.2 -alkoxy group.

Abstract: Described herein is a developer for alkali developable photoresists which comprises the addition of a selected fluorinated amphoteric surfactant to an aqueous basic solution.