Patents by Inventor Andrew J. Kellock
Andrew J. Kellock has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10971576Abstract: An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.Type: GrantFiled: November 20, 2017Date of Patent: April 6, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
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Publication number: 20180076275Abstract: An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.Type: ApplicationFiled: November 20, 2017Publication date: March 15, 2018Inventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
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Patent number: 9865673Abstract: An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.Type: GrantFiled: March 24, 2015Date of Patent: January 9, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
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Patent number: 9812638Abstract: A device has a M8XY6 layer in between a first conductive layer on the top and a second conductive layer on the bottom, wherein (i) M includes at least one element selected from the following: Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element. Another device has MaXbYc material contacted on opposite sides by respective layers of conductive material, wherein: (i) M includes at least one element selected from the following: Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element, and a is in the range of 48-60 atomic percent, b is in the range of 4-10 atomic percent, c is in the range of 30-45 atomic percent, and a+b+c is at least 90 atomic percent.Type: GrantFiled: March 19, 2010Date of Patent: November 7, 2017Assignee: GLOBALFOUNDRIES Inc.Inventors: Donald S Bethune, Kailash Gopalakrishnan, Andrew J Kellock, Rohit S Shenoy
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Patent number: 9653532Abstract: An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.Type: GrantFiled: July 30, 2016Date of Patent: May 16, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
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Publication number: 20160336387Abstract: An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.Type: ApplicationFiled: July 30, 2016Publication date: November 17, 2016Inventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
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Publication number: 20160284451Abstract: An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.Type: ApplicationFiled: March 24, 2015Publication date: September 29, 2016Inventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
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Publication number: 20160284788Abstract: An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.Type: ApplicationFiled: June 19, 2015Publication date: September 29, 2016Inventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
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Patent number: 9437668Abstract: An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.Type: GrantFiled: June 19, 2015Date of Patent: September 6, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
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Patent number: 8830725Abstract: A crystalline semiconductor Schottky barrier-like diode sandwiched between two conducting electrodes is in series with a memory element, a word line and a bit line, wherein the setup provides voltage margins greater than 1V and current densities greater than 5×106 A/cm2. This Schottky barrier-like diode can be fabricated under conditions compatible with low-temperature BEOL semiconductor processing, can supply high currents at low voltages, exhibits high on-off ratios, and enables large memory arrays.Type: GrantFiled: August 15, 2011Date of Patent: September 9, 2014Assignee: International Business Machines CorporationInventors: Donald S Bethune, Kailash Gopalakrishnan, Andrew J Kellock, Rohit S Shenoy, Kumar R Virwani
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Patent number: 8404589Abstract: A method for forming a silicide contact includes depositing a metal layer on silicon such that the metal layer intermixes with the silicon to form an intermixed region on the silicon; removing an unintermixed portion of the metal layer from the intermixed region; and annealing the intermixed region to form a silicide contact on the silicon. A semiconductor device comprising a silicide contact located over a silicon layer of the semiconductor device, the silicide contact comprising nickel (Ni) and silicon (Si) and having Ni amount equivalent to a thickness of about 21 angstroms or less.Type: GrantFiled: April 6, 2010Date of Patent: March 26, 2013Assignees: International Business Machines Corporation, Globalfoundries Inc.Inventors: Andrew J. Kellock, Christian Lavoie, Ahmet Ozcan, Stephen Rossnagel, Bin Yang, Zhen Zhang, Yu Zhu, Stefan Zollner
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Publication number: 20130044532Abstract: A crystalline semiconductor Schottky barrier-like diode sandwiched between two conducting electrodes is in series with a memory element, a word line and a bit line, wherein the setup provides voltage margins greater than 1V and current densities greater than 5×106 A/cm2. This Schottky barrier-like diode can be fabricated under conditions compatible with low-temperature BEOL semiconductor processing, can supply high currents at low voltages, exhibits high on-off ratios, and enables large memory arrays.Type: ApplicationFiled: August 15, 2011Publication date: February 21, 2013Applicant: International Business Machines CorporationInventors: Donald S. Bethune, Kailash Gopalakrishnan, Andrew J. Kellock, Rohit S. Shenoy, Kumar R. Virwani
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Publication number: 20120301706Abstract: A method of depositing a SiNxCy liner on a porous low thermal conductivity (low-k) substrate by plasma-enhanced atomic layer deposition (PE-ALD), which includes forming a SiNxCy liner on a surface of a low-k substrate having pores on a surface thereon, in which the low-k substrate is repeatedly exposed to a aminosilane-based precursor and a plasma selected from nitrogen, hydrogen, oxygen, helium, and combinations thereof until a thickness of the liner is obtained, and wherein the liner is prevented from penetrating inside the pores of a surface of the substrate. A porous low thermal conductivity substrate having a SiNxCy liner formed thereon by the method is also disclosed.Type: ApplicationFiled: August 7, 2012Publication date: November 29, 2012Applicant: International Business Machines CorporationInventors: Andrew J. Kellock, Hyungjun Kim, Dae-Gyu Park, Satyanarayana V. Nitta, Sampath Purushothaman, Stephen Rossnagel, Oscar Van Der Straten
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Publication number: 20110241213Abstract: A method for forming a silicide contact includes depositing a metal layer on silicon such that the metal layer intermixes with the silicon to form an intermixed region on the silicon; removing an unintermixed portion of the metal layer from the intermixed region; and annealing the intermixed region to form a silicide contact on the silicon. A semiconductor device comprising a silicide contact located over a silicon layer of the semiconductor device, the silicide contact comprising nickel (Ni) and silicon (Si) and having Ni amount equivalent to a thickness of about 21 angstroms or less.Type: ApplicationFiled: April 6, 2010Publication date: October 6, 2011Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBAL FOUNDRIES INC.Inventors: Andrew J. Kellock, Christian Lavoie, Ahmet Ozcan, Stephen Rossnagel, Bin Yang, Zhen Zhang, Yu Zhu, Stefan Zollner
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Publication number: 20110227023Abstract: A device is disclosed having a M8XY6 layer sandwiched in between a first conductive layer on the top and a second conductive layer on the bottom, wherein (i) M includes at least one element selected from the group consisting of Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element. Also disclosed is a device comprising: an MaXbYc material contacted on opposite sides by respective layers of conductive material, wherein: (i) M includes at least one element selected from the group consisting of Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element, and wherein a is in the range of 48-60 atomic percent, b is in the range of 4-10 atomic percent, c is in the range of 30-45 atomic percent, and a+b+c is at least 90 atomic percent.Type: ApplicationFiled: March 19, 2010Publication date: September 22, 2011Applicant: International Business Machines CorporationInventors: Donald S. Bethune, Kailash Gopalakrishnan, Andrew J. Kellock, Rohit S. Shenoy
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Patent number: 7918984Abstract: A method of electrodepositing germanium compound materials on an exposed region of a substrate structure, which includes forming a plating solution by dissolving at least one germanium salt and at least one salt containing an element other than germanium in water; obtaining a substrate with a clean surface; immersing the substrate in the solution; and electroplating germanium compound materials on the substrate by applying an electrical potential between the substrate and an anode in the plating solution, in which the substrate is included in a semiconductor or phase change device.Type: GrantFiled: September 17, 2007Date of Patent: April 5, 2011Assignee: International Business Machines CorporationInventors: Qiang Huang, Andrew J. Kellock, Xiaoyan Shao, Venkatram Venkatasamy
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Publication number: 20100213073Abstract: A bath for electroplating a I-III-VI compound comprising: water; a copper containing precursor dissolved in said water; a selenium containing precursor dissolved in said water; and at least one member selected from the group consisting of an indium containing precursor dissolved in said water, a gallium containing precursor dissolved in said water and mixtures thereof, and at least one member selected from the group consisting of sulfur-containing organic compound dissolved in said water wherein one or more sulfur atoms directly bond with at least one carbon atom, a phosphorus-containing organic compound dissolved in said water wherein one or more phosphorus atoms directly bond with at least one carbon atom and mixtures thereof is provided along with its use to fabricate thin films, solar devices and tuned thin films.Type: ApplicationFiled: February 23, 2009Publication date: August 26, 2010Applicant: International Business Machines CorporationInventors: Qiang HUANG, Xiaoyan Shao, Andrew J. Kellock
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Publication number: 20100055442Abstract: A method of depositing a SiNxCy liner on a porous low thermal conductivity (low-k) substrate by plasma-enhanced atomic layer deposition (PE-ALD), which includes forming a SiNxCy liner on a surface of a low-k substrate having pores on a surface thereon, in which the low-k substrate is repeatedly exposed to a aminosilane-based precursor and a plasma selected from nitrogen, hydrogen, oxygen, helium, and combinations thereof until a thickness of the liner is obtained, and wherein the liner is prevented from penetrating inside the pores of a surface of the substrate. A porous low thermal conductivity substrate having a SiNxCy liner formed thereon by the method is also disclosed.Type: ApplicationFiled: September 3, 2008Publication date: March 4, 2010Applicant: International Business Machines CorporationInventors: Andrew J. Kellock, Hyungjun Kim, Dae-Gyu Park, Satyanarayana V. Nitta, Sampath Purushothaman, Stephen Rossnagel, Oscar Van Der Straten
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Patent number: 7566483Abstract: Modified strain regions are created in correlation to strain reactive structures that are subjected to a predetermined dimensional precision adjustment. The modified strain regions are created by impacting incident particles into exposed regions of the strain reactive structures. The irradiation by the incident particles creates a predetermined material disruption and consequently a change in strain energy. The strain energy, and the associated dimensional adjustment is dependent on the irradiation process and the sum properties of the modified strain regions and the strain reactive structure.Type: GrantFiled: June 4, 2004Date of Patent: July 28, 2009Assignee: Hitachi Global Storage Technologies Netherlands, B.V.Inventors: John Edward Eric Baglin, Richard D. Bunch, Linden James Crawforth, Eric W. Flint, Andrew J. Kellock, Timothy Clark Reiley
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Publication number: 20090071836Abstract: A method of electrodepositing germanium compound materials on an exposed region of a substrate structure, which includes forming a plating solution by dissolving at least one germanium salt and at least one salt containing an element other than germanium in water; obtaining a substrate with a clean surface; immersing the substrate in the solution; and electroplating germanium compound materials on the substrate by applying an electrical potential between the substrate and an anode in the plating solution, in which the substrate is included in a semiconductor or phase change device.Type: ApplicationFiled: September 17, 2007Publication date: March 19, 2009Applicant: International Business Machines CorporationInventors: Qiang Huang, Andrew J. Kellock, Xiaoyan Shao, Venkatram Venkatasamy