Patents by Inventor Andrew John McKerrow

Andrew John McKerrow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LOW-K DAMAGE REPAIR AND PORE SEALING AGENTS WITH PHOTOSENSITIVE END GROUPS
    Publication number: 20160111288
    Abstract: Methods of repairing damaged low-k dielectric films using UV-activated photosensitive organic compounds are described herein. Methods of sealing pores by exposing porous dielectric films to UV-activated large photosensitive organic compounds are also described. Methods also include mechanically reinforcing dielectric films using photosensitive organic compounds activated by UV radiation. Compounds include at least one photosensitive end group, such as an unsaturated bond or group with high ring strain.
    Type: Application
    Filed: October 17, 2014
    Publication date: April 21, 2016
    Inventors: George Andrew Antonelli, Andrew John McKerrow
  • Method to increase mechanical fracture robustness of porous low k dielectric materials
    Patent number: 7342315
    Abstract: The present invention provides an insulating layer 100 for an integrated circuit 110 comprising a porous silicon-based dielectric layer 120 located over a substrate 130. The insulating layer comprises a densified layer 140 comprising an uppermost portion 142 of the porous silicon-based dielectric layer.
    Type: Grant
    Filed: April 25, 2005
    Date of Patent: March 11, 2008
    Assignee: Texas Instruments Incorporated
    Inventors: Ting Yiu Tsui, Andrew John McKerrow, Jeannette M. Jacques
  • Method for fabricating semiconductor devices that uses efficient plasmas
    Patent number: 6806103
    Abstract: The present invention provides, in one embodiment, process of treating a target semiconductor surface. The process includes exposing a test surface to a plasma protocol (110), and measuring chemical changes in discrete locations of the test surface (120). The process further includes preparing a target surface by exposing the target surface to the plasma protocol (140) when a uniformity of the chemical changes are within a performance criterion of the plasma protocol (130). Other embodiments advantageously incorporate this process into methods for making semiconductor devices and integrated circuits.
    Type: Grant
    Filed: June 10, 2003
    Date of Patent: October 19, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Ting Tsui, Andrew John McKerrow, Yuji Richard Kuan