Abstract: A solidifying prepolymeric implant composition comprising a biocompatible prepolymer and an optional filler. One such implant composition is a polyurethane implant composition comprising an isocyanate, such as hydroxymethylenediisocyanate (HMDI) and an alcohol, such as polycaprolactonediol (PCL diol). The compositions of the invention are useful for improving bone structure in patients by applying the solidifying implant composition to bone, reinforcing bone structure, improving load bearing capacity and/or aiding healing of microfractures.

Abstract: Systems, methods, and apparatuses are provided for self-contained nucleic acid preparation, amplification, and analysis.

Abstract: A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, an optionally relaxed semiconductor layer comprising silicon, germanium, or silicon germanium, an optional polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer.

Abstract: A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided. Each of the multiple semiconductor-on-insulator composite structures prepared in parallel comprises a charge trapping layer (CTL).

Abstract: A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided. Each of the multiple semiconductor-on-insulator composite structures prepared in parallel comprises a charge trapping layer (CTL).

Abstract: Electrowetting-actuated optical shutters based on total internal reflection or beam steering. An electrowetting cell contains a conducting liquid and a non-conducting liquid configured to form a liquid-liquid interface extending to the inner walls of the cell. A beam of light is directed to the liquid-liquid interface at an angle near the total internal reflection angle of the interface. Voltage changes the shape of the liquid-liquid interface, without separating it from the inner walls of the cell. Thus, when depending on the voltage applied, the beam is either transmitted in part or substantially totally internal reflected.

Abstract: A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, an optionally relaxed semiconductor layer comprising silicon, germanium, or silicon germanium, an optional polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer.

Abstract: A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.

Abstract: A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, an optionally relaxed semiconductor layer comprising silicon, germanium, or silicon germanium, an optional polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer.

Abstract: Electrowetting-actuated optical shutters based on total internal reflection or beam steering. An electrowetting cell contains a conducting liquid and a non-conducting liquid configured to form a liquid-liquid interface extending to the inner walls of the cell. A beam of light is directed to the liquid-liquid interface at an angle near the total internal reflection angle of the interface. Voltage changes the shape of the liquid-liquid interface, without separating it from the inner walls of the cell. Thus, when depending on the voltage applied, the beam is either transmitted in part or substantially totally internal reflected.

Abstract: A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided. Each of the multiple semiconductor-on-insulator composite structures prepared in parallel comprises a charge trapping layer (CTL).

Abstract: A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided. Each of the multiple semiconductor-on-insulator composite structures prepared in parallel includes a charge trapping layer (CTL).

Abstract: Electrowetting-actuated optical shutters based on total internal reflection or beam steering. An electrowetting cell contains a conducting liquid and a non-conducting liquid configured to form a liquid-liquid interface extending to the inner walls of the cell. A beam of light is directed to the liquid-liquid interface at an angle near the total internal reflection angle of the interface. Voltage changes the shape of the liquid-liquid interface, without separating it from the inner walls of the cell. Thus, when depending on the voltage applied, the beam is either transmitted in part or substantially totally internal reflected.

Abstract: A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.

Abstract: A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, an optionally relaxed semiconductor layer comprising silicon, germanium, or silicon germanium, an optional polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer.

Abstract: A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm and the front surface of the single crystal semiconductor handle substrate has a surface roughness of at least about 0.1 micrometers as measured according to the root mean square method over a surface area of at least 30 micrometers by 30 micrometers. The composite structure further comprises a charge trapping layer in contact with the front surface, the charge trapping layer comprising poly crystalline silicon, the poly crystalline silicon comprising grains having a plurality of crystal orientations; a dielectric layer in contact with the charge trapping layer; and a single crystal semiconductor device layer in contact with the dielectric layer.

Abstract: A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.

Abstract: A method of preparing a single crystal semiconductor handle wafer in the manufacture of a semiconductor-on-insulator device is provided. The single crystal semiconductor handle wafer is prepared to comprise a charge trapping layer, which is oxidized. The buried oxide layer in the resulting semiconductor-on-insulator device comprises an oxidized portion of the charge trapping layer and an oxidized portion of the single crystal semiconductor device layer.

Abstract: A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, an optionally relaxed semiconductor layer comprising silicon, germanium, or silicon germanium, an optional polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer.

Abstract: A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided. Each of the multiple semiconductor-on-insulator composite structures prepared in parallel comprises a charge trapping layer (CTL).